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Author: joseph fu

Displaying records 21 to 30 of 73 records.
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21. Traceable Atomic Force Microscope Dimensional Metrology at NIST
Published: 3/1/2006
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, Michael W Cresswell, Richard A Allen, William F Guthrie
Abstract: The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology.  There are two major instruments being used for traceable measurements at NIST.  The first is a cus ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823204

22. Nano- and Atomic-Scale Length Metrology
Published: 1/1/2006
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C Feng, Michael W Cresswell, Richard A Allen, William F Guthrie, Wei Chu
Abstract: We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823216

23. Discrepancies Between Roughness Measurements Obtained With Phase Shifting and White-Light Interferometry
Published: 10/1/2005
Authors: Hyug-Gyo Rhee, Theodore Vincent Vorburger, Jonathan W. Lee, Joseph Fu
Abstract: Discrepancies between phase shifting interferometry and white-light interferometry have been observed in step height and surface roughness measurements. The discrepancies have a strong relation to the roughness average parameter of the surface. The s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823181

24. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calib Standards With a Calibrated AFM at NIST
Published: 9/29/2005
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, Edwin Ross Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820918

25. Line Edge Roughness Metrology Using Atomic Force Microscopes
Published: 1/1/2005
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Joseph Fu, Ronald G Dixson, C V Nguyen, Jayaraman Raja
Abstract: Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823182

26. Linewidth Measurement from a Stitched AFM Image
Published: 1/1/2005
Authors: Joseph Fu, Ronald G Dixson, Ndubuisi George Orji, Theodore Vincent Vorburger, C V Nguyen
Abstract: Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot.  It has been widely used in photography, medical imaging, and computer vision and graphics. &n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823186

27. The Influence of Defects on the Morphology of Si (111) Etched in NHF
Published: 1/1/2005
Authors: Hui Zhou, Joseph Fu, Richard M Silver
Abstract: We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in ou ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823191

28. Traceable Pico-Meter Level Step Height Metrology
Published: 12/1/2004
Authors: Ndubuisi George Orji, Ronald G Dixson, Joseph Fu, Theodore Vincent Vorburger
Abstract: The atomic force microscope (AFM) increasingly being used as a metrology tool in the semiconductor industry where the features measured are at the nanometer level and continue to decrease. Usually the height sensors of the AFM are calibrated using st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822142

29. An Image Stitching Method to Eliminate the Distortion of the Sidewall in Linewidth Measurement
Published: 5/1/2004
Authors: Xuezeng Zhao, Joseph Fu, Wei Chu, C V Nguyen, Theodore Vincent Vorburger
Abstract: Nano-scale linewidth measurements are performed in semiconductor manufacturing, the data storage industry, and micro-mechanical engineering. It is well known that the interaction of probe and sample affects the measurement accuracy of linewidth measu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822153

30. Study on an Image Stitching Method for Linewidth Measurement
Published: 4/1/2004
Authors: Wei Chu, Xuezeng Zhao, Joseph Fu, Theodore Vincent Vorburger
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822240



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