NIST logo

Publications Portal

You searched on: Author: tam duong

Displaying records 11 to 16.
Resort by: Date / Title

11. High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules
Published: 6/2/2008
Authors: David Warren Berning, Tam Hoang Duong, Jose Miguel Ortiz, Angel Rivera, Allen R Hefner Jr.
Abstract: A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have ...

12. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr., Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...

13. High-Voltage, High-Frequency SiC Power MOSFETs Model Validation
Published: 6/21/2007
Authors: Jose Miguel Ortiz, Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr.
Abstract: Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script ...

14. Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Published: 2/25/2007
Authors: Tam Hoang Duong, David Berning, Allen R Hefner Jr., Keyue M Smedley
Abstract: This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a singl ...

15. Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device
Published: 10/1/2006
Authors: Allen R Hefner Jr., Ryu Sei-Hyung, Hull Brett, David Warren Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam Hoang Duong, Adwoa Akuffo, Madelaine Herminia Hernandez
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Powe ...

16. Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs
Published: 7/1/2006
Authors: Tam Hoang Duong, Allen R Hefner Jr., David Warren Berning
Abstract: Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provid ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series