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Author: michael postek

Displaying records 181 to 190 of 225 records.
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181. A Monte Carlo Model for SEM Linewidth Metrology
Published: 12/31/1994
Authors: J R. Lowney, Michael T Postek, Andras Vladar
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1721

182. Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology
Published: 12/31/1994
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, E Marx, Robert D. Larrabee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28049

183. National Institute of Standards and Technology (NIST) J93 Project Interim Report
Published: 12/22/1994
Authors: Michael T Postek, James Edward Potzick, J Schneir, T Mcwaid, Robert D. Larrabee
Abstract: Unavailable.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820705

184. Parameters Characterizing a Critical Dimension Measurement
Published: 12/1/1994
Authors: Robert D. Larrabee, Michael T Postek
Abstract: There are a number of parameters used to characterize a measurement result for the purposes of specifying its value for the intended purpose. Precision (variability) and accuracy (correctness) are two of the more often used parameters and, like many ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820687

185. National Institute of Standards and Technology (NIST) J93 Project Proposal Report
Published: 6/15/1994
Authors: Michael T Postek, Robert D. Larrabee, L Linholm, James Edward Potzick, J Schneir, T Mcwaid, Michael W Cresswell, Richard A Allen, E Clayton Teague
Abstract: Unavailable.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820703

186. A Monte Carlo Model for SEM Linewidth Metrology
Published: 5/1/1994
Authors: J R. Lowney, Michael T Postek, Andras Vladar
Abstract: A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam / specimen interaction, accurate edge location cannot be obtained. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820689

187. Critical Issues in Scanning Electron Microscope Metrology
Published: 1/1/1994
Author: Michael T Postek
Abstract: During the manufacturing of present-day integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of repeatability. Optical microscopy, scanning electron microscopy, and the various ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820701

188. Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology
Published: 1/1/1994
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, Egon Marx, Robert D. Larrabee
Abstract: This work provides an approach to improved x?ray mask linewidth metrology and a more precise edge location algorithm for measurement of feature sizes on x?ray masks in commercial instrumentation. The transmitted electron detection mode is also useful ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820704

189. Scanning Electron Microscope Metrology
Published: 1/1/1994
Author: Michael T Postek
Abstract: During the manufacturing of present-day integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of precision. Optical microscopy, scanning electron microscopy and the various form ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820702

190. Traceable Standards for Scanning Electron Microscopy
Published: 1/1/1994
Author: Michael T Postek
Abstract: The emphasis on International Standards Organization (ISO) certification of laboratories has resulted in a renewed interest in NIST traceable standards for scanning electron microscopy (SEM). Under ISO certification, it is mandatory to calibrate and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820996



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