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Author: allen hefner jr

Displaying records 31 to 40 of 141 records.
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31. Electrical and Thermal Characterization, Modeling, and Reliability Assessment of Power Semiconductor Modules
Published: 10/28/2009
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907113

32. High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Published: 9/24/2009
Authors: Parrish Ralston, Tam Hoang Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R Hefner Jr, Kathleen Meehan
Abstract: Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903137

33. Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants
Published: 8/7/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902439

34. Advanced Power Conditioning System Technologies for High-Megawatt Fuel Cell Power Plants
Published: 7/1/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32843

35. Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module
Published: 6/13/2008
Authors: Tam Hoang Duong, Jose Miguel Ortiz, R. N Raju, Allen R Hefner Jr
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II p ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33006

36. Thermal Network Component Models for 10 kV SiC Power Module Packages
Published: 6/13/2008
Authors: Jose Miguel Ortiz, Madelaine Herminia Hernandez, Tam Hoang Duong, Scott G Leslie, Allen R Hefner Jr
Abstract: The DARPA WBGS-HPE program is developing 100 A, 10 kV SiC power modules to demonstrate the viability of a 2.75 MVA Solid State Power Substation that uses 10 kV, 20 kHz switching-capable devices. Thermal network component models for these modules are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33007

37. High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules
Published: 6/2/2008
Authors: David W. Berning, Tam Hoang Duong, Jose Miguel Ortiz, Angel Rivera, Allen R Hefner Jr
Abstract: A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33062

38. High Temperature, High Power Module Design for Wide Bandgap Semiconductors: Packaging Architecture and Materials Considerations
Published: 5/1/2008
Authors: Allen R Hefner Jr, Z. John Shen, Ryan McClure, Ali Gordon, Brian Grummel
Abstract: Wide bandgap power semiconductors such as SiC or GaN can safely operate at a junction temperature of 500°C. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and costly cooling components ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33018

39. Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules
Published: 3/3/2008
Author: Allen R Hefner Jr
Abstract: Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32930

40. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32831



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