You searched on: Author: david gundlach
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41. Structure and Properties of Small Molecule-Polymer Blend Semiconductors and High-k Polymer Dielectric for Printable Organic Electronics
Do Yeung Yoon, Jeongwon Kang, Nayool Shin, Do Young Jang, Youngeun Jo, Yeon Sook Chung, Vivek M Prabhu, Dean M DeLongchamp, Regis J Kline, Lee J Richter, David J Gundlach, John E Anthony
42. Electrical Characterization of Soluble Anthradithiophene Derivatives
Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Organic semiconductors remain an active subject for device physics and
material science because of their varied electrical properties and
potential for low-cost, high-throughput roll-to-roll processing.
Several high-mobility oligomers, such as pen ...
43. Towards Low-Noise Flexible Electronics
Oana Jurchescu, Hao Xiong, D A Mourey, D Zhao, J Sun, Curt A Richter, John E Anthony, Thomas Jackson, David J Gundlach
44. Molecular Orientation in Thin Films of Solution Processable Organic Semiconductors
Lee J Richter, Dean M DeLongchamp, Regis J Kline, Xinran Zhang, Steven D Hudson, Oana Jurchescu, David J Gundlach, Thomas Jackson, John E Anthony, Nayool Shin, Do Yeung Yoon
45. Effects of Polymorphism on Charge Transport in Organic Semiconductors
Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R Parkin, Brandon Vogel, John E Anthony, Thomas Jackson, David J Gundlach
The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity pr ...
46. Substrate-dependent interface composition and charge transport in films for organic photovoltaics
David Germack, Calvin Chan, Behrang H Hamadani, Lee J Richter, Daniel A Fischer, David J Gundlach, Dean M DeLongchamp
The buried interface composition of polymer-fullerene blends is found by near edge X ray absorption fine structure (NEXAFS) spectroscopy to depend on the surface energy of the substrate upon which they are cast. The interface composition determines ...
47. Flexible Solution-Processed Memristors
Nadine Emily Gergel-Hackett, Behrang H Hamadani, B Dunlap, John S Suehle, Curt A Richter, Christina Ann Hacker, David J Gundlach
We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoreticall ...
48. Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology and Performance in Thin Film Organic Transistors
Iain McCulloch, Martin Heeney, Michael L. Chabinyc, Dean M DeLongchamp, Regis J Kline, Michael Colle, Warren Duffy, Daniel A Fischer, David J Gundlach, Behrang H Hamadani, Rick Hamilton, Lee J Richter, Alberto Salleo, Martin Shkunov, David Sparrowe, Steve Tierney, Weimin Zhang
Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin film transistor devices. , With the possibility to formulate these p-type materials as inks and subsequently print into patterned devices, organic bas ...
49. The molecular basis of mesophase ordering in a thiophene-based copolymer
Dean M DeLongchamp, Regis J Kline, Youngsuk Jung, Eric K Lin, Daniel A Fischer, David J Gundlach, Andrew Moad, Lee J Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural ...
50. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...