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Author: nhan nguyen

Displaying records 71 to 73.
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71. Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications
Published: Date unknown
Authors: Y S Lin, R Puthenkovilakam, J P Chang, C P. Bouldin, Igor Levin, Nhan V Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
Abstract: The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO^d2^/ Si and ZrO^d2^/SiO^d2^/Si were investigated and the interfacial layer of as-deposited ZrO^d2^ on silicon is likely to be ZrSi^dx^O^dy^. The ZrO^d2^/ZrSi^ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850704

72. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

73. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242



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