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Author: bryan barnes

Displaying records 21 to 30 of 34 records.
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21. Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope
Published: 4/1/2010
Authors: Richard Quintanilha, Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905308

22. The Limits and Extensibility of Optical Patterned Defect Inspection
Published: 4/1/2010
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Richard Quintanilha, Hui H. Zhou, Chris Deeb, Mark Johnson, Milton Goodwin, Dilip Patel
Abstract: New techniques recently developed at the National Institute of Standards and Technology using bright field optical tools are applied to signal-based defect analysis of features with dimensions well below the measurement wavelength. A key to this app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905318

23. Photomask metrology using a 193 nm scatterfield microscope
Published: 9/30/2009
Authors: Richard Quintanilha, Bryan M Barnes, Martin Y Sohn, Lowell P. Howard, Richard M Silver, James Edward Potzick, Michael T. Stocker
Abstract: The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903929

24. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903754

25. Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties
Published: 8/15/2009
Authors: Richard M Silver, Bryan M Barnes, Hui H. Zhou, Nien F Zhang, Ronald G Dixson
Abstract: This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902735

26. Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis
Published: 9/1/2008
Authors: Ravikiran Attota, Michael T. Stocker, Richard M Silver, Nathanael A Heckert, Hui H. Zhou, Richard J Kasica, Lei Chen, Ronald G Dixson, Ndubuisi George Orji, Bryan M Barnes, Peter Lipscomb
Abstract: In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902294

27. Optical Through-Focus Technique that Differentiates Small Changes in Line Width, Line Height and Sidewall Angle for CD, Overlay, and Defect Metrology Applications
Published: 4/16/2008
Authors: Ravikiran Attota, Richard M Silver, Bryan M Barnes
Abstract: We present a new optical technique for dimensional analysis of sub 100 nm sized targets by analyzing through-focus images obtained using a conventional bright-field optical microscope.  We present a method to create through-focus image maps (TFIM) us ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824634

28. Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy
Published: 1/2/2008
Authors: Heather J Patrick, Ravikiran Attota, Bryan M Barnes, Thomas Avery Germer, Michael T. Stocker, Richard M Silver, Michael R Bishop
Abstract: We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841060

29. Extending the Limits of Image-Based Optical Metrology
Published: 6/20/2007
Authors: Richard M Silver, Bryan M Barnes, Ravikiran Attota, Jay Shi Jun, Michael T. Stocker, Egon Marx, Heather J Patrick
Abstract: We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets. Previously we reported results from samples with sub-50 nm sized fea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823218

30. Zero-Order Imaging of Device-Sized Overlay Targets Using Scatterfield Microscopy
Published: 3/1/2007
Authors: Bryan M Barnes, Lowell P. Howard, P Lipscomb, Richard M Silver
Abstract: Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die.  The NIST Scatterfield Targets feature groupings of eight lines and/or tren ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823225



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