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Displaying records 111 to 119.
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111. Pitch and Step Height Measurements Using NIST
Published: 1/1/1997
Authors: R Koning, Ronald G Dixson, Joseph Fu, V W. Tsai, Theodore Vincent Vorburger, Edwin Ross Williams, X Wang
Abstract: The use of the atomic force microscope (AFM) for step height and pitch measurements in industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be ...

112. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...

113. Toward Accurate Linewidth Metrology Using Atomic Force Microscopy and Tip Characterization
Published: 5/1/1996
Authors: Ronald G Dixson, J Schneir, T Mcwaid, N. Sullivan, V W. Tsai, S Zaidi, S Brueck
Abstract: As the critical dimensions of integrated circuit features decrease toward 0.18 um, feature width measurements with nanometer level accuracy will become increasingly important to the semiconductor processing industry. Atomic force microscopy (AFM) off ...

114. Height Calibration of Atomic Force Microscopes Using Silicon Atomic Step Artifacts
Published: 1/1/1996
Authors: V W. Tsai, Theodore Vincent Vorburger, P Sullivan, Ronald G Dixson, Richard M Silver, Edwin Ross Williams, J Schneir
Abstract: The decreasing feature dimensions required in the semiconductor manufacturing industry are placing ever increasing demands upon metrology instruments. Atomic force microscopes (AFMs), which can have ~1 nm lateral resolution and sub-angstrom vertical ...

115. Progress Towards Accurate Metrology Using Atomic Force Microscopy
Published: 1/1/1996
Authors: T Mcwaid, J Schneir, John S Villarrubia, Ronald G Dixson, V W. Tsai
Abstract: Accurate metrology using atomic force microscopy (AFM) requires accurate control of the tip position, an estimate of the tip geometry, and an understanding of the tip-surface interaction forces. We describe recent progress at NIST towards accurate AF ...

116. Toward Accurate Measurements of Pitch, Height, and Width Artifacts with the NIST Calibrated AFM
Published: 1/1/1996
Authors: Ronald G Dixson, Theodore Vincent Vorburger, P Sullivan, V W. Tsai, T Mcwaid
Abstract: Atomic force microscope (AFM) measurements are being used increasingly for metrological applications such as semiconductor process development and control. Common types of measurements are those of feature spacing (pitch), feature height (or depth), ...

117. Progress on Accurate Metrology of Pitch, Height, Roughness, and Width Artifacts Using an Atomic Force Microscope
Published: 5/1/1995
Authors: J Schneir, T Mcwaid, Ronald G Dixson, V W. Tsai, John S Villarrubia, Edwin Ross Williams, E Fu
Abstract: NIST personnel visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the needs identified. When complete, these ...

118. Increasing the Value of Atomic Force Microscopy Process Metrology Using a High-Accuracy Scanner, Tip Characterization, and Morphological Image Analysis
Published: 1/1/1995
Authors: J Schneir, John S Villarrubia, T Mcwaid, V W. Tsai, Ronald G Dixson
Abstract: Atomic force microscopes are being used increasingly for process metrology. As a case study, the measurement by atomic force microscope of a soda lime glass optical disk patterned using optical lithography and reactive plasma etching is examined. The ...

119. In Situ Tip Characterization for AFM and Application to Linewidth Metrology
Published: 1/1/1994
Authors: Ronald G Dixson, J Schneir, T Mcwaid, Theodore Vincent Vorburger
Abstract: Abstract not available.

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