NIST logo

Publications Portal

You searched on:
Author: ronald dixson

Displaying records 101 to 110 of 113 records.
Resort by: Date / Title


101. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST
Published: 1/1/1998
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, E. C. Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823099

102. Conformal Oxides on Si Surfaces
Published: 9/15/1997
Authors: V W. Tsai, S. Wang, E. C. Williams, J Schneir, Ronald G Dixson
Abstract: The characteristics of the Si-vacuum interface were compared with the characteristics of the oxide-air interface formed following room temperature oxidation for a variety of samples. Scanning tunneling microscopy was used to measure the surface struc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822524

103. Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6036
Published: 1/1/1997
Authors: Richard M Silver, J Land, Jack A Stone Jr, Ronald G Dixson, Bryon S. Faust, James Edward Potzick, Michael T Postek, et al
Abstract: A cross-section of measurements from the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against other leading National Measurement Institutes. We present a variety of length-related calibration ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820872

104. Finish and Figure Metrology for Soft X­ray Optics
Published: 1/1/1997
Authors: Theodore Vincent Vorburger, Christopher J. Evans, V W. Tsai, Joseph Fu, E. C. Williams, Ronald G Dixson, P Sullivan, T. McWaid
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901981

105. Pitch and Step Height Measurements Using NIST
Published: 1/1/1997
Authors: R Koning, Ronald G Dixson, Joseph Fu, V W. Tsai, Theodore Vincent Vorburger, Edwin Ross Williams, X Wang
Abstract: The use of the atomic force microscope (AFM) for step height and pitch measurements in industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820847

106. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820789

107. Toward Accurate Linewidth Metrology Using Atomic Force Microscopy and Tip Characterization
Published: 5/1/1996
Authors: Ronald G Dixson, J Schneir, T Mcwaid, N. Sullivan, V W. Tsai, S Zaidi, S Brueck
Abstract: As the critical dimensions of integrated circuit features decrease toward 0.18 um, feature width measurements with nanometer level accuracy will become increasingly important to the semiconductor processing industry. Atomic force microscopy (AFM) off ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820788

108. Height Calibration of Atomic Force Microscopes Using Silicon Atomic Step Artifacts
Published: 1/1/1996
Authors: V W. Tsai, Theodore Vincent Vorburger, P Sullivan, Ronald G Dixson, Richard M Silver, Edwin Ross Williams, J Schneir
Abstract: The decreasing feature dimensions required in the semiconductor manufacturing industry are placing ever increasing demands upon metrology instruments. Atomic force microscopes (AFMs), which can have ~1 nm lateral resolution and sub-angstrom vertical ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820827

109. Progress Towards Accurate Metrology Using Atomic Force Microscopy
Published: 1/1/1996
Authors: T Mcwaid, J Schneir, John S Villarrubia, Ronald G Dixson, V W. Tsai
Abstract: Accurate metrology using atomic force microscopy (AFM) requires accurate control of the tip position, an estimate of the tip geometry, and an understanding of the tip-surface interaction forces. We describe recent progress at NIST towards accurate AF ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820798

110. Toward Accurate Measurements of Pitch, Height, and Width Artifacts with the NIST Calibrated AFM
Published: 1/1/1996
Authors: Ronald G Dixson, Theodore Vincent Vorburger, P Sullivan, V W. Tsai, T Mcwaid
Abstract: Atomic force microscope (AFM) measurements are being used increasingly for metrological applications such as semiconductor process development and control. Common types of measurements are those of feature spacing (pitch), feature height (or depth), ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820790



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series