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Author: joseph kopanski

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31. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

32. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

33. NIST Accomplishments in Nanotechnology
Series: Special Publication (NIST SP)
Report Number: 1052
Published: 1/1/2006
Authors: Michael T Postek, Joseph J Kopanski, David A Wollman
Abstract: This document includes a list of selected NIST accomplishments in nanotechnology for the period of fiscal years 2004 and 2005.  These accomplishments are grouped into the NNI s Program Component Areas (PCAs), which are defined in the text.   ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823212

34. Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins, Hyun-Keel Shin
Abstract: Photoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31874

35. Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins
Abstract: Undoped and Si-doped GaN epitaxial films have been grown on sapphire substrates by metal-organic chemical vapor deposition. Variable angle spectroscopic ellipsometry (VASE) and surface photovoltage (SPV) spectroscopy were used to determine the minori ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31729

36. Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: A special scanning capacitance microscopy (SCM) sample preparation method is exploited to make unipolar and p-n junction samples with different interface state densities and an identical oxide thickness. Using these samples, the interface states effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31743

37. Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: An experimental investigation of how interface states effect scanning capacitance microscopy (SCM) measurements is presented. Different sample polishing procedures were used to make SCM samples that would have different interface state densities, but ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31737

38. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31861

39. Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement
Published: 9/1/2004
Authors: Y. D. Hong, Tong Yeow Yeow, W. K. Chim, K. M. Wong, Joseph J Kopanski
Abstract: Scanning Capacitance Microscopy (SCM) is based on metal-oxide-semiconductor (MOS) theory. However, instead of the standard 100 kHz to 1 MHz signal used in conventional MOS capacitance-voltage measurement, SCM uses signal at 915 MHz. At this high freq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31417

40. Quantitative Interpretation of Scanning Capcitance Microscope Images as Two-Dimensional Dopant Profiles
Published: 3/10/2004
Authors: Joseph J Kopanski, Jay F. Marchiando
Abstract: Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conducti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31471