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Author: zachary levine

Displaying records 31 to 40 of 103 records.
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31. Imaging Material Components of an Integrated Circuit Interconnect
Published: 1/1/2004
Authors: Zachary H Levine, Steven E Grantham, D J Paterson, I McNulty, I C Noyan, T M Levin
Abstract: Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was reco ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840160

32. Imaging material components of an integrated circuit interconnect
Published: 1/1/2004
Authors: Zachary H Levine, Steven E Grantham, D Paterson, I McNulty, I C Noyan, T M Levin
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101597

33. Photoelastic and Elastic Properties of the Fluorite Structure Materials, LiF, and Si
Published: 10/1/2003
Authors: Zachary H Levine, John H. Burnett, Eric L Shirley
Abstract: We present computational results of the photoelastic and elastic properties of calcium fluoride, strontium fluoride, barium fluoride, lithium fluoride, and silicon. We also present measurements of the photoelastic properties in the visble through th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841747

34. Tomography in the Multiple Scattering Regime of the Scanning Transmission Electron Microscope
Published: 6/1/2003
Author: Zachary H Levine
Abstract: To date, nearly all tomography based on electron microscopy has been performed on samples 1 m or less thick. It has also relied on Beer s Law. In this work, tomographic reconstructions of a simulated scans of a photonic band-gap crystal based on b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840150

35. Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope
Published: 2/1/2003
Authors: Zachary H Levine, J J Gao, S Neogi, T M Levin, J HJ Scott, Steven E Grantham
Abstract: At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840139

36. Mass Absorption Coefficient of Tungsten and Tantalum, 1450 eV to 2350 eV: Experiment, Theory, and Application
Series: Journal of Research (NIST JRES)
Published: 1/1/2003
Authors: Zachary H Levine, S Grantham, Charles S Tarrio, D Paterson, I McNulty, T M Levin, A L Ankudinov, J J Rehr
Abstract: The mass absorption coefficient of tungsten and tantalum was measured with soft x-ray photons from 1450 eV to 2350 eV using an undulator source. This includes the M^d3^, M^d4^, and M^d5^ absorption edges. X-ray absorption fine structure was calcul ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840133

37. Mass Absorption Coefficient of Tungsten and Tantalum,1450 eV to 2350 eV: Experiment, Theory, and Application
Series: Journal of Research (NIST JRES)
Published: 1/1/2003
Authors: Zachary H Levine, S Grantham, Charles S Tarrio, D Patterson, I McNulty, T M Levin, A L Ankudinov, J J Rehr
Abstract: Summary of the WERB approved article Mass Absorption Coefficient of Tungsten and Tantalum, 1450 to 2350 eV: Experiment, Theory, and Application by myself and 7 other authors in J. Res. NIST 108 1-10 (2003)
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840177

38. Mass absorption coefficient of tungsten and tantalum, 1450 eV to 2350 eV: experiment, theory, and application,
Published: 1/1/2003
Authors: Zachary H Levine, Steven E Grantham, Charles S Tarrio, D J Paterson, I McNulty, T M Levin, A L Ankudinov, J J Rehr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101858

39. Parallax measurements of integrated circuit interconnects using a scanning transmission electron microscope
Published: 1/1/2003
Authors: Zachary H Levine, J J Gao, S Neogi, T M Levin, J H Scott, Steven E Grantham
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101600

40. Photoelastic and Elastic Properties of The Fluorite Structure Materials, LiF, and Si
Published: 1/1/2003
Authors: Zachary H Levine, J H Burnett, Eric L Shirley
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=103970



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