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You searched on: Author: colleen hood Sorted by: title

Displaying records 1 to 10 of 26 records.
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1. A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths
Published: 12/31/2000
Authors: Richard A Allen, Loren W. Linholm, Michael W. Cresswell, Colleen E. Hood
Abstract: A technique has been developed to fabricate 100-nm CD reference features with I-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: Under certain etch conditions, the edges of features align to crystall ...

2. Application of the Modified Voltage-Dividing Potentiometer to Overlay Metrology in a CMOS/Bulk Process
Published: 12/31/1994
Authors: Richard A Allen, Michael W. Cresswell, Loren W. Linholm, Jinsheng Wen, Colleen E. Hood, T. A. Hill, J. D. Benecke, S. R. Volk, H. D. Stewart

3. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr., Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...

4. Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices
Published: 7/1/2006
Authors: Jose M. Ortiz-Rodriguez, Allen R Hefner Jr., David Warren Berning, Colleen E. Hood, S. Olcum
Abstract: Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the ne ...

5. Computer-Controlled Thermal Cycling Tool to Aid in SiC Module Package Characterization
Published: 6/30/2010
Authors: Madelaine Herminia Hernandez, Jose Miguel Ortiz, Brian Joseph Grummel, Allen R Hefner Jr., David Warren Berning, Colleen E. Hood, Patrick McCluskey
Abstract: A software-controlled thermal cycling test system developed for SiC module package characterization is presented. Its interface permits the flexible definition of testing parameters like variable data acquisition rates and customizable cycle transiti ...

6. Electrical Test Structure for Overlay Metrology Referenced to Absolute Length Standards
Published: 12/31/1994
Authors: Michael W. Cresswell, William B. Penzes, Richard A Allen, Loren W. Linholm, Colleen E. Hood, E Clayton Teague

7. Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability
Published: 6/21/2007
Authors: Madelaine Herminia Hernandez, Adwoa Akuffo, Colleen E. Hood, Jose Miguel Ortiz, Allen R Hefner Jr.
Abstract: New automated metric systems and procedures have been developed and introduced in order to evaluate the long stability of SiC PiN diodes, and long term stability results are presented for 10 kV SiC PiN diodes that are made using a new low degradation ...

8. Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization
Published: 10/1/2006
Authors: David Warren Berning, Allen R Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
Abstract: A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A ...

9. High Speed IGBT Module Transient Thermal Response Measurements for Model Validation
Published: 10/12/2003
Authors: David Warren Berning, John Vincent Reichl, Allen R Hefner Jr., Mora Hernandez, Colleen E. Hood, Jih-Sheng Lai
Abstract: A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-ca ...

10. High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Published: 9/24/2009
Authors: Parrish Ralston, Tam Hoang Duong, Nanying Yang, David Warren Berning, Colleen E. Hood, Allen R Hefner Jr., Kathleen Meehan
Abstract: Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can ...

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  • SP 250-XX: Calibration Services
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