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Author: kin cheung

Displaying records 31 to 40 of 61 records.
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31. Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
Published: 1/3/2011
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905955

32. The Role of High-Field Stress in the Negative Bias Temperature Instability
Published: 12/1/2010
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodol ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902186

33. Wafer-Level Magnetotransport Measurement of Advanced Transistors ‹ Making a Powerful Technique Even More Powerful
Published: 11/1/2010
Authors: Kin P Cheung, Jason P Campbell, Liangchun Yu
Abstract: For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility is extract ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908457

34. Defect depth profiling in gate dielectrics
Published: 9/29/2010
Author: Kin P Cheung
Abstract: Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of method ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906862

35. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/15/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: The engineering of channel mobility (μ) and series resistance (RSD) in advanced CMOS technologies are both extremely challenging and of paramount importance. Together, they determine the key metric of performance ON current. The reported scali ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907097

36. Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation
Published: 6/1/2010
Authors: Akin Akturk, M. Holloway, S. Potbhare, David J Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P Cheung
Abstract: We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907042

37. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/1/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extractio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905953

38. Frequency-Dependent Charge-Pumping: The Depth Question Revisited
Published: 5/1/2010
Authors: Fan Zhang, Kin P Cheung, Jason P Campbell, John S Suehle
Abstract: A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship betw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904997

39. On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published: 4/26/2010
Author: Kin P Cheung
Abstract: The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofs ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904995

40. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535



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