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You searched on: Author: allen hefner jr

Displaying records 131 to 140 of 146 records.
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131. Simulating the Dynamic Electro-Thermal Behavior of Power Electronic Circuits and Systems
Published: 12/31/1992
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14148

132. A Dynamic Electro-Thermal Model for the IGBT
Published: 11/16/1992
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28061

133. Semiconductor Measurement Technology: INSTANT - IGBT Network Simulation and Transient ANalysis Tool
Series: Special Publication (NIST SP)
Published: 6/1/1992
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27991

134. An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator
Published: 12/31/1991
Authors: Allen R Hefner Jr., D. M. Diebolt
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27637

135. Insulated Gate Bipolar Transistor (IGBT) Modeling Using IG-Spice
Published: 12/31/1991
Authors: C. S. Mitter, Allen R Hefner Jr., D X Chen, F. C. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=375

136. An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator
Published: 7/31/1991
Authors: Allen R Hefner Jr., D. M. Diebolt
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19115

137. An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 12/31/1990
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3555

138. Device Models, Circuit Simulation, and Computer Controlled Measurements for the IGBT
Published: 12/31/1990
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18453

139. Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 12/1/1990
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1272

140. An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published: 10/1/1990
Author: Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24009



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