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You searched on: Author: bryan barnes

Displaying records 21 to 30 of 36 records.
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21. Nested Uncertainties and Hybrid Metrology to Improve Measurement Accuracy
Published: 4/18/2011
Authors: Richard M Silver, Nien F Zhang, Bryan M Barnes, Hui H. Zhou, Jing Qin, Ronald G Dixson
Abstract: In this paper we present a method to combine measurement techniques that reduce uncertainties and improve measurement throughput. The approach has immediate utility when performing model-based optical critical dimension measurements. When modeling ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908290

22. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931

23. Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope
Published: 4/1/2010
Authors: Richard Quintanilha, Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905308

24. The Limits and Extensibility of Optical Patterned Defect Inspection
Published: 4/1/2010
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Richard Quintanilha, Hui H. Zhou, Chris Deeb, Mark Johnson, Milton Goodwin, Dilip Patel
Abstract: New techniques recently developed at the National Institute of Standards and Technology using bright field optical tools are applied to signal-based defect analysis of features with dimensions well below the measurement wavelength. A key to this app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905318

25. Photomask metrology using a 193 nm scatterfield microscope
Published: 9/30/2009
Authors: Richard Quintanilha, Bryan M Barnes, Martin Y Sohn, Lowell P. Howard, Richard M Silver, James Edward Potzick, Michael T. Stocker
Abstract: The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903929

26. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903754

27. Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties
Published: 8/15/2009
Authors: Richard M Silver, Bryan M Barnes, Hui H. Zhou, Nien F Zhang, Ronald G Dixson
Abstract: This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902735

28. Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis
Published: 9/1/2008
Authors: Ravikiran Attota, Michael T. Stocker, Richard M Silver, Nathanael A Heckert, Hui H. Zhou, Richard J Kasica, Lei Chen, Ronald G Dixson, Ndubuisi George Orji, Bryan M Barnes, Peter Lipscomb
Abstract: In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902294

29. Optical Through-Focus Technique that Differentiates Small Changes in Line Width, Line Height and Sidewall Angle for CD, Overlay, and Defect Metrology Applications
Published: 4/16/2008
Authors: Ravikiran Attota, Richard M Silver, Bryan M Barnes
Abstract: We present a new optical technique for dimensional analysis of sub 100 nm sized targets by analyzing through-focus images obtained using a conventional bright-field optical microscope.  We present a method to create through-focus image maps (TFIM) us ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824634

30. Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy
Published: 1/2/2008
Authors: Heather J Patrick, Ravikiran Attota, Bryan M Barnes, Thomas Avery Germer, Michael T. Stocker, Richard M Silver, Michael R Bishop
Abstract: We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841060



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