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1. Frequency Modulated Charge Pumping with Extremely High Gate Leakage
Published: 2/13/2015
Authors: Jason T Ryan, Jibin Zou, Jason P Campbell, Richard Southwick, Kin P Cheung, Anthony Oates, Rue Huang
Abstract: Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915883

2. Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Published: 12/13/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator pattern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916021

3. PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic
Published: 11/13/2014
Authors: Jiwu Lu, Canute Irwin Vaz, Guangfan Jiao, Jason P Campbell, Jason T Ryan, Kin P Cheung, Gennadi Bersuker, Chadwin D. Young
Abstract: Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915964

4. Impact of BTI on Random Logic Circuit Critical Timing
Published: 10/31/2014
Authors: Kin P Cheung, Jiwu Lu, Guangfan Jiao, Jason P Campbell, Jason T Ryan
Abstract: Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a ,permanentŠ degradation, there is a large recoverable degradation component [7] ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917272

5. Accurate Fast Capacitance Measurements for Reliable Device Characterization
Published: 7/1/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason P Campbell, Jason T Ryan, Helmut Baumgart
Abstract: As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915216

6. Energy Control Paradigm for Compliance-Free Reliable Operation of RRAM
Published: 6/5/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jihong Kim, Jason P Campbell, Kin P Cheung, Shweta Deora, G. Bersuker, Helmut Baumgart
Abstract: We demonstrate reliable RRAM operation by controlling the forming energy via short voltage pulses (picosecond range) which eliminates the need for a current compliance element. We further show that the dissipated energy during forming and SET/RESET p ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915820

7. Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress
Published: 6/1/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915921

8. Accurate RRAM Transient Currents during Forming
Published: 4/30/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Jihong Kim, Canute Irwin Vaz, Kin P Cheung, Helmut Baumgart
Abstract: Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915217

9. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

10. Dependence of the Filament Resistance on the Duration of Current Overshoot
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Kin P Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
Abstract: The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resist ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915215



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