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You searched on: Author: john dagata

Displaying records 51 to 60 of 66 records.
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51. Photoreflectance Study of the Chemically Modified (100) GaAs Surface
Published: 5/1/1994
Authors: John A Dagata, O Glembocki, J Tuchman, K Ko, S Pang
Abstract: Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820732

52. Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Published: 2/1/1994
Authors: W. F. Tseng, John A Dagata, Richard M Silver, Joseph Fu, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13544

53. A New Workshop Summary Report: Industrial Applications of Scanned Probe Microscopy
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5550
Published: 1/1/1994
Authors: John A Dagata, A Diebold, C Shih, R Colton
Abstract: An Industrial Applications of Scanned Probe Microscopy (SPM) workshop was held at NIST Gaithersburg on March 24-25 1994. The meeting, co-sponsored by NIST, SEMATECH, ASTM E42.14, and the American Vacuum Society, was attended by over one hundred SPM u ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820677

54. TOF-SIMS Imaging of STM-Modified Semiconductor Surfaces
Published: 1/1/1994
Authors: J. Bennett, John A Dagata
Abstract: Not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820670

55. Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry
Published: 1/1/1994
Authors: J. Bennett, John A Dagata
Abstract: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10? ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820671

56. Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Published: 9/5/1993
Authors: H. W. Tseng, John A Dagata, Richard M Silver, Joseph Fu, J R. Lowney
Abstract: Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetric ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820723

57. Scanning Tunneling Microscopy of Passivated Gallium Arsenide Under Ambient Conditions
Published: 8/1/1993
Authors: John A Dagata, W. F. Tseng, Richard M Silver
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14568

58. Ambient Scanning Tunneling Spectroscopy of n- and p-type Gallium Arsenide
Published: 2/8/1993
Authors: John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=23669

59. Imaging of Passivated III-V Semiconductor Surfaces by a Scanning Tunneling Microscope Operating in Air
Published: 12/31/1992
Authors: John A Dagata, W. F. Tseng, J. Bennett, J. Schneir, Howard H. Harary
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15157

60. Integration of Scanning Tunneling Microscope Nanolithography and Electronics Device Processing
Published: 8/1/1992
Authors: John A Dagata, W. F. Tseng, J. Bennett, E. A. Dobisz, J. Schneir, Howard H. Harary
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22118



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