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Author: nhan nguyen

Displaying records 41 to 50 of 73 records.
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41. Ultra-thin SiO^d2^ on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements
Published: 12/1/2003
Authors: M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan V Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph A. Dura
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31596

42. Design and Performance of Capping Layers for Extreme-Ulatraviolet Multilayer Mirrors
Published: 10/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
Abstract: Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840180

43. Assessment of Utlra-thin SiO2 Film Thickness Meaurement Precision by Ellipsometry
Published: 9/30/2003
Authors: Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31461

44. Optical properties of Jet-Vapor-Deposited TiAlO and HfAlO Determined by Vacuum Utraviolet Spectroscopic Elliposmetry
Published: 9/30/2003
Authors: Nhan V Nguyen, Jin-Ping Han, Jin S. Kim, Yong Jai Cho, Wenjuan Zhu, Zhijiong Luo, T P Ma
Abstract: In this report, we use vacuum ultraviolet spectroscopic ellipsometry (VUV-SE) to determine the optical as well as structural properties of high-k metal oxides, in particular, of Hafnium Aluminates and Titanium Aluminates. Two sets of samples consisti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31379

45. Design and Performance of Capping Layers for EUV Multilayer Mirrors
Published: 6/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
Abstract: The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840159

46. Interfacial Properties of ZrO^d2^ on Silicon
Published: 5/15/2003
Authors: Y S. Lin, R Puthenkovilakam, J Chang, Charles E. Bouldin, Igor Levin, Nhan V Nguyen, James R. Ehrstein, Ying Sun, P Pianetta, T Conard, Wilfried Vandervorst, V Venturo, S Selbrede
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31466

47. Design and performance of capping layers for extreme-ultraviolet multilayer mirrors
Published: 1/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M E Malinowski, Eric M Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101435

48. Spectroscopic Ellipsometry Characterization of High-K Dielectric HfO^d2^ Thin Films and the High-Temperature Annealing on Their Optical Properties
Published: 2/18/2002
Authors: Yong J. Cho, Nhan V Nguyen, Curt A Richter, James R. Ehrstein, Byoung H. Lee, Jack C. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8355

49. Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices
Published: 5/13/2001
Authors: John S Suehle, Eric M. Vogel, Monica D Edelstein, Curt A Richter, Nhan V Nguyen, Igor Levin, Debra L Kaiser, Hanchang F Wu, J B Bernstein
Abstract: As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30236

50. Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films
Published: 2/6/2001
Authors: Alain C. Diebold, J Canterbury, W Chism, Curt A Richter, Nhan V Nguyen, James R. Ehrstein, C E. Weintraub
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26438



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