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You searched on: Author: john dagata

Displaying records 41 to 50 of 66 records.
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41. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820733

42. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678

43. Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultra High Vacuum
Published: 6/1/1995
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29181

44. Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum
Published: 5/1/1995
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunn ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820764

45. Device Fabrication by Scanned Probe Oxidation
Published: 1/1/1995
Author: John A Dagata
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820729

46. SPM-Based Lithography for Electronics Device Fabrication: New Strategies and Directions
Published: 1/1/1995
Author: John A Dagata
Abstract: Direct patterning of a semiconductor surface to produce an ultrathin oxide mask has proven to be a promising approach for integrating lithographic methods based on scanned probe microscopy (SPM) into existing electronics device processing. The result ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820730

47. Summary Report: Second Workshop in Industrial Applications of Scanned Probe Microscopy
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5752
Published: 1/1/1995
Authors: John A Dagata, A Diebold, C Shih, R Colton
Abstract: The Second Workshop on Industrial Applications of Scanned Probe Microscopy (IASPM) was held at the National Institute of Standards and Technology (NIST) Gaithersburg on May 2-3, 1995. The meeting, co-sponsored by NIST, SEMATECH, the American Society ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820731

48. Air and Vacuum STM/S of Bulk-Doped GaAs and pn Junctions
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=20047

49. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820713

50. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur- and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25904



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