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Author: tam duong
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1. Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs
Published: 7/1/2006
Authors: Tam Hoang Duong, Allen R Hefner Jr, David W. Berning
Abstract: Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32376

2. Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes
Published: 6/24/2010
Authors: Nanying Yang, Tam Hoang Duong, Jeong-O Jeong, Jose Miguel Ortiz, Allen R Hefner Jr, Kathleen Meehan
Abstract: This paper presents an automated parameter extraction software tool developed for constructing Silicon (Si) and Silicon Carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905858

3. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32831

4. Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications
Published: 3/10/2011
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose Miguel Ortiz, Eugene Imhoff, Jerry Sherbondy
Abstract: A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of bot ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907368

5. Electro-Thermal Simulation and Design of a 60 A, 4.5 kV Half-Bridge Si IGBT/SiC JBS Hybrid Power Module
Published: 9/15/2012
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the design of a high-current 4.5 kV half-bridge Si-IGBT/SiC-JBS hybrid module for medium voltage hard-switched power conversion as well as to compare th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911712

6. Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module
Published: 6/13/2008
Authors: Tam Hoang Duong, Jose Miguel Ortiz, R. N Raju, Allen R Hefner Jr
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II p ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33006

7. High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Published: 9/24/2009
Authors: Parrish Ralston, Tam Hoang Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R Hefner Jr, Kathleen Meehan
Abstract: Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903137

8. High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules
Published: 6/2/2008
Authors: David W. Berning, Tam Hoang Duong, Jose Miguel Ortiz, Angel Rivera, Allen R Hefner Jr
Abstract: A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33062

9. High-Voltage, High-Frequency SiC Power MOSFETs Model Validation
Published: 6/21/2007
Authors: Jose Miguel Ortiz, Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr
Abstract: Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32669

10. Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Published: 2/25/2007
Authors: Tam Hoang Duong, David Berning, Allen R Hefner Jr, Keyue M Smedley
Abstract: This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a singl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32547



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