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Author: tam duong

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11. Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Published: 2/25/2007
Authors: Tam Hoang Duong, David Berning, Allen R Hefner Jr, Keyue M Smedley
Abstract: This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a singl ...

12. Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device
Published: 10/1/2006
Authors: Allen R Hefner Jr, Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam Hoang Duong, Adwoa Akuffo, Madelaine Herminia Hernandez
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Powe ...

13. Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs
Published: 7/1/2006
Authors: Tam Hoang Duong, Allen R Hefner Jr, David W. Berning
Abstract: Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provid ...

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