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Author: kin cheung

Displaying records 31 to 40 of 65 records.
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31. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

32. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

33. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

34. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

35. Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
Published: 1/3/2011
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905955

36. The Role of High-Field Stress in the Negative Bias Temperature Instability
Published: 12/1/2010
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodol ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902186

37. Wafer-Level Magnetotransport Measurement of Advanced Transistors ‹ Making a Powerful Technique Even More Powerful
Published: 11/1/2010
Authors: Kin P Cheung, Jason P Campbell, Liangchun Yu
Abstract: For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility is extract ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908457

38. Defect depth profiling in gate dielectrics
Published: 9/29/2010
Author: Kin P Cheung
Abstract: Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of method ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906862

39. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/15/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: The engineering of channel mobility (μ) and series resistance (RSD) in advanced CMOS technologies are both extremely challenging and of paramount importance. Together, they determine the key metric of performance ON current. The reported scali ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907097

40. Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation
Published: 6/1/2010
Authors: Akin Akturk, M. Holloway, S. Potbhare, David J Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P Cheung
Abstract: We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907042



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