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Author: kin cheung

Displaying records 11 to 20 of 61 records.
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11. Physical Model for Random Telegraph Noise Amplitudes and Implications
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

12. Channel Length-Dependent Series Resistance?
Published: 6/10/2012
Authors: Jason P Campbell, Kin P Cheung, Serghei Drozdov, Richard G. Southwick, Jason T Ryan, Tony Oates, John S Suehle
Abstract: A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911515

13. Spectroscopic Charge Pumping in the Presence of High Densities of Bulk Dielectric Traps
Published: 5/31/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911208

14. High Speed Endurance and Switching Measurements for Memristive Switches
Published: 3/6/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Kin P Cheung, Jason P Campbell, Helmut Baumgart, Gary Harris
Abstract: Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910851

15. ITRS Chapter: Process Integration, Devices, and Structures
Published: 1/12/2012
Authors: Kwok Ng, Kin P Cheung
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910568

16. Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction
Published: 12/15/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young, John S Suehle
Abstract: We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implemen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911205

17. When Does a Circuit Really Fail?
Published: 12/15/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Tony Oates, Phillip Wong, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911206

18. TaOx Memristive Devices with Ferromagnetic Electrodes
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

19. On the ,U-ShapedŠ Continuum of Band Edge States at the Si/SiO2 Interface
Published: 12/1/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911207

20. High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch
Published: 10/8/2011
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Kin P Cheung, Jason P Campbell, Helmut Baumgart, Gary Harris
Abstract: Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909300



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