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Author: nhan nguyen
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1. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

2. Airless Solar System Bodies: Improvements to Radiative Transfer Modeling of Reflectance Spectra
Published: 11/2/2010
Author: Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908442

3. Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties
Published: 9/1/2005
Authors: Safak Sayan, Mark Croft, Nhan V Nguyen, Tom Emge, Evgeni Gusev, Hyunjung Grace Kim, James R. Ehrstein, Paul McIntyre, Eric Garfunkel
Abstract: As medium-high permittivity dielectrics approach use in MOSFET production, an atomic level understanding of their permittivity and the capacitance of structures made from them are being rigorously examined. In this note, the issue of crystal structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31646

4. Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics
Published: 12/2/1999
Authors: Curt A Richter, Nhan V Nguyen, G A Alers, X Guo, Xiaorui Wang, T P Ma, T Tamagawa
Abstract: Extended abstract on Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics. Opening paragraph of abstract: There is tremendous interest in high dielectric constant (high-k) films to use as alternates to S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30167

5. Assessment of Utlra-thin SiO2 Film Thickness Meaurement Precision by Ellipsometry
Published: 9/30/2003
Authors: Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31461

6. Atomic Layer Deposition - Process Models and Metrologies
Published: 9/30/2005
Authors: D R. Burgess, J. E Maslar, W S. Hurst, E F. Moore, W A. Kimes, R R. Fink, Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32496

7. Backcontact CdSe/CdTE Windowless Solar Cells
Published: 2/1/2013
Authors: Donguk Kim, Carlos M. Hangarter, Ratan Kumar Debnath, Jong Yoon Ha, Carlos R Beauchamp, Matthew David Widstrom, Jonathan E Guyer, Nhan V Nguyen, B. Y. Yoo, Daniel Josell
Abstract: This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912050

8. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189

9. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105

10. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911342



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