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You searched on: Author: john gillen

Displaying records 51 to 60 of 87 records.
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51. Secondary Ion Mass Spectrometry Using Cluster Primary Ion Beams
Published: 1/1/2003
Authors: John G Gillen, Albert J. Fahey
Abstract: At the National Institute of Standards and Technology (NIST) we have a capability for conducting cluster SIMS experiments on both our ion microscope and TOF-SIMS instruments. This paper will review our recent work on cluster ion source development, ...

52. Copper Oxide Precipitates in NBS Standard Reference Material 482
Series: Journal of Research (NIST JRES)
Published: 12/1/2002
Authors: Eric S Windsor, R Carlton, John G Gillen, Scott A Wight, David Seymour Bright
Abstract: Copper oxide has been detected in the copper containing alloys of Standard Reference Material (SRM) 482. This occurrence is significant because it represents heterogeneity within a standard reference material that was certified to be homogeneous on ...

53. Sol-Gel Materials for Gas Phase Sensing Using Microhotplate Arrays
Published: 2/1/2002
Authors: N O Savage, Richard E Cavicchi, Michael J Tarlov, Stephen Semancik, John G Gillen
Abstract: Sol-gel chemistry is used to create suspensions (sols) of small particles of materials such as metal oxides. These suspensions can be dried to a gel or powder or used in the sol form for coatings and thin films. One promising application of sol-gel d ...

54. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles
Published: 5/1/2001
Authors: E Fuoco, John G Gillen, M Wijesundara, William E Wallace, L Hanley
Abstract: In this paper examine the mechanism of secondary ion yield enhancements previously observed for polyatomic projectiles by measuring the weight loss, volume loss, and surface composition of poly(methylmethacrylate) (PMMA) films sputtered by keV SF^d5^ ...

55. Negative Cesium Sputter Ion Source for Generating Cluster Primary Ion Beams for Secondary Ion Mass Spectrometry Analysis
Published: 4/1/2001
Authors: John G Gillen, R Lance King, B Freibaum, R Lareau, J Bennett, F Chmara
Abstract: The use of a cluster (or polyatomic) primary ion projectile for organic SIMS has been demonstrated to increase the yield of characteristic molecular secondary ions, more efficiently desorb higher molecular weight species and reduce the accumulation o ...

56. Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization
Published: 1/1/2001
Authors: John G Gillen, S V. Roberson, Albert J. Fahey, Marlon L Walker, J Bennett, R Lareau
Abstract: We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF^d5^+, ...

57. High Temperature Materials for Thin-Film Thermocouples on Silicon Wafers
Published: 11/1/2000
Authors: Kenneth Gruber Kreider, John G Gillen
Abstract: We Have developed an instrumented calibration wafer for radiometric temperature measurements in rapid thermal processing (RPT) tools for semiconductor processing. The instrumented wafers have sputter deposited thin-film thermocouples to minimize th ...

58. Characterization of the Electron Beam Specimen Interaction in the ESEM with SIM Imaging
Published: 7/1/2000
Authors: Scott A Wight, John G Gillen, G B. Saupe
Abstract: A Secondary Ion Mass Spectrometry (SIMS) study has been undertaken to examine surfaces and films modified in the environmental scanning electron microscope (ESEM). Examination of the modifications induced by ESEM electrons and ions lead to a better ...

59. Channeling-Induced Asymmetric Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass Spectrometry
Published: 5/1/2000
Authors: G Ramanath, J E Greene, I Petrov, J E Baker, L H Allen, John G Gillen
Abstract: Asymmetric depth profiles of elemental and molecular secondary ions are observed during secondary ion mass spectrometry (SIMS) analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs+ ion beam. The sputter-etching rate R and the secondary i ...

60. Thin-Film Calibration Wafer Materials for RTP Temperature Measurement
Published: 7/1/1999
Authors: Kenneth Gruber Kreider, John G Gillen
Abstract: We are developing an instrumented calibration wafer for radiometric temperature measurements that uses thin-film thermocouples to minimize the thermal disturbance of the wafer by the sensors. The thin-film thermocouples are sputter deposited on a the ...

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