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You searched on: Author: joseph kopanski

Displaying records 61 to 70 of 116 records.
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61. Atomic Force Microscope Laser Illumination Effects on a Sample and Its Application for Transient Spectroscopy
Published: 9/23/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) is used to monitor the irradiation effect on a sample in a conventional atomic force microscope (AFM). The photo-excitation of carriers in a silicon sample caused by an AFM laser is measured from SCM capacitanc ...

62. Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope
Published: 8/15/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk
Abstract: A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configu ...

63. PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published: 4/27/2003
Authors: Gyoung Ho Buh, Chi Tran, Joseph J Kopanski
Abstract: A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tun ...

64. High Spatial Resolution Automatic Resistivity Mapping of Semiconductors
Published: 3/4/2003
Authors: M W. Matarazzo, Joseph J Kopanski

65. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski

66. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...

67. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex

68. Capacitive Probe Microscopy
Published: 1/15/2002
Author: Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitan ...

69. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando

70. Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
Published: 2/1/2001
Authors: Duncan McBride, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to ...

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  • SP 250-XX: Calibration Services
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