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Author: richard allen

Displaying records 31 to 40 of 124 records.
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31. Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms
Published: 11/3/2008
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, Stewart Smith, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Richard A Allen, Michael W Cresswell
Abstract: Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32758

32. Comparison of Measurement Techniques for Advanced Photomask Metrology
Published: 3/24/2008
Authors: Stewart Smith, Martin McCallum, Andrew Hourd, J. Tom Stevenson, Anthony J Walton, Ronald G Dixson, Richard A Allen, James Edward Potzick, Michael W Cresswell, Ndubuisi George Orji
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904605

33. Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm
Published: 1/1/2008
Authors: Michael W Cresswell, Richard A Allen, William F Guthrie, Christine E. Murabito, Ronald G Dixson, Amy Hunt
Abstract: CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32240

34. Nano- and Atomic-Scale Length Metrology
Published: 12/14/2007
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C Feng, Michael W Cresswell, Richard A Allen, William F Guthrie, Wei Chu
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824603

35. Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines
Published: 12/7/2007
Authors: Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A Allen, Michael W Cresswell
Abstract: This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32747

36. Photomask Applications of Traceable Atomic Force Microscope Dimensional Metrology at NIST
Published: 10/1/2007
Authors: Ronald G Dixson, Ndubuisi George Orji, James Edward Potzick, Joseph Fu, Michael W Cresswell, Richard A Allen, S J Smith, Anthony J Walton
Abstract: The National Institute of Standards and Technology (NIST) has a multifaceted program in AFM dimensional metrology.  Two major instruments are being used for traceable measurements.  The first is a custom in-house metrology AFM, called the c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823242

37. CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications
Published: 9/30/2007
Authors: Richard A Allen, Ronald G Dixson, Michael W Cresswell, William Gutherie, Byron J Shulver, Andrew S Bunting, J. Tom Stevenson, Anthony Walton
Abstract: Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 1 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32654

38. Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications
Published: 9/30/2007
Authors: Heather Patrick, Thomas Avery Germer, Michael W Cresswell, Richard A Allen, Ronald G Dixson, Michael Bishop
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32756

39. Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications
Published: 5/7/2007
Authors: Heather J Patrick, Thomas Avery Germer, Michael W Cresswell, Richard A Allen, Ronald G Dixson, Michael R Bishop
Abstract: We use an optical critical dimension technique, matching modeled to measured scatterometry signatures, to obtain critical dimension linewidth on grating targets fabricated using the single-crystal critical dimension reference materials process. The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841085

40. Single Crystal Critical Dimension Reference Materials (SCCDRM): Process Optimization for the Next Generation of Standards
Published: 4/5/2007
Authors: Ronald G Dixson, William F Guthrie, Michael W Cresswell, Richard A Allen, Ndubuisi George Orji
Abstract: Critical dimension atomic force microscopes (CD-AFMs) are rapidly gaining acceptance in semiconductor manufacturing metrology.  These instruments offer non-destructive three dimensional imaging of structures and can provide a valuable complement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823219



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