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You searched on: Author: john dagata

Displaying records 41 to 50 of 65 records.
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41. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678

42. Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultra High Vacuum
Published: 6/1/1995
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29181

43. Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum
Published: 5/1/1995
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunn ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820764

44. Device Fabrication by Scanned Probe Oxidation
Published: 1/1/1995
Author: John A Dagata
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820729

45. SPM-Based Lithography for Electronics Device Fabrication: New Strategies and Directions
Published: 1/1/1995
Author: John A Dagata
Abstract: Direct patterning of a semiconductor surface to produce an ultrathin oxide mask has proven to be a promising approach for integrating lithographic methods based on scanned probe microscopy (SPM) into existing electronics device processing. The result ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820730

46. Summary Report: Second Workshop in Industrial Applications of Scanned Probe Microscopy
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5752
Published: 1/1/1995
Authors: John A Dagata, A Diebold, C Shih, R Colton
Abstract: The Second Workshop on Industrial Applications of Scanned Probe Microscopy (IASPM) was held at the National Institute of Standards and Technology (NIST) Gaithersburg on May 2-3, 1995. The meeting, co-sponsored by NIST, SEMATECH, the American Society ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820731

47. Air and Vacuum STM/S of Bulk-Doped GaAs and pn Junctions
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=20047

48. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820713

49. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur- and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25904

50. Photoreflectance Study of the Chemically Modified (100) GaAs Surface
Published: 5/1/1994
Authors: John A Dagata, O Glembocki, J Tuchman, K Ko, S Pang
Abstract: Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820732



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