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Author: robert cook
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1. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

2. Advanced Nanoscale Elastic Property Measurement by Contact-Resonance Atomic Force Microscopy
Published: 6/23/2010
Authors: Gheorghe Stan, Robert Francis Cook
Abstract: In atomic force microscopy (AFM)-based techniques, material information (topography, mechanical, electrical, magnetic, etc.) is retrieved from the nanoscale interaction between the AFM tip and the material probed. As the size of the apex of the AFM ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905459

3. Comparison of Nanoscale Measurements of Strain and Stress using Electron Back Scattered Diffraction and Confocal Raman Microscopy
Published: 12/12/2008
Authors: Mark D Vaudin, Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: Strains in Si as small as 104 (corresponding to stresses of 10 MPa) have been measured using electron back scatter diffraction (EBSD), with spatial resolution close to 10 nm, and confocal Raman microscopy (CRM) with spatial resolution app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854129

4. Compressive stress effect on the radial elastic modulus of oxidized Si nanowires
Published: 3/23/2010
Authors: Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert Francis Cook
Abstract: Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904727

5. Decoupling small-scale roughness and long-range features on deep reactive ion etched silicon surfaces
Published: 9/19/2013
Authors: Frank W DelRio, Lawrence H Friedman, Michael S. Gaither, William A Osborn, Robert Francis Cook
Abstract: Roughness scaling of three different deep reactive ion etched (DRIE) silicon surfaces is investigated using atomic force microscopy. At small distances, height-height correlations H reveal power-law behavior with equal scaling exponents for all surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913812

6. Deformation and fracture of single-crystal silicon theta-like specimens
Published: 10/28/2011
Authors: Michael S. Gaither, Frank W DelRio, Richard Swift Gates, Robert Francis Cook
Abstract: Miniaturized test specimens of single-crystal silicon, fabricated by lithography and deep reactive ion etching (DRIE), were used to measure deformation and fracture properties at the micro scale. Two specimen geometries, both in the form of a Greek l ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908887

7. Development of a Precision Nanoindentation Platform
Published: 7/18/2013
Authors: Douglas T Smith, Bartosz Karol Nowakowski, Robert Francis Cook, Stuart T Smith, Luis F Correa
Abstract: This paper presents the design, construction and performance of a surface- referenced nanoindentation instrument termed a precision nanoindentation platform (PNP). The PNP is a symmetrically designed instrument with a centrally located indenter tip a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912510

8. Diameter-Dependent Radial and Tangential Elastic Moduli of ZnO Nanowires
Published: 12/1/2007
Authors: Gheorghe Stan, C V Ciobanu, Prahalad M. Parthangal, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854419

9. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906105

10. Effect of crystallographic orientation on phase transformations during indentation of silicon
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854143



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