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Author: bryan barnes

Displaying records 11 to 20 of 34 records.
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11. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

12. Multiple-order Imaging for Optical Critical Dimension Metrology using Microscope Characterization
Published: 10/11/2012
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Francois R. Goasmat, Ronald G Dixson, Richard M Silver
Abstract: There has been much recent work in developing advanced optical metrology applications that use imaging optics for optical critical dimension (OCD) measurements, defect detection, and for potential use with in-die metrology applications. We have previ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912169

13. Improving optical measurement uncertainty with combined multitool metrology using a Bayesian approach
Published: 8/30/2012
Authors: Nien F Zhang, Richard M Silver, Hui Zhou, Bryan M Barnes
Abstract: Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling optical measurements, a library of curves is assembled through the simul ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907847

14. Phase sensitive parametric optical metrology: Exploring the limits of 3-dimensional optical metrology
Published: 4/4/2012
Authors: Richard M Silver, Jing Qin, Bryan M Barnes, Hui Zhou, Ronald G Dixson, Francois R. Goasmat
Abstract: There has been much recent work in developing advanced optical metrology applications that use imaging optics for critical dimension measurements, defect detection and for potential use with in-die metrology applications. Sensitivity to nanometer sca ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911039

15. Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light
Published: 4/4/2012
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910963

16. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

17. A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy
Published: 7/31/2011
Authors: Richard M Silver, Nien F Zhang, Bryan M Barnes, Jing Qin, Hui Zhou, Ronald G Dixson
Abstract: We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different conf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908377

18. Optical illumination optimization for patterned defect inspection
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

19. Nested Uncertainties and Hybrid Metrology to Improve Measurement Accuracy
Published: 4/18/2011
Authors: Richard M Silver, Nien F Zhang, Bryan M Barnes, Hui Zhou, Jing Qin, Ronald G Dixson
Abstract: In this paper we present a method to combine measurement techniques that reduce uncertainties and improve measurement throughput. The approach has immediate utility when performing model-based optical critical dimension measurements. When modeling ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908290

20. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931



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