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You searched on: Author: john gillen

Displaying records 71 to 80 of 86 records.
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71. Compositional Changes in Aluminum-Lithium-Base Alloys Caused by Oxidation
Published: 1/1/1993
Authors: K K Soni, D. V. Williams, Dale E Newbury, John G Gillen, P. Chi, David S. Bright

72. Doped Gelatin Films as a Model Matrix for Molecular Secondary Ion Mass-Spectrometry Studies of Biological Soft-Tissue
Published: 1/1/1993
Authors: John G Gillen, S.M. Hues

73. Formation and Emission of Tetraalkylammonium Salt Molecular-Ions Sputtered from a Gelatin Matrix
Published: 1/1/1993
Authors: John G Gillen, J. Bennett

74. High Dynamic Range SIMS Depth Profiling on In Situ Ion-beam-generated Mesas Using the Ion Microscope
Published: 7/1/1992
Author: John G Gillen

75. Localization of Labeled Compounds in Human Hair Using SIMS
Published: 6/5/1992
Authors: John G Gillen, Cynthia J Zeissler

76. The Use of Kinetic-Engergy Distributions to Determine the Relative Contributions of Gas-Phase and Surface Fragmentation in Kiloelectronvolt Ion Sputtering of an Quaternary Ammonium Salt
Published: 4/15/1991
Author: John G Gillen

77. Image Depth Profiling SIMS: An evaluation for the analysis of light element diffusion for the analysis of light element diffusion in YBa2 Cu3O7-x single-crystal superconductors
Published: 1/1/1991
Authors: John G Gillen, Debra L. Kaiser, Jay S. Wallace

78. Molecular Ion Imaging and Dynamic Secondary Ion Mass Spectrometry Analysis of Organic Compounds
Published: 1/1/1990
Authors: John G Gillen, David S Simons, P. Williams
Abstract: An ion microscope equipped with a resistive anode encoder imaging system has been used to acquire molecular secondary ion images, with lateral resolutions on the order of 1 μm, from several quaternary ammonium salts an amino acid, and a polynucl ...

79. Secondary Ion Yield Matrix Effects in SIMS Depth Profiles of Si/Ge Multilayers
Published: 4/1/1989
Authors: John G Gillen, J M. Phelps, Randall W. Nelson, Peter Williams, Steven M. Hues
Abstract: Thin multilayer samples of Si/Ge, with individual layer thicknesses of 4-33 nm, have been analyzed by secondary ion mass spectrometry (SIMS) using Ar+, O2+ and Cs+ primary ion beams. Bombardment with both Ar+ and O2+ produced positive secondary ion d ...

80. Depth Profiling Using C^d60^+ SIMS Deposition and Topography Development During Bombardment of Silicon
Published: Date unknown
Authors: John G Gillen, J Batteas, Chris A Michaels, P Chi, John A Small, Eric S Windsor, Albert J. Fahey, Jennifer R Verkouteren, W Kim
Abstract: A C60+ primary ion source has been coupled to an ion microscope SIMS instrument to examine sputtering of silicon with an emphasis on possible application of C60+ depth profiling for high depth resolution SIMS analysis of silicon semiconductor materi ...

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