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Author: curt richter

Displaying records 141 to 150 of 166 records.
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141. Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
Published: 3/1/2001
Authors: W Chism, Alain C. Diebold, J Canterbury, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8224

142. Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films
Published: 2/6/2001
Authors: Alain C. Diebold, J Canterbury, W Chism, Curt A Richter, Nhan V Nguyen, James R. Ehrstein, C E. Weintraub
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26438

143. Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters
Published: 2/6/2001
Authors: Michael W Cresswell, N. Arora, Richard A Allen, Christine E. Murabito, Curt A Richter, Ashwani Kumar Gupta, Loren W. Linholm, D. Pachura, P. Bendix
Abstract: This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different draw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=21630

144. Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: a Fundamental Difference
Published: 2/1/2001
Authors: Curt A Richter, Nhan V Nguyen, Evgeni Gusev, T H Zabel, G A Alers
Abstract: We will describe a fundamental difference between the interpretation of optical and electrical measurements of gate dielectric thickness. This difference has major ramifications on the characterization of, and metrology for, advanced, alternate gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2338

145. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr, Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16

146. Effects of High Temperature Annealing on the Dielectric Function of Ta^d2^O^d5^ Films Observed by Spectroscopic Ellipsometry
Published: 11/6/2000
Authors: Nhan V Nguyen, Curt A Richter, Yong J. Cho, G A Alers, L. A. Stirling
Abstract: Post-deposition annealing of high-k dielectric Ta^d2^O^d5^ films to eliminate contaminations can adversely cause the films to crystallize, which can be detrimental to their CMOS device performances. In this letter, we will show that spectroscopic el ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25317

147. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30331

148. Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate Dielectrics
Published: 3/1/2000
Authors: Eric M. Vogel, W. K. Henson, Curt A Richter, John S Suehle
Abstract: A systematic study of the uncertainties, sensitivity and limitations of the conductance technique for extracting the interface state density of tunneling dielectrics is presented. The methodology required to extract device parameters and interface s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28966

149. Gate Dielectric Metrology Review: Project FEPZ001 Year 2 Report
Published: 1/1/2000
Authors: Dennis Maher, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30332

150. Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics
Published: 12/2/1999
Authors: Curt A Richter, Nhan V Nguyen, G A Alers, X Guo, Xiaorui Wang, T P Ma, T Tamagawa
Abstract: Extended abstract on Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics. Opening paragraph of abstract: There is tremendous interest in high dielectric constant (high-k) films to use as alternates to S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30167



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