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Author: curt richter

Displaying records 141 to 150 of 171 records.
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141. A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published: 3/10/2003
Authors: Eric M. Vogel, Curt A Richter, Brian G. Rennex
Abstract: We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17822

142. Molecular Electronic Test Structures
Published: 3/1/2002
Authors: Curt A Richter, John S Suehle, Monica D Edelstein, Oleg A Kirillov, Roger D van Zee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30756

143. Spectroscopic Ellipsometry Characterization of High-K Dielectric HfO^d2^ Thin Films and the High-Temperature Annealing on Their Optical Properties
Published: 2/18/2002
Authors: Yong J. Cho, Nhan V Nguyen, Curt A Richter, James R. Ehrstein, Byoung H. Lee, Jack C. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8355

144. Differences Between Quantum-Mechanical Capacitance-Voltage Simulators
Published: 9/7/2001
Authors: Curt A Richter, Eric M. Vogel, Angela Hodge, Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13625

145. Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices
Published: 5/13/2001
Authors: John S Suehle, Eric M. Vogel, Monica D Edelstein, Curt A Richter, Nhan V Nguyen, Igor Levin, Debra L Kaiser, Hanchang F Wu, J B Bernstein
Abstract: As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30236

146. Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
Published: 3/1/2001
Authors: W Chism, Alain C. Diebold, J Canterbury, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8224

147. Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films
Published: 2/6/2001
Authors: Alain C. Diebold, J Canterbury, W Chism, Curt A Richter, Nhan V Nguyen, James R. Ehrstein, C E. Weintraub
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26438

148. Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters
Published: 2/6/2001
Authors: Michael W Cresswell, N. Arora, Richard A Allen, Christine E. Murabito, Curt A Richter, Ashwani Kumar Gupta, Loren W. Linholm, D. Pachura, P. Bendix
Abstract: This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different draw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=21630

149. Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: a Fundamental Difference
Published: 2/1/2001
Authors: Curt A Richter, Nhan V Nguyen, Evgeni Gusev, T H Zabel, G A Alers
Abstract: We will describe a fundamental difference between the interpretation of optical and electrical measurements of gate dielectric thickness. This difference has major ramifications on the characterization of, and metrology for, advanced, alternate gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2338

150. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr, Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16



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