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Author: kin cheung

Displaying records 11 to 20 of 65 records.
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11. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

12. SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS
Published: 1/31/2013
Authors: Jason P Campbell, Serghei Drozdov, Kin P Cheung, Richard G. Southwick, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913576

13. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute Irwin Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912998

14. On the Contribution of Bulk Defects on Charge Pumping Current
Published: 10/1/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency - ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911823

15. Physical Model for Random Telegraph Noise Amplitudes and Implications
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

16. Channel Length-Dependent Series Resistance?
Published: 6/10/2012
Authors: Jason P Campbell, Kin P Cheung, Serghei Drozdov, Richard G. Southwick, Jason T Ryan, Tony Oates, John S Suehle
Abstract: A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911515

17. Spectroscopic Charge Pumping in the Presence of High Densities of Bulk Dielectric Traps
Published: 5/31/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911208

18. High Speed Endurance and Switching Measurements for Memristive Switches
Published: 3/6/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Kin P Cheung, Jason P Campbell, Helmut Baumgart, Gary Harris
Abstract: Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910851

19. ITRS Chapter: Process Integration, Devices, and Structures
Published: 1/12/2012
Authors: Kwok Ng, Kin P Cheung
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910568

20. Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction
Published: 12/15/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young, John S Suehle
Abstract: We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implemen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911205



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