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You searched on: Author: nhan nguyen

Displaying records 71 to 78.
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71. Characterization of the ZnSe/GaAs Interface by TEM and Spectroscopic Ellipsometry
Published: 12/31/1993
Authors: R. Dahmani, Lourdes Salamanca-Riba, Nhan V Nguyen, Deane Chandler-Horowitz, B T Jonker

72. Interface Sharpness During the Initial Stages of Growth of Thin, Short-Period III-V Superlattices
Published: 12/31/1993
Authors: Joseph G. Pellegrino, S. B. Qadri, C. M. Cotell, Paul M. Amirtharaj, Nhan V Nguyen, J. Comas

73. Interface Roughness of Short-Period AlAs/GaAs Superlattices Studied by Spectroscopic Ellipsometry
Published: 6/1/1993
Authors: Nhan V Nguyen, Joseph G. Pellegrino, Paul M. Amirtharaj, David G Seiler, S. B. Qadri

74. Metrologic Support for the DARPA/NRL-XRL Mask Program: Ellipsometric Analyses of SiC Thin Films on Si
Series: NIST Interagency/Internal Report (NISTIR)
Published: 1/1/1993
Authors: Deane Chandler-Horowitz, Nhan V Nguyen, Jay F. Marchiando, Paul M. Amirtharaj

75. Interface Sharpness in Low-Order III-V Superlattices
Published: 12/31/1992
Authors: Joseph G. Pellegrino, S. B. Qadri, Paul M. Amirtharaj, Nhan V Nguyen, J. Comas

76. Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications
Published: Date unknown
Authors: Y S Lin, R Puthenkovilakam, J P Chang, C P. Bouldin, Igor Levin, Nhan V Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
Abstract: The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO^d2^/ Si and ZrO^d2^/SiO^d2^/Si were investigated and the interfacial layer of as-deposited ZrO^d2^ on silicon is likely to be ZrSi^dx^O^dy^. The ZrO^d2^/ZrSi^ ...

77. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

78. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...

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