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Author: eric lin
Displaying records 181 to 190 of 197 records.
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181.
Polymer Mobility Near the Polymer/Solid Interface
Published: 5/6/1999
Authors: Eric K Lin, Wen-Li Wu, Sushil K. Satija, R Kolb
Abstract: Neutron reflectometry is used to measure polymer mobility near an attractive solid surface over distances less than the bulk polymer radius of gyration, R^dg^. Effective diffusion coefficients, D^deff^, are determined from the rates of interdiffusio
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851396
182.
Enhanced Polymer Segment Exchange Kinetics Due to an Applied Shear Field
Published: 1/1/1999
Authors: Eric K Lin, R Kolb, Sushil K. Satija, Wen-Li Wu
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853707
183.
Additive-Containing Rinses for LER and Defectivity Control During High-Resolution Resist Patterning
Published: Date unknown
Authors: D L Goldfarb, S D Burns, M Angelopolous, S Skordas, R L Burns, M C Lawson, C J Brodsky, V Vishnu, E Jablonski, Vivek M Prabhu, Ronald Leland Jones, B D. Vogt, Christopher L Soles, Eric K Lin, Wen-Li Wu
Abstract: The addition of a surface conditioning agent to the de-ionized water rinse used to quench the photoresist development process is an attractive methodology that can afford a controlled decrease in resist line edge roughness (LER) or a reduction in def
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852849
184.
Chemical Force Microscopy for Imaging Chemical Distributions in Undeveloped Resists
Published: Date unknown
Authors: John Taylor Woodward IV, Jeeseong Hwang, Bryan D. Vogt, Vivek M Prabhu, Eric K Lin, Kwang-Woo Choi, Harun Solak, Michael Leeson
Abstract: Controlling line width roughness (LWR) is a critical problem in the development of EUV resists. Contributing to the difficulty of reducing LWR is the limited knowledge of the nanoscale morphology of the resist film throughout the process. Generally
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841144
185.
Chemically Amplified Photoresists Fundamental Properties and Limits of Applicability to Sub-100 nm Lithography
Published: Date unknown
Authors: D M Goldfarb, Eric K Lin, Christopher L Soles, B C Trinque, S D Burns, Ronald Leland Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G Wilson, Sushil K. Satija, Wen-Li Wu
Abstract: State-of-the-art lithographic technologies combine chemically amplified photoresists and sophisticated radiation sources to delineate patterned areas with high spatial resolution, enabling the fabrication of continually decreasing feature sizes in th
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852128
186.
Fluorescence Correlation Spectroscopy Investigation of Growth Factor Dynamics in Three Dimensional Extracellular Matrices
Published: Date unknown
Authors: Michael Weir, Chengqing C. Wang, Vivek M Prabhu, Eric K Lin, K Yamada, N Washburn
Abstract: Fluorescence correlation spectroscopy was used to measure the binding and diffusion of growth factors in model extracellular matrices in order to investigate the importance of protein-matrix interactions in regulating signaling molecules within a thr
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852367
187.
Functional Oligothiophenes for Use in Self-Assembled Monolayer Field-Effect Transistors
Published: Date unknown
Authors: A R. Murphy, Clayton Mauldin, J M. Frechet, Paul C Chang, Kanan Putambekar, Kin-Yip Phoa, V Subramanian, Dean M DeLongchamp, Daniel A Fischer, Eric K Lin
Abstract: Asymmetric, end-functionalized thiophene oligomers capable of self-assembly and covalent bonding to silicon surfaces have been synthesized. Monolayer films were made using solution or Langmuir-Blodgett deposition techniques. Characterization of the f
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852649
188.
Influence of Strongly Interacting Hompolymers on the Long-Range Order in Semi-Crystalline Block Copolymer Templates
Published: Date unknown
Authors: Vijay Tirumala, B D. Vogt, Eric K Lin, J J. Watkins
Abstract: Long-range order and the strength of domain segregation in semicrystalline block copolymers are often hindered by the rapid crystallization within the blocks. We found that the copolymer template ordering in such a case can be improved by blending wi
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852652
189.
Interfacial Modification of Silica Surfaces Through -Isocanatopropyl Triethoxy Silane--Amine Coupling Reactions
Published: Date unknown
Authors: Brandon M. Vogel, Dean M DeLongchamp, Christine M. Mahoney, Leah A. Lucas, Daniel A Fischer, Eric K Lin
Abstract: The surface reaction of gamma-isocyanatopropyl triethoxy silane coupling agent and octadecyl amine was investigated water contact goniometry, near edge x-ray absorption fine structure spectroscopy and time of flight secondary ion mass spectrometry.
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852628
190.
Investigation of N^d2^ Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-Ray Reflectivity
Published: Date unknown
Authors: Hae-Jeong Lee, Eric K Lin, J K Lan, Y L Cheng, H C Liou, Wen-Li Wu, Y L Wang, M S Feng, C G Chao
Abstract: Non-destructive, specular X-ray reflectivity (SXR) measurements were used to investigate N2 plasma effects on the density depth profile of hydrogen silsesquioxane (HSQ) thin films. The SXR data indicate that the density profile of an HSQ film withou
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851763