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Author: yaw obeng

Displaying records 11 to 20 of 26 records.
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11. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912850

12. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913332

13. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913440

14. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911714

15. Metrology for Nanosystems and Nanoelectronics Reliability Assessments
Published: 8/20/2012
Authors: Yaw S Obeng, Chukwudi Azubuike Okoro, Joseph J Kopanski
Abstract: The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911433

16. A Case Study on the Impact of Local Material Chemistry on the Mechanical Reliability of Packaged Integrated Circuits: Correlation of the Packaging Fallout to the Chemistry of Passivation Dielectrics in an Al-Cu System
Published: 3/19/2012
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng
Abstract: In this paper, we use a variety of analytical techniques to examine the impact of local chemistry, and the mechanical properties, of the encapsulation dielectric films on the post-packaging device rejection rate of integrated circuit devices. A stro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909379

17. Towards clean and crackless transfer of graphene
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

18. Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems
Published: 4/21/2011
Authors: Alamgir Karim, Veena Misra, G. Srinivasan, Yaw S Obeng, S De Gendt
Abstract: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908455

19. Graphene - Is it the future for Semiconductors? A High Level Overview of Materials, Devices and Applications.
Published: 4/11/2011
Authors: Yaw S Obeng, P Srinivasan
Abstract: In this paper, we attempt to summarize the graphene component of the first two of the GRAPHENE, Ge/III-V AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS symposia [1, 2]. While not exhaustive and complete, a review of the papers presented at these s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907706

20. The Case for Innovations in Photovoltaics: the Nonmaterial Edge
Published: 1/26/2011
Authors: Yaw S Obeng, Kathleen Richardson
Abstract: The limitations of current thin film and the gaps to cost efficient photovoltaic (PV) cells will be discussed in the presentation. This discussion will suggest ways to improve PV cell performance through the use of reduced dimension materials (e.g., ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907680



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