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You searched on: Author: joseph kopanski

Displaying records 61 to 70 of 112 records.
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61. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski

62. Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data
Published: 11/15/2002
Authors: Jay F. Marchiando, Joseph J Kopanski
Abstract: To develop a regression procedure to correlate scanning capacitance microscope data with dopant concentration in three dimensions, the inverse problem is treated in two dimensions as an optimization problem that is formulated as a regularized nonline ...

63. Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles
Published: 10/30/2002
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex

64. Capacitive Probe Microscopy
Published: 1/15/2002
Author: Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitan ...

65. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando

66. Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
Published: 2/1/2001
Authors: Duncan McBride, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to ...

67. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...

68. In Situ and Ex Situ Spectroscopic Ellipsometry of Low-Temperature-Grown GaAs
Published: 7/30/2000
Authors: Donald A. Gajewski, Nhan V Nguyen, Jonathan E Guyer, Joseph J Kopanski, Curt A Richter, Joseph G. Pellegrino

69. Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements
Published: 3/1/2000
Authors: Jay F. Marchiando, Joseph J Kopanski, John Albers
Abstract: The calibration or conversion curve method (CCM) refers here to using a database of calculations of the capacitance done for a matrix set of model parameters, such as oxide thickness, uniform dopant density, etc., as one method for interpreting scann ...

70. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 1/1/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...

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