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You searched on: Author: janet cassard

Displaying records 11 to 20 of 36 records.
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11. Status of the MEMS Standardization Project at NIST: March 2010
Published: 3/29/2010
Author: Janet M Cassard

12. Status of the Micro Nano Technology 5-in-1 Standard Reference Materials: November 2009
Published: 11/10/2009
Author: Janet M Cassard

13. Status of the MEMS Standardization Project at NIST: November 2009
Published: 11/2/2009
Author: Janet M Cassard

14. The Micro Nano Technology 5-in-1 Standard Reference Materials
Published: 10/12/2009
Author: Janet M Cassard

15. A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Published: 12/23/2008
Authors: Richard A Allen, Janet M Cassard, Winthrop A. Baylies, David Thomas Read, George David Quinn, Frank W DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract: A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the tes ...

16. The NIST MNT 5-in-1 Standard Reference Material for Measuring 5 Key Metrics
Published: 8/11/2008
Authors: Janet M Cassard, Jon C Geist, Michael Gaitan

17. Young's Modulus Measurements in Standard IC CMOS Processes using MEMS Test Structures
Published: 11/1/2007
Authors: Janet M Cassard, David L. Herman, Paul T. Vernier, Don DeVoe, Michael Gaitan
Abstract: This letter presents a method to measure the Young?s moduli of the individual thin film layers in a commercial integrated circuit (IC) foundry process. The method is based on measuring the resonance frequency of an array of micromachined cantilevers ...

18. Electro-physical Technique for Post-fabrication Measurements of CMOS Process Layer Thicknesses
Series: Journal of Research (NIST JRES)
Published: 10/1/2007
Authors: Janet M Cassard, Paul T. Vernier
Abstract: This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5-um complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty- ...

19. MEMS Length and Strain Round Robin Results with Uncertainty Analysis
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7291
Published: 2/1/2006
Authors: Janet M Cassard, Robert I. Scace, Winthrop A. Baylies
Abstract: A microelectromechanical systems (MEMS) Length and Strain Round Robin Experiment was completed in January 2005 to compare results of in-plane length measurements, residual strain measurements, and strain gradient measurements at a number of laborator ...

20. Round Robin for Standardization of MEMS Length and Strain Measurements
Published: 7/12/2004
Authors: Janet M Cassard, Erik M Secula, J Huang
Abstract: A microelectromechanical systems (MEMS) Length and Strain Round Robin is underway to compare results of in-plane length measurements, residual strain measurements, and strain gradient measurements at a number of laboratories. The goal of this round r ...

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