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Author: ronald dixson

Displaying records 21 to 30 of 116 records.
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21. TSOM Method for Semiconductor Metrology
Published: 4/18/2011
Authors: Ravikiran Attota, Ronald G Dixson, John A Kramar, James Edward Potzick, Andras Vladar, Benjamin D. Bunday, Erik Novak, Andrew C. Rudack
Abstract: Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical microscopes; measurement sensitivities are comparable to what is typical using Scatterometry, SEM ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908177

22. Measurement Traceability and Quality Assurance in a Nanomanufacturing Environment
Published: 3/8/2011
Authors: Ndubuisi George Orji, Ronald G Dixson, Aaron Cordes, Benjamin Bunday, John Allgair
Abstract: A key requirement for nano-manufacturing is maintaining acceptable traceability of measurements performed to determine size. Given that properties and functionality at the nanoscale are governed by absolute size, maintaining the traceability of dimen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906853

23. Multi-laboratory Comparison of Traceable Atomic Force Microscope Measurements of 70 nm Grating Pitch
Published: 3/8/2011
Authors: Ronald G Dixson, Donald Chernoff, Shihua Wang, Theodore Vincent Vorburger, Siew-Leng Tan, Ndubuisi George Orji, Joseph Fu
Abstract: The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have completed a three-way interlaboratory ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906777

24. Scanning Probe Microscope Dimensional Metrology at NIST
Published: 12/21/2010
Authors: John A Kramar, Ronald G Dixson, Ndubuisi George Orji
Abstract: Scanning probe microscopy (SPM) dimensional metrology efforts at the U.S. National Institute of Standards and Technology are reviewed. The main SPM instruments for realizing the International System of Units (SI) are the Molecular Measuring Machine, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905420

25. Generalized ellipsometry of artificially designed line width roughness
Published: 12/10/2010
Authors: Martin Foldyna, Thomas Avery Germer, Brent Bergner, Ronald G Dixson
Abstract: We use azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line width roughness (LWR). We model the artificially perturbed grating using 1D and 2D rigorous ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906239

26. Nano- and Atom-scale Length Metrology
Published: 10/1/2010
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, Richard A Allen, Michael W Cresswell, Vincent A Hackley
Abstract: Measurements of length at the nano-scale have increasing importance in manufacturing, especially in the electronics and biomedical industries. The properties of linewidth and step height are critical to the function and specification of semiconducto ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906609

27. Interlaboratory Comparison of Traceable Atomic Force Microscope Pitch Measurements
Published: 6/14/2010
Authors: Ronald G Dixson, Donald Chernoff, Shihua Wang, Theodore Vincent Vorburger, Ndubuisi George Orji, Siew-Leng Tan, Joseph Fu
Abstract: The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have undertaken a three-way interlaborator ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905745

28. Calibration of 1 nm SiC Step Height Standards
Published: 3/31/2010
Authors: Theodore Vincent Vorburger, Albert M. Hilton, Ronald G Dixson, Ndubuisi George Orji, J. A. Powell, A. J. Trunek, P. G. Neudeck, P. B. Abel
Abstract: We aim to develop and calibrate a set of step height standards to meet the range of steps useful for nanotechnology. Of particular interest to this community is the calibration of atomic force microscopes operating at their highest levels of magnifi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905193

29. Proximity-associated errors in contour metrology
Published: 3/31/2010
Authors: John S Villarrubia, Ronald G Dixson, Andras Vladar
Abstract: In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a bright ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905141

30. Results of an international photomask linewidth comparison of NIST and PTB
Published: 10/9/2009
Authors: Bernd Bodermann, D Bergmann, Egbert Buhr, W Haebler-Grohne, Harald Bosse, James Edward Potzick, Ronald G Dixson, Richard Quintanilha, Michael T. Stocker, Andras Vladar, Ndubuisi George Orji
Abstract: In preparation of the international Nano1 linewidth comparison on photomasks between 9 national metrology institutes, NIST and PTB have started a bilateral linewidth comparison in 2008, independent of and prior to the Nano1 comparison in order to tes ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903776



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