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Author: ronald dixson
Displaying records 111 to 114.
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111. Toward Accurate Measurements of Pitch, Height, and Width Artifacts with the NIST Calibrated AFM
Ronald G Dixson, Theodore Vincent Vorburger, P Sullivan, V W. Tsai, T Mcwaid
Atomic force microscope (AFM) measurements are being used increasingly for metrological applications such as semiconductor process development and control. Common types of measurements are those of feature spacing (pitch), feature height (or depth), ...
112. Progress on Accurate Metrology of Pitch, Height, Roughness, and Width Artifacts Using an Atomic Force Microscope
J Schneir, T Mcwaid, Ronald G Dixson, V W. Tsai, John S Villarrubia, Edwin Ross Williams, E Fu
NIST personnel visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the needs identified. When complete, these ...
113. Increasing the Value of Atomic Force Microscopy Process Metrology Using a High-Accuracy Scanner, Tip Characterization, and Morphological Image Analysis
J Schneir, John S Villarrubia, T Mcwaid, V W. Tsai, Ronald G Dixson
Atomic force microscopes are being used increasingly for process metrology. As a case study, the measurement by atomic force microscope of a soda lime glass optical disk patterned using optical lithography and reactive plasma etching is examined. The ...
114. In Situ Tip Characterization for AFM and Application to Linewidth Metrology
Ronald G Dixson, J Schneir, T Mcwaid, Theodore Vincent Vorburger
Abstract not available.