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Author: allen hefner jr

Displaying records 131 to 140 of 141 records.
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131. An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator
Published: 7/31/1991
Authors: Allen R Hefner Jr, D. M. Diebolt
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19115

132. An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 12/31/1990
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3555

133. Device Models, Circuit Simulation, and Computer Controlled Measurements for the IGBT
Published: 12/31/1990
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18453

134. Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 12/1/1990
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1272

135. An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 10/1/1990
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24009

136. An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 6/21/1990
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24937

137. An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 12/31/1989
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13970

138. A Steady-State Model for the Insulated Gate Bipolar Transistor
Published: 12/31/1988
Authors: Allen R Hefner Jr, David L. Blackburn, Kathleen Gallo
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11028

139. An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor
Published: 12/31/1988
Authors: Allen R Hefner Jr, David L. Blackburn
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=20497

140. Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT)
Published: 12/31/1988
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24480



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