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Author: curt richter

Displaying records 141 to 150 of 170 records.
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141. Molecular Electronic Test Structures
Published: 3/1/2002
Authors: Curt A Richter, John S Suehle, Monica D Edelstein, Oleg A Kirillov, Roger D van Zee

142. Spectroscopic Ellipsometry Characterization of High-K Dielectric HfO^d2^ Thin Films and the High-Temperature Annealing on Their Optical Properties
Published: 2/18/2002
Authors: Yong J. Cho, Nhan V Nguyen, Curt A Richter, James R. Ehrstein, Byoung H. Lee, Jack C. Lee

143. Differences Between Quantum-Mechanical Capacitance-Voltage Simulators
Published: 9/7/2001
Authors: Curt A Richter, Eric M. Vogel, Angela Hodge, Allen R Hefner Jr

144. Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices
Published: 5/13/2001
Authors: John S Suehle, Eric M. Vogel, Monica D Edelstein, Curt A Richter, Nhan V Nguyen, Igor Levin, Debra L Kaiser, Hanchang F Wu, J B Bernstein
Abstract: As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current a ...

145. Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
Published: 3/1/2001
Authors: W Chism, Alain C. Diebold, J Canterbury, Curt A Richter

146. Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films
Published: 2/6/2001
Authors: Alain C. Diebold, J Canterbury, W Chism, Curt A Richter, Nhan V Nguyen, James R. Ehrstein, C E. Weintraub

147. Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters
Published: 2/6/2001
Authors: Michael W Cresswell, N. Arora, Richard A Allen, Christine E. Murabito, Curt A Richter, Ashwani Kumar Gupta, Loren W. Linholm, D. Pachura, P. Bendix
Abstract: This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different draw ...

148. Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: a Fundamental Difference
Published: 2/1/2001
Authors: Curt A Richter, Nhan V Nguyen, Evgeni Gusev, T H Zabel, G A Alers
Abstract: We will describe a fundamental difference between the interpretation of optical and electrical measurements of gate dielectric thickness. This difference has major ramifications on the characterization of, and metrology for, advanced, alternate gate ...

149. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr, Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...

150. Effects of High Temperature Annealing on the Dielectric Function of Ta^d2^O^d5^ Films Observed by Spectroscopic Ellipsometry
Published: 11/6/2000
Authors: Nhan V Nguyen, Curt A Richter, Yong J. Cho, G A Alers, L. A. Stirling
Abstract: Post-deposition annealing of high-k dielectric Ta^d2^O^d5^ films to eliminate contaminations can adversely cause the films to crystallize, which can be detrimental to their CMOS device performances. In this letter, we will show that spectroscopic el ...

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