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Author: tam duong

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11. Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Published: 2/25/2007
Authors: Tam Hoang Duong, David Berning, Allen R Hefner Jr, Keyue M Smedley
Abstract: This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a singl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32547

12. Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device
Published: 10/1/2006
Authors: Allen R Hefner Jr, Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam Hoang Duong, Adwoa Akuffo, Madelaine Herminia Hernandez
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Powe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32365

13. Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs
Published: 7/1/2006
Authors: Tam Hoang Duong, Allen R Hefner Jr, David W. Berning
Abstract: Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32376