NIST logo

Publications Portal

You searched on:
Author: john gillen
Sorted by: title

Displaying records 1 to 10 of 85 records.
Resort by: Date / Title


1. 3D Molecular Imaging SIMS
Published: 7/1/2006
Authors: John G Gillen, Albert J. Fahey, M Wagner, Christine M. Mahoney
Abstract: Thin monolayer and bilayer filsm of spin cast poly(methyl methacrylate) (PMMA), poly(2-hydroxyethyl methacrylate) (PHEMA), poly(lactic) acid (PLA) and PLA doped with several pharmaceuticals have been analyzed by dynamic SIMS using SF^d5^+ polyatomic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831393

2. Ambient Low Temperature Plasma Etching of Polymer Films for Virtually Damage-free SIMS Molecular Depth Profiling
Published: 11/8/2012
Authors: Shinichiro Muramoto, Timothy M Brewer, Matthew E Staymates, John G Gillen
Abstract: The feasibility of a low temperature plasma (LTP) probe as a way to prepare polymer bevel cross-sections for secondary ion mass spectrometry (SIMS) applications was investigated. Poly(lactic acid) and poly(methyl methacrylate) films were etched using ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911996

3. Application of Inkjet Printing Technology to Produce Test Materials of 1,3,5-Trinitro-1,3,5 Triazcyclohexane for Trace Explosive Analysis
Published: 10/15/2010
Authors: Eric S Windsor, Marcela Najarro Najarro, Anna N. Bloom, Bruce A Benner Jr, Robert A Fletcher, John G Gillen, Richard Lareau, Inho Cho, Mike Boldmand
Abstract: The feasibility of using piezoelectric drop-on-demand inkjet printing to prepare test materials for trace explosive analysis is demonstrated. Both pure high explosives and plastic-bonded putty explosives were formulated into inkjet printable solut ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902979

4. Automated Analysis of Organic Particles Using Cluster SIMS
Published: 6/1/2004
Authors: John G Gillen, Cynthia J Zeissler, Christine M. Mahoney, Abigail P. Lindstrom, Robert A Fletcher, P Chi, Jennifer R Verkouteren, David S. Bright, R Lareau, M Boldman
Abstract: Cluster primary ion bombardment combined with secondary ion imaging is used in an ion microscope secondary ion mass spectrometer for the spatially resolved analysis of organic particles on various surfaces. Compared to the use of monoatomic primary ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831316

5. Automated SIMS for Determining Isotopic Distributions in Particle Polutations
Published: 2/1/1998
Authors: David S Simons, John G Gillen, Cynthia J Zeissler, R H Fleming, P J McNitt
Abstract: A System has been developed to make rapid automated measurements of isotopic ratios from many individual micrometer-sized particles dispersed on a substrate. High particle throughput is achieved by using a commercial secondary ion microscope to coll ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831041

6. Band-Like Transport in Strongly-Coupled And Doped Quantum Dot Solids: A Route To High-Performance Thin-Film Electronics
Published: 4/17/2012
Authors: Ji-Hyuk Choi, Aaron T. Fafarman, Soong Ju Oh, Dong-Kyun Ko, David K. Kim, Benjamin T. Diroll, Shinichiro Muramoto, John G Gillen, Christopher Murray, Cherie R. Kagan
Abstract: Artificial solids constructed from colloidal quantum dot (QD) building blocks promise materials with tunable electronic properties. Yet high carrier mobilities and conductivities have been limited by weak coupling and low carrier concentrations. We r ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910423

7. Bevel Depth Profiling SIMS for Analysis of Layer Structures
Published: 9/1/2003
Authors: John G Gillen, Scott A Wight, P Chi, Albert J. Fahey, Jennifer R Verkouteren, Eric S Windsor, D. B. Fenner
Abstract: We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or ce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831302

8. Channeling-Induced Asymmetric Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass Spectrometry
Published: 5/1/2000
Authors: G Ramanath, J E Greene, I Petrov, J E Baker, L H Allen, John G Gillen
Abstract: Asymmetric depth profiles of elemental and molecular secondary ions are observed during secondary ion mass spectrometry (SIMS) analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs+ ion beam. The sputter-etching rate R and the secondary i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831134

9. Characterization and Ion-Induced Degradation of Cross-Linked Poly(Methyl Methacylate) Studies Using Time of Flight Secondary Ion Mass Spectrometry
Published: 12/30/2006
Authors: M S. Wagner, K Lenghaus, John G Gillen, Michael J Tarlov
Abstract: In this study, a series of random copolymers of methyl methacrylate (MMA) and ethylene glycol dimethacrylate (EGDMA) were prepared as surface-initiated polymer (SIP) films on silicon substrates using atom transfer radical polymerization. Positive and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831017

10. Characterization of Emerging Ambient Pressure Mass Spectrometric Techniques using Time-of-Flight Secondary Ion Mass Spectrometry
Published: 3/28/2014
Authors: Shinichiro Muramoto, Thomas P Forbes, Matthew E Staymates, John G Gillen
Abstract: Time-of-flight secondary ion mass spectrometry (ToF-SIMS) was used to characterize the desorption performance of two emerging ambient ionization mass spectrometry (MS) sources; desorption electrospray ionization (DESI) and low temperature plasma (LTP ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915103



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series