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Author: joseph kopanski
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1. 2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures
Published: 12/31/1995
Authors: G. Neubauer, A. Erickson, C. C. Williams, Joseph J Kopanski, M. Rodgers, D. Adderton
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18647

2. A Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 12/31/1997
Authors: Jay F. Marchiando, Joseph J Kopanski, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8738

3. A Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 2/1/1998
Authors: Jay F. Marchiando, Joseph J Kopanski, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26143

4. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

5. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

6. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

7. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

8. AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Published: 10/30/2003
Authors: Joseph J Kopanski, Erik Collart
Abstract: USJ-2003 provided an international forum for a broad ranging discussion of the current and future needs for ultra-shallow junctions, new ideas for fabrication of ultra-shallow junctions, recent advancements of analytical characterization techniques, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31412

9. Accomplishments in Nanotechnology
Series: Special Publication (NIST SP)
Report Number: 1052
Published: 8/1/2006
Authors: Michael T Postek, Joseph J Kopanski, David A Wollman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32512

10. Advanced Capacitance Metrology for Nanoelectronic Device Characterization
Published: 10/5/2009
Authors: Curt A Richter, Joseph J Kopanski, Yicheng Wang, Muhammad Yaqub Afridi, Xiaoxiao Zhu, D. E Ioannou, Qiliang Li, Chong Jiang
Abstract: We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MIM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903268



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