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You searched on: Author: bryan barnes

Displaying records 11 to 20 of 37 records.
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11. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

12. 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization
Published: 3/25/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield micr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912961

13. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

14. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

15. Multiple-order Imaging for Optical Critical Dimension Metrology using Microscope Characterization
Published: 10/11/2012
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Francois R. Goasmat, Ronald G Dixson, Richard M Silver
Abstract: There has been much recent work in developing advanced optical metrology applications that use imaging optics for optical critical dimension (OCD) measurements, defect detection, and for potential use with in-die metrology applications. We have previ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912169

16. Improving Optical Measurement Uncertainty with Combined Multitool Metrology Using a Bayesian Approach
Published: 8/30/2012
Authors: Nien F Zhang, Richard M Silver, Hui Zhou, Bryan M Barnes
Abstract: Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling optical measurements, a library of curves is assembled through the simul ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907847

17. Phase sensitive parametric optical metrology: Exploring the limits of 3-dimensional optical metrology
Published: 4/4/2012
Authors: Richard M Silver, Jing Qin, Bryan M Barnes, Hui Zhou, Ronald G Dixson, Francois R. Goasmat
Abstract: There has been much recent work in developing advanced optical metrology applications that use imaging optics for critical dimension measurements, defect detection and for potential use with in-die metrology applications. Sensitivity to nanometer sca ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911039

18. Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light
Published: 4/4/2012
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910963

19. Fundamental Limits of Optical Patterned Defect Metrology
Published: 11/14/2011
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou, Jing Qin
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has becom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908849

20. A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy
Published: 7/31/2011
Authors: Richard M Silver, Nien F Zhang, Bryan M Barnes, Jing Qin, Hui Zhou, Ronald G Dixson
Abstract: We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different conf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908377



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