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Author: ronald dixson

Displaying records 101 to 110 of 116 records.
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101. Improving Step Height and Pitch Measurements Using the Calibrated Atomic Force Microscope
Published: 1/1/1998
Authors: R Koning, Ronald G Dixson, Joseph Fu, V W. Tsai, Theodore Vincent Vorburger
Abstract: The most important industrial application of Atomic Force Microscopy (AFM) is probably the accurate measurement of geometrical dimensions of small surface structures. In order to maintain the instrument''s performance and to achieve the high accuracy ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820898

102. Measurements of Pitch, Height, and Width Artifacts with the NIST Calibrated Atomic Force Microscope
Published: 1/1/1998
Authors: Ronald G Dixson, V W. Tsai, Theodore Vincent Vorburger, Edwin Ross Williams, X Wang, Joseph Fu, R Koning
Abstract: The presence of the atomic force microscope (AFM) in the industrial metrology setting is rapidly increasing. Properties commonly measured in such applications are: feature spacing (pitch), feature height (or depth), feature width (critical dimension) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820838

103. Performing Measurements of Surface Structures With the Calibrated Atomic Force Microscope
Published: 1/1/1998
Authors: R Koning, Ronald G Dixson, Joseph Fu, V W. Tsai, Theodore Vincent Vorburger
Abstract: The use of the atomic force microscope (AFM) to characterize surface structures for industrial applications is rapidly increasing.  To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823087

104. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST
Published: 1/1/1998
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, E. C. Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823099

105. Conformal Oxides on Si Surfaces
Published: 9/15/1997
Authors: V W. Tsai, S. Wang, E. C. Williams, J Schneir, Ronald G Dixson
Abstract: The characteristics of the Si-vacuum interface were compared with the characteristics of the oxide-air interface formed following room temperature oxidation for a variety of samples. Scanning tunneling microscopy was used to measure the surface struc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822524

106. Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6036
Published: 1/1/1997
Authors: Richard M Silver, J Land, Jack A Stone Jr, Ronald G Dixson, Bryon S. Faust, James Edward Potzick, Michael T Postek, et al
Abstract: A cross-section of measurements from the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against other leading National Measurement Institutes. We present a variety of length-related calibration ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820872

107. Finish and Figure Metrology for Soft X­ray Optics
Published: 1/1/1997
Authors: Theodore Vincent Vorburger, Christopher J. Evans, V W. Tsai, Joseph Fu, E. C. Williams, Ronald G Dixson, P Sullivan, T. McWaid
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901981

108. Pitch and Step Height Measurements Using NIST
Published: 1/1/1997
Authors: R Koning, Ronald G Dixson, Joseph Fu, V W. Tsai, Theodore Vincent Vorburger, Edwin Ross Williams, X Wang
Abstract: The use of the atomic force microscope (AFM) for step height and pitch measurements in industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820847

109. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820789

110. Toward Accurate Linewidth Metrology Using Atomic Force Microscopy and Tip Characterization
Published: 5/1/1996
Authors: Ronald G Dixson, J Schneir, T Mcwaid, N. Sullivan, V W. Tsai, S Zaidi, S Brueck
Abstract: As the critical dimensions of integrated circuit features decrease toward 0.18 um, feature width measurements with nanometer level accuracy will become increasingly important to the semiconductor processing industry. Atomic force microscopy (AFM) off ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820788



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