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You searched on: Author: kin cheung

Displaying records 11 to 20 of 74 records.
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11. Accurate RRAM Transient Currents during Forming
Published: 4/30/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Jihong Kim, Canute I. Vaz, Kin P Cheung, Helmut Baumgart
Abstract: Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance ...

12. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...

13. Dependence of the Filament Resistance on the Duration of Current Overshoot
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Kin P Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
Abstract: The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resist ...

14. Fast-Capacitance for Advanced Device Characterization
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason T Ryan, Jason P Campbell, Helmut Baumgart
Abstract: Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as tr ...

15. Unusual Bias Temperature Instability in SiC DMOSFET
Published: 3/3/2014
Authors: Zakariae Chbili, Kin P Cheung, Jason P Campbell, John S Suehle, D. E Ioannou, Aivars Lelis, Sei-Hyung Ryu
Abstract: We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.

16. Quantifying short-lived events in multistate ionic current measurements
Published: 1/7/2014
Authors: Arvind Kumar Balijepalli, Jessica Hanna Benjamini, Andrew T Cornio, Joseph William Robertson, Kin P Cheung, John J Kasianowicz, Canute I. Vaz
Abstract: We developed a generalized technique to characterize polymer!nanopore interactions via single channel ionic current measurements. Physical interactions between analytes, such as DNA, proteins, or synthetic polymers, and a nanopore cause multiple di ...

17. Reliability Monitoring For Highly Leaky Devices
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...

18. The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices
Published: 4/22/2013
Authors: Jason P Campbell, Kin P Cheung, Anthony Oates
Abstract: Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) a ...

19. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...

20. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...

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