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You searched on: Author: richard allen

Displaying records 91 to 100 of 126 records.
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91. Intercomparison of SEM, AFM, and Electrical Linewidths
Published: 6/1/1999
Authors: John S Villarrubia, Ronald G Dixson, Samuel N Jones, J R. Lowney, Michael T Postek, Richard A Allen, Michael W. Cresswell
Abstract: Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820954

92. Comparison of Sheet-Resistance Measurements Obtained By Standard and Small-Area Four-Point Probing
Published: 5/1/1999
Authors: Nadine Guillaume, Michael W. Cresswell, Richard A Allen, Sarah C. Everist, Loren W. Linholm
Abstract: A modification of the standard four-point probing technique has been developed for measuring the sheet resistance of conducting films. Although the areas of unpatterned film that are required by the new modified technique are significantly less then ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5777

93. Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries
Published: 5/1/1999
Authors: Michael W. Cresswell, Nadine Guillaume, Richard A Allen, William F Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm
Abstract: This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14902

94. Sheet and Line Resistance of Patterned SOI Surface Film CD Reference Materials as a Function of Substrate Bias
Published: 4/1/1999
Authors: Richard A Allen, Eric M. Vogel, Loren W. Linholm, Michael W. Cresswell
Abstract: Recently, NIST has been developing electrical test structures to serve as a critical dimension (CD) reference artifacts for calibrating CD metrology systems. The reference artifacts are fabricated in monocrystalline silicon-on-insulator films and are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24743

95. Comparison of Properties of Electrical Test Structures Patterned in BESOI and DIMOX Films for CD Reference-Material Applications
Published: 12/31/1998
Authors: Richard A Allen, Rathindra Ghoshtagore, Michael W. Cresswell, Loren W. Linholm
Abstract: The National Institute of Standards and Technology is exploring the feasibility of using artifacts fabricated on silicon-on-insulator materials (SOI) to quantify methods divergence, for critical dimension metrology applications. Test structures, pat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17998

96. Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference Materials Applications
Published: 12/31/1998
Authors: Richard A Allen, Rathindra Ghoshtagore
Abstract: Monocrystalline silicon test structures are being investigated for critical dimension (CD) reference materials applications. The goal of this work is to produce samples which do not exhibit the phenomenon of methods divergence, where the measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=19784

97. Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries
Published: 12/31/1998
Authors: Michael W. Cresswell, Nadine Guillaume, Richard A Allen, William F Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm
Abstract: This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28180

98. Electrical Linewidth Test Structures Fabricated in Mono-Crystalline Films for Reference-Material Applications
Published: 5/1/1998
Authors: Michael W. Cresswell, Richard A Allen, William F Guthrie, Rathindra Ghoshtagore, Loren W. Linholm, J. J. Sniegowski
Abstract: The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of mono-crystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are pattern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18597

99. Temperature Dependence of the Modulation of Electrical Llinewidth of Single-Crystal Critical Dimension Artifacts
Published: 3/1/1998
Authors: Richard A Allen, O. Oyebanjo, Michael W. Cresswell, Loren W. Linholm
Abstract: Single-crystal critical dimension (CD) test structures for reference material applications, with features defined using lattice-plane selective etching, are under development at NIST. The materials are intended to eliminate methods divergence betwee ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18188

100. Electrical Linewidth Test Structures Fabricated in Mono-Crystalline Films for Reference Material Applications
Published: 12/31/1997
Authors: Michael W. Cresswell, J. J. Sniegowski, Rathindra Ghoshtagore, Richard A Allen, William F Guthrie, Loren W. Linholm
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=7227



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