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Author: joseph fu

Displaying records 31 to 40 of 71 records.
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31. Dependency of Morphology on Miscut Angle for Si(111) Etched in NH^d4^F
Published: 5/1/2003
Authors: Joseph Fu, Hui Zhou, John A Kramar, Richard M Silver, S Gonda
Abstract: Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH^d4^F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the numbe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823151

32. Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F
Published: 5/1/2003
Authors: S Gonda, Joseph Fu, John A Kramar, Richard M Silver, Hui Zhou
Abstract: Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH(4)F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822425

33. A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM
Published: 1/1/2003
Authors: Xuezeng Zhao, Theodore Vincent Vorburger, Joseph Fu, Jun-Feng Song, C V Nguyen
Abstract: Nano-scale linewidth measurements are performed in semiconductor manufacturing and in the data storage industry and will become increasingly important in micro-mechanical engineering. With the development of manufacturing technology in recent years, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821974

34. A New Design and Uncertainty Budget for a Metrology UHV-STM Used in Direct Measurements of Atom Spacings
Published: 7/1/2002
Authors: S Gonda, Hui Zhou, Joseph Fu, Richard M Silver
Abstract: A basic scheme of direct, highly accurate dimensional measurements of nanostructures is presented. We have constructed a scanning tunneling microscope (STM) unit combined with a diode laser-based Michelson interferometer module. The compact size of t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821757

35. In the Rough
Published: 3/1/2002
Authors: Theodore Vincent Vorburger, Joseph Fu, N G Orji
Abstract: Surface roughness affects the function of a wide variety of engineering components, including airport runways, highways, ship hulls and mechanical parts. Perhaps the most demanding applications are in the optics and semiconductor industries. Surface ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821745

36. Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces
Published: 1/1/2002
Authors: Hui Zhou, Joseph Fu, S Gonda, Richard M Silver
Abstract: In order to meet leading edge and future measurement and calibration needs, NIST has been pursuing the development of atom-based dimensional standards and measurement methods. There are a few new, key concepts underlying this effort, which are intend ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821761

37. Nanomanufacturing of Atom-Based Dimensional Standards - A Final Project Report of the NAMT
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6850
Published: 1/1/2002
Authors: Robert Allen, J J. Pellegrino, D Monk, E Clayton Teague, Dennis A Swyt, Joseph Fu, Richard M Silver, Theodore Vincent Vorburger, Bradley N Damazo, Robert Russell, Thomas E Wheatley, Keith A Stouffer, Manfred Osti, David Wilmering, Richard L. Rhorer, Ram D Sriram
Abstract: This report describes the accomplishments of the Nanomanufacturing of Atom-based Dimensional Standards Project, which operated as part of the National Advanced Manufacturing Testbed (NAMT) a program formally operating from fiscal year (FY) 1996 to FY ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821672

38. Silicon Single Atom Steps as AFM Height Standards
Published: 8/1/2001
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore Vincent Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Abstract: Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821579

39. Atomic Level Surface Metrology
Published: 1/1/2001
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Jun-Feng Song, Thomas B Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger
Abstract: MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness ~ 0.1 nmSilicon gate oxides with thickness ~ 3 nm,rms roughness must be sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823146

40. Calibration of High-Resolution X-Ray Tomography With Atomic Force Microscopy
Series: Journal of Research (NIST JRES)
Published: 11/1/2000
Authors: A R Kalukin, B Winn, S S Wang, C Jacobsen, Zachary H Levine, Joseph Fu
Abstract: For two-dimensional x-ray imaging of thin films, the technique of scanning transmission x-ray miscroscopy (STXM) has achieved images with feature sizes as small as 40 nm in recent years. However, calibration of three-dimensional tomographic images t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840060