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You searched on: Author: richard allen

Displaying records 31 to 40 of 126 records.
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31. A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Published: 12/23/2008
Authors: Richard A Allen, Janet M Cassard, Winthrop A. Baylies, David Thomas Read, George David Quinn, Frank W DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract: A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the tes ...

32. 2nd Annual Tri-National Workshop on Standards for Nanotechnology - (NIST presentations)
Published: 12/10/2008
Authors: Ronald G Dixson, Jon Robert Pratt, Vincent A Hackley, James Edward Potzick, Richard A Allen, Ndubuisi George Orji, Michael T Postek, Herbert S Bennett, Theodore Vincent Vorburger, Jeffrey A Fagan, Robert L. Watters
Abstract: A new era of cooperation between North American National Measurement Institutes (NMIs) was ushered by the National Research Council of Canada Institute for National Measurement Standards (NRC-INMS) on February 7, 2007 when the first Tri-National wo ...

33. Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms
Published: 11/3/2008
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, Stewart Smith, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Richard A Allen, Michael W. Cresswell
Abstract: Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no ...

34. Comparison of Measurement Techniques for Advanced Photomask Metrology
Published: 3/24/2008
Authors: Stewart Smith, Martin McCallum, Andrew Hourd, J. Tom Stevenson, Anthony J Walton, Ronald G Dixson, Richard A Allen, James Edward Potzick, Michael W. Cresswell, Ndubuisi George Orji

35. Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm
Published: 1/1/2008
Authors: Michael W. Cresswell, Richard A Allen, William F Guthrie, Christine E. Murabito, Ronald G Dixson, Amy Hunt
Abstract: CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm a ...

36. Nano- and Atomic-Scale Length Metrology
Published: 12/14/2007
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C Feng, Michael W. Cresswell, Richard A Allen, William F Guthrie, Wei Chu

37. Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines
Published: 12/7/2007
Authors: Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A Allen, Michael W. Cresswell
Abstract: This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimat ...

38. Photomask Applications of Traceable Atomic Force Microscope Dimensional Metrology at NIST
Published: 10/1/2007
Authors: Ronald G Dixson, Ndubuisi George Orji, James Edward Potzick, Joseph Fu, Michael W. Cresswell, Richard A Allen, S J Smith, Anthony J Walton
Abstract: The National Institute of Standards and Technology (NIST) has a multifaceted program in AFM dimensional metrology.  Two major instruments are being used for traceable measurements.  The first is a custom in-house metrology AFM, called the c ...

39. CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications
Published: 9/30/2007
Authors: Richard A Allen, Ronald G Dixson, Michael W. Cresswell, William Gutherie, Byron J Shulver, Andrew S Bunting, J. Tom Stevenson, Anthony Walton
Abstract: Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 1 ...

40. Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications
Published: 9/30/2007
Authors: Heather Patrick, Thomas Avery Germer, Michael W. Cresswell, Richard A Allen, Ronald G Dixson, Michael Bishop

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