Publications Portal

You searched on:
Author: richard allen

Displaying records 81 to 90 of 120 records.
Resort by: Date / Title

81. Characterization of Electrical Linewidth Test Structures Patterned in (100) Silicon-on-Insulator for Use as CD Standards
Published: 4/6/2000
Authors: Michael W Cresswell, Richard A Allen, Rathindra Ghoshtagore, Nadine Guillaume, Patrick J. Shea, Sarah C. Everist, Loren W. Linholm
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17080

82. A New Method to Measure the Distance Between Graduation Lines on Graduate Scales
Published: 12/1/1999
Authors: William B. Penzes, Richard A Allen, Michael W Cresswell, Loren W. Linholm, E Clayton Teague
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30330

83. Intercomparison of SEM, AFM, and Electrical Linewidths
Published: 9/1/1999
Authors: John S Villarrubia, R. Dixon, S. Jones, J R. Lowney, Michael T Postek, Richard A Allen, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22631

84. Analysis of Current Flow in Mono-Crystalline Electrical Linewidth Structures
Published: 6/1/1999
Authors: S Smith, I. A. Lindsay, Anthony Walton, Michael W Cresswell, Loren W. Linholm, Richard A Allen, M. Fallon, Alan Gundlach
Abstract: The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8877

85. Intercomparison of SEM, AFM, and Electrical Linewidths
Published: 6/1/1999
Authors: John S Villarrubia, Ronald G Dixson, Samuel N Jones, J R. Lowney, Michael T Postek, Richard A Allen, Michael W Cresswell
Abstract: Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820954

86. Comparison of Sheet-Resistance Measurements Obtained By Standard and Small-Area Four-Point Probing
Published: 5/1/1999
Authors: Nadine Guillaume, Michael W Cresswell, Richard A Allen, Sarah C. Everist, Loren W. Linholm
Abstract: A modification of the standard four-point probing technique has been developed for measuring the sheet resistance of conducting films. Although the areas of unpatterned film that are required by the new modified technique are significantly less then ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5777

87. Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non- Planar Geometries
Published: 5/1/1999
Authors: Michael W Cresswell, Nadine Guillaume, Richard A Allen, William F Guthrie, Rathindra Ghoshtagore, James C. OwenI, Z. Osborne, N. Sullivan, Loren W. Linholm
Abstract: This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14902

88. Sheet and Line Resistance of Patterned SOI Surface Film CD Reference Materials as a Function of Substrate Bias
Published: 4/1/1999
Authors: Richard A Allen, Eric M. Vogel, Loren W. Linholm, Michael W Cresswell
Abstract: Recently, NIST has been developing electrical test structures to serve as a critical dimension (CD) reference artifacts for calibrating CD metrology systems. The reference artifacts are fabricated in monocrystalline silicon-on-insulator films and are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24743

89. Comparison of Properties of Electrical Test Structures Patterned in BESOI and DIMOX Films for CD Reference-Material Applications
Published: 12/31/1998
Authors: Richard A Allen, Rathindra Ghoshtagore, Michael W Cresswell, Loren W. Linholm
Abstract: The National Institute of Standards and Technology is exploring the feasibility of using artifacts fabricated on silicon-on-insulator materials (SOI) to quantify methods divergence, for critical dimension metrology applications. Test structures, pat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17998

90. Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference Materials Applications
Published: 12/31/1998
Authors: Richard A Allen, Rathindra Ghoshtagore
Abstract: Monocrystalline silicon test structures are being investigated for critical dimension (CD) reference materials applications. The goal of this work is to produce samples which do not exhibit the phenomenon of methods divergence, where the measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19784