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Author: allen hefner jr
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1. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...

2. NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 2.0
Series: Special Publication (NIST SP)
Report Number: 1108R2
Published: 2/16/2012
Authors: George W Arnold, Gerald J FitzPatrick, David A Wollman, Thomas L Nelson, Paul A Boynton, Galen H Koepke, Allen R Hefner Jr, Cuong T Nguyen, Jeffrey A. Mazer, Dean Eldon Prochaska, Marianne Swanson, Tanya L Brewer, Victoria Y Pillitteri, David H Su, Nada T Golmie, Eric D Simmon, Allan C Eustis, David G Holmberg, Steven T Bushby, Michael D Janezic, Ajitkumar Jillavenkatesa
Abstract: The Energy Independence and Security Act (EISA) of 2007 requires that NIST develop a framework of standards for the Smart Grid. This document is the second release of the framework first published in January, 2010. It covers the activities and output ...

3. Coordination and Acceleration of Smart Grid Interoperability Standards
Published: 12/2/2011
Author: Allen R Hefner Jr

4. Performance of Hybrid 4.5kV SiC JBS Freewheeling Diode and Si IGBT
Published: 9/16/2011
Authors: Karl Hobart, Eugene Imhoff, F. J. Kub, Allen R Hefner Jr, Tam Hoang Duong, Jose Miguel Ortiz, Sei-Hyung Ryu, David Grider, Scott G Leslie, Jerry Sherbondy, B Ray

5. Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging
Published: 7/18/2011
Authors: Brian Joseph Grummel, Z. John Shen, Allen R Hefner Jr
Abstract: Transient liquid phase (TLP) bonding is an advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances current soldering techniques by raising the melting point to over 500 °C without detrim ...

6. Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices
Published: 5/24/2011
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to ov ...

7. Development, Performance and Applications of 4.5 kV SiC JBS Diodes
Published: 3/22/2011
Author: Allen R Hefner Jr

8. Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications
Published: 3/10/2011
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose Miguel Ortiz, Eugene Imhoff, Jerry Sherbondy
Abstract: A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of bot ...

9. Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters
Published: 2/24/2011
Author: Allen R Hefner Jr

10. Status of Electric Power Research Institute / Sandia National Lab Photovoltaic-Storage Inverter Communication Project
Published: 2/9/2011
Author: Allen R Hefner Jr

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