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Author: ronald dixson

Displaying records 81 to 90 of 116 records.
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81. Toward Traceability for At-line AFM Dimensional Metrology
Published: 7/1/2003
Authors: Marylyn H. Bennett, Angela Guerry, Ronald G Dixson, Michael T Postek, Theodore Vincent Vorburger
Abstract: The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, ho ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821740

82. Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage
Published: 5/1/2003
Authors: N. Sullivan, Ronald G Dixson, B Bunday, M Mastovich, P Knutruda, P Fabre, R Brandoma
Abstract: Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total critical dimension (CD) uncertainty of up to 10 nm can arise from line slimming through a combination of the line sl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821976

83. Implementation of a Reference Measurement System Using CD-AFM
Published: 5/1/2003
Authors: Ronald G Dixson, Theodore Vincent Vorburger, Angela Guerry, Marylyn H. Bennett, B Bunday
Abstract: International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of tech ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821967

84. Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage
Published: 1/1/2002
Authors: N. Sullivan, M Mastovich, Ronald G Dixson, P Knutruda, B Bunday, P Febrea, R Brandoma
Abstract: Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists.  Total uncertainties, which approach 10 nm, can be realized through the combination of across wafer variation of line ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821957

85. Toward Traceability for At Line AFM Dimensional Metrology
Published: 1/1/2002
Authors: Ronald G Dixson, Angela Guerry, Marylyn H. Bennett, Theodore Vincent Vorburger, Michael T Postek
Abstract: The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability--below 1 nm in some cases. Accuracy, however, is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823148

86. Manufacturing of Prostheses
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6791
Published: 9/1/2001
Authors: Matthew A. Davies, Ronald G Dixson
Abstract: This paper is a summary of a workshop session during the Workshop on Biomedical Materials and Devices, held June 13 -14, 2001. The workshop is part of a series of workshops and topical meetings organized by NIST in the area of biomedical technology. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821858

87. Silicon Single Atom Steps as AFM Height Standards
Published: 8/1/2001
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore Vincent Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Abstract: Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821579

88. Atomic Level Surface Metrology
Published: 1/1/2001
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Jun-Feng Song, Thomas B Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger
Abstract: MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness ~ 0.1 nmSilicon gate oxides with thickness ~ 3 nm,rms roughness must be sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823146

89. Linewidth Intercomparison on a Polysilicon Sample
Published: 11/1/2000
Authors: John S Villarrubia, Andras Vladar, Michael T Postek, Ronald G Dixson
Abstract: Not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821574

90. Accurate Dimensional Metrology With Atomic Force Microscopy
Published: 6/1/2000
Authors: Ronald G Dixson, R Koning, Joseph Fu, Theodore Vincent Vorburger, Thomas B Renegar
Abstract: Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820959



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