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Author: curt richter

Displaying records 151 to 160 of 170 records.
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151. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30331

152. Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate Dielectrics
Published: 3/1/2000
Authors: Eric M. Vogel, W. K. Henson, Curt A Richter, John S Suehle
Abstract: A systematic study of the uncertainties, sensitivity and limitations of the conductance technique for extracting the interface state density of tunneling dielectrics is presented. The methodology required to extract device parameters and interface s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28966

153. Gate Dielectric Metrology Review: Project FEPZ001 Year 2 Report
Published: 1/1/2000
Authors: Dennis Maher, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30332

154. Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics
Published: 12/2/1999
Authors: Curt A Richter, Nhan V Nguyen, G A Alers, X Guo, Xiaorui Wang, T P Ma, T Tamagawa
Abstract: Extended abstract on Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics. Opening paragraph of abstract: There is tremendous interest in high dielectric constant (high-k) films to use as alternates to S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30167

155. Spectroscopic Ellipsometry of Ta^d2^0^d5^ On Si, in Ultrathin SiO^d2^ and High-K Materials for ULSI Gate Dielectrics, edited by H. R. Huff, C. A. Richter, M. L. Green, G. Lucovsky, and T. Hattori
Published: 9/1/1999
Authors: Curt A Richter, Nhan V Nguyen, G A Alers
Abstract: In this paper, we present the results of spectroscopic ellipsometry (SE) studies of Ta^d2^0^d5^ films on Si. Based on these results, we have experimentally determined an effective method for analyzing SE measurements of Ta^d2^0^d5^. A set of CVD-gro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10687

156. Ultrathin SiO^d2^ and High-K Materials for ULSI Gate Dielectrics
Published: 9/1/1999
Authors: H. R. Huff, Curt A Richter, M. L. Green, G. Lucovsky, T. Hattori
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=7328

157. preface to Ultrathin SiO^d2^ and High-K Materials for ULSI Gate Dielectrics, edited by H. R. Huff, C. A. Richter, M. L. Green, G. Lucovsky, and T. Hattori
Published: 9/1/1999
Authors: H. R. Huff, Curt A Richter, M. L. Green, G. Lucovsky, T. Hattori
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=20549

158. The Future of Gate Dielectrics Considered
Published: 7/1/1999
Author: Curt A Richter
Abstract: Symposium R, Ultrathin SiO^d2^ and High-K Materials for ULSI Gate Dielectrics, provided a large (20 invited speakers and more than 100 total presentations) and exciting overviews of many possible solutions for technologically critical issues associat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3728

159. Preface to Materials Research Society 1999 Proceedings
Published: 4/5/1999
Authors: H. R. Huff, Curt A Richter, M. L. Green, G. Lucovsky
Abstract: This Materials research society Proceedings contains 81 papers presented at the Ultrathin SiO^d2^ and High-K Materials for gate Dielectrics Symposium, held April 5-9, 1999, in San Francisco. The symposium was truly international with 34 of the 81 pub ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30164

160. Neutron Reflectometry, X-Ray Reflectometry, and Spectroscopic Ellipsometry Characterization of Thin SiO^d2^ on Si
Published: 10/12/1998
Authors: Joseph A. Dura, Curt A Richter, Charles F. Majkrzak, Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16777



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