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Displaying records 1 to 10 of 146 records.
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1. 10 kV, 123 m {Omega}-cm^u2^ 4H-SiC Power DMOSFETs
Published: 8/1/2004
Authors: Sei-Hyung Ryu, Sumi Krishnaswami, Michael O'Loughlin, James Richmond, Anant Agarwal, John W. Palmour, Allen R Hefner Jr.
Abstract: 10 kV, 123 m{Omega}-cm^u2^ Power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R^don,sp,^ compared to previously reported value, was achieved by using an 8 x 1014 cm-3 doped, 85 {mu}m thick drift epilayer. An effective channel mobility of 2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31865

2. 10 kV, 5A 4H-SiC Power DMOSFET
Published: 5/1/2006
Authors: Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R Hefner Jr.
Abstract: In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 {mu}m thick n-type epilay ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32301

3. 3-D Thermal Component Model for Electrothermal Analysis of Multichip Power Modules with Experimental Validation
Published: 1/16/2015
Authors: John Vincent Reichl, Jose Miguel Ortiz, Allen R Hefner Jr., Jih-Sheng Lai
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918649

4. 4 Amp 4H-SiC JBD Diodes
Published: 5/1/2000
Authors: Ranbir Singh, Sei-Hyung Ryu, M. Palmer, Allen R Hefner Jr., Jih-Sheng Lai
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9146

5. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr., Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16

6. A Dynamic Electro-Thermal Model for the IGBT
Published: 12/31/1992
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=12852

7. A Dynamic Electro-Thermal Model for the IGBT
Published: 11/16/1992
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28061

8. A High-Speed Thermal Imaging System for Semiconductor Device Analysis
Published: 4/1/2001
Authors: Allen R Hefner Jr., David Warren Berning, David L. Blackburn, Christophe C. Chapuy, Sebastien Bouche
Abstract: A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 {mu}s time, and 15 {mu}m spatial resolution. The system uses virtu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15525

9. A Monolithic CMOS Microhotplate-based Gas Sensor System
Published: 12/1/2002
Authors: Muhammad Yaqub Afridi, John S Suehle, Mona Elwakkad Zaghloul, David Warren Berning, Allen R Hefner Jr., Richard E Cavicchi, Stephen Semancik, C B. Montgomery, C J. Taylor
Abstract: A monolithic CMOS microhotplate-based conductance type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the microhotplates include a one-millisecond therma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30895

10. A Monolithic Implementation of Interface Circuitry for CMOS Compatible Gas-Senor System
Published: 6/1/2002
Authors: Muhammad Yaqub Afridi, John S Suehle, Mona Elwakkad Zaghloul, David Warren Berning, Allen R Hefner Jr., Stephen Semancik, Richard E Cavicchi
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903500



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