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Author: joseph fu

Displaying records 31 to 40 of 73 records.
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31. Nano-Lithography in Ultra-High Vacuum (UHV) for Real World Applications
Published: 3/11/2004
Authors: James D Gilsinn, Hui Zhou, Bradley N Damazo, Joseph Fu, Richard M Silver
Abstract: As nano-lithography technology improves, more companies and research groups have the capability to create nano-scale structures. Scanning tunneling microscopes (STMs) are commonly used to create these structures and evaluate them afterward. One diffi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822480

32. Nano-Lithography in Ultra-High Vacuum (UHV) for Real World Applications
Published: 3/1/2004
Authors: James D Gilsinn, Hui Zhou, Bradley N Damazo, Joseph Fu, Richard M Silver
Abstract: As nano-lithography technology improves, more companies and research groups have the capability to create nano-scale structures. Scanning tunneling microscopes (STMs) are commonly used to create these structures and evaluate them afterward. One diffi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822172

33. Dependency of Morphology on Miscut Angle for Si(111) Etched in NH^d4^F
Published: 5/1/2003
Authors: Joseph Fu, Hui Zhou, John A Kramar, Richard M Silver, S Gonda
Abstract: Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH^d4^F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the numbe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823151

34. Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F
Published: 5/1/2003
Authors: S Gonda, Joseph Fu, John A Kramar, Richard M Silver, Hui Zhou
Abstract: Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH(4)F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822425

35. A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM
Published: 1/1/2003
Authors: Xuezeng Zhao, Theodore Vincent Vorburger, Joseph Fu, Jun-Feng Song, C V Nguyen
Abstract: Nano-scale linewidth measurements are performed in semiconductor manufacturing and in the data storage industry and will become increasingly important in micro-mechanical engineering. With the development of manufacturing technology in recent years, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821974

36. A New Design and Uncertainty Budget for a Metrology UHV-STM Used in Direct Measurements of Atom Spacings
Published: 7/1/2002
Authors: S Gonda, Hui Zhou, Joseph Fu, Richard M Silver
Abstract: A basic scheme of direct, highly accurate dimensional measurements of nanostructures is presented. We have constructed a scanning tunneling microscope (STM) unit combined with a diode laser-based Michelson interferometer module. The compact size of t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821757

37. In the Rough
Published: 3/1/2002
Authors: Theodore Vincent Vorburger, Joseph Fu, N G Orji
Abstract: Surface roughness affects the function of a wide variety of engineering components, including airport runways, highways, ship hulls and mechanical parts. Perhaps the most demanding applications are in the optics and semiconductor industries. Surface ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821745

38. Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces
Published: 1/1/2002
Authors: Hui Zhou, Joseph Fu, S Gonda, Richard M Silver
Abstract: In order to meet leading edge and future measurement and calibration needs, NIST has been pursuing the development of atom-based dimensional standards and measurement methods. There are a few new, key concepts underlying this effort, which are intend ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821761

39. Nanomanufacturing of Atom-Based Dimensional Standards - A Final Project Report of the NAMT
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6850
Published: 1/1/2002
Authors: Robert Allen, J J. Pellegrino, D Monk, E Clayton Teague, Dennis A Swyt, Joseph Fu, Richard M Silver, Theodore Vincent Vorburger, Bradley N Damazo, Robert Russell, Thomas E Wheatley, Keith A Stouffer, Manfred Osti, David Wilmering, Richard L. Rhorer, Ram D Sriram
Abstract: This report describes the accomplishments of the Nanomanufacturing of Atom-based Dimensional Standards Project, which operated as part of the National Advanced Manufacturing Testbed (NAMT) a program formally operating from fiscal year (FY) 1996 to FY ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821672

40. Silicon Single Atom Steps as AFM Height Standards
Published: 8/1/2001
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore Vincent Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Abstract: Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821579



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