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Author: nhan nguyen

Displaying records 41 to 50 of 72 records.
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41. Design and Performance of Capping Layers for Extreme-Ulatraviolet Multilayer Mirrors
Published: 10/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
Abstract: Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840180

42. Assessment of Utlra-thin SiO2 Film Thickness Meaurement Precision by Ellipsometry
Published: 9/30/2003
Authors: Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31461

43. Optical properties of Jet-Vapor-Deposited TiAlO and HfAlO Determined by Vacuum Utraviolet Spectroscopic Elliposmetry
Published: 9/30/2003
Authors: Nhan V Nguyen, Jin-Ping Han, Jin S. Kim, Yong Jai Cho, Wenjuan Zhu, Zhijiong Luo, T P Ma
Abstract: In this report, we use vacuum ultraviolet spectroscopic ellipsometry (VUV-SE) to determine the optical as well as structural properties of high-k metal oxides, in particular, of Hafnium Aluminates and Titanium Aluminates. Two sets of samples consisti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31379

44. Design and Performance of Capping Layers for EUV Multilayer Mirrors
Published: 6/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
Abstract: The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840159

45. Interfacial Properties of ZrO^d2^ on Silicon
Published: 5/15/2003
Authors: Y S. Lin, R Puthenkovilakam, J Chang, Charles E. Bouldin, Igor Levin, Nhan V Nguyen, James R. Ehrstein, Ying Sun, P Pianetta, T Conard, Wilfried Vandervorst, V Venturo, S Selbrede
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31466

46. Design and performance of capping layers for extreme-ultraviolet multilayer mirrors
Published: 1/1/2003
Authors: S Bajt, H N Chapman, Nhan Nguyen, J Alameda, J C Robinson, M E Malinowski, Eric M Gullikson, Andrew Aquila, Charles S Tarrio, Steven E Grantham
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101435

47. Spectroscopic Ellipsometry Characterization of High-K Dielectric HfO^d2^ Thin Films and the High-Temperature Annealing on Their Optical Properties
Published: 2/18/2002
Authors: Yong J. Cho, Nhan V Nguyen, Curt A Richter, James R. Ehrstein, Byoung H. Lee, Jack C. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8355

48. Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices
Published: 5/13/2001
Authors: John S Suehle, Eric M. Vogel, Monica D Edelstein, Curt A Richter, Nhan V Nguyen, Igor Levin, Debra L Kaiser, Hanchang F Wu, J B Bernstein
Abstract: As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30236

49. Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films
Published: 2/6/2001
Authors: Alain C. Diebold, J Canterbury, W Chism, Curt A Richter, Nhan V Nguyen, James R. Ehrstein, C E. Weintraub
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26438

50. Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: a Fundamental Difference
Published: 2/1/2001
Authors: Curt A Richter, Nhan V Nguyen, Evgeni Gusev, T H Zabel, G A Alers
Abstract: We will describe a fundamental difference between the interpretation of optical and electrical measurements of gate dielectric thickness. This difference has major ramifications on the characterization of, and metrology for, advanced, alternate gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=2338



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