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Displaying records 11 to 20 of 73 records.
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11. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

12. Dependence of the Filament Resistance on the Duration of Current Overshoot
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Kin P Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
Abstract: The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resist ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915215

13. Fast-Capacitance for Advanced Device Characterization
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason T Ryan, Jason P Campbell, Helmut Baumgart
Abstract: Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as tr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914753

14. Unusual Bias Temperature Instability in SiC DMOSFET
Published: 3/3/2014
Authors: Zakariae Chbili, Kin P Cheung, Jason P Campbell, John S Suehle, D. E Ioannou, Aivars Lelis, Sei-Hyung Ryu
Abstract: We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914921

15. Quantifying short-lived events in multistate ionic current measurements
Published: 1/7/2014
Authors: Arvind Kumar Balijepalli, Jessica Hanna Benjamini, Andrew T Cornio, Joseph William Robertson, Kin P Cheung, John J Kasianowicz, Canute I. Vaz
Abstract: We developed a generalized technique to characterize polymer!nanopore interactions via single channel ionic current measurements. Physical interactions between analytes, such as DNA, proteins, or synthetic polymers, and a nanopore cause multiple di ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914512

16. Reliability Monitoring For Highly Leaky Devices
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

17. The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices
Published: 4/22/2013
Authors: Jason P Campbell, Kin P Cheung, Anthony Oates
Abstract: Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913416

18. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913574

19. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

20. SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS
Published: 1/31/2013
Authors: Jason P Campbell, Serghei Drozdov, Kin P Cheung, Richard G. Southwick, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913576



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