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Semiconductor Electronics: Advanced MOS Device Reliability and Characterization Electrical Test Structure Metrology Electronic Materials Characterization Integrated Infrastructure for Electronics Design and Manufacturing Metrology for System-on-a-Chip Microelectromechanical Systems (MEMS) Nanoelectronic Devise Metrology Power Device and Thermal Metrology
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Division Contact: David G. Seiler Advanced MOS Device Reliability and Characterization Our goals in this project are to provide an understanding of the electrical and reliability characterization methodologies required for ultra-thin SiO2 and alternate gate dielectrics for advanced CMOS technologies; provide standards, techniques, and data for the comparison and development of alternate gate dielectrics fabricated throughout the research community; and increase the understanding of wear-out mechanisms, device breakdown, and the relationship between the gate dielectric material/interface and device electrical measurements. Contact: John S. Suehle Electrical Test Structure Metrology Our purpose will be to: (1) develop and disseminate thoroughly evaluated and physically correct test-structure-based metrology tools and procedures that can be used by the semiconductor community as a common base for communicating and exchanging technical data and analysis for characterizing advanced multilevel interconnection systems and (2) develop and evaluate test-structure-based electrical metrology methods and related reference materials with primary emphasis on linewidth metrology and instrument calibration. This effort will be to address key metrology issues in which we can have maximum impact in areas of interconnect characterization and lithography calibration based on our resources, experience, and skill set. Contact: Michael W. Cresswell Electronic Materials Characterization The goal of this project is to develop measurement methodologies, theoretical models, software and fundamental understanding required for the characterization of select electronic materials. Our emphasis is on starting materials, thin films, dopants, and materials for future devices. We have specific expertise in scanned probe (e.g. SCM) and optical measurements (e.g., ellipsometry). Contact: Joseph Kopanski Integrated Infrastructure for Electronics Design and Manufacturing The IIEDM (Infrastructure for Integrated Electronics Design & Manufacturing) project contributes actively to the technical development of neutral product data exchange specifications and component information infrastructure for the electronics industry. The project has two primary focus areas: Electronic Commerce of Component Information (ECCI) and Internet Commerce for Manufacturing (ICM). These programs can provide an impartial forum to resolve conflicts among competing and conflicting standardization efforts within the electronics industry. ECCI staff continue to work with industry and other government laboratories to develop a program to promote the transfer of technical information and computer models between the manufactures of electronic parts and those who need parts for the design, manufacture, and repair of electronic systems. The ICM focus provides an environment in which small manufactures of mechanical and electronic components may participate competitively in virtual enterprises that manufacture printed circuit assemblies. In particular, this project will identify and overcome some of the manufacturing information technology problems that exist at the intersection of manufacturing and electronic commerce. Contacts: John Messina and Kevin Brady Metrology for System-on-a-Chip Contact: Allen Hefner Microelectromechanical Systems (MEMS) The goals of this project are to provide domestic industry with MEMS-based test structures and standardized test methods for characterizing the thermoelectromechanical properties of thin films used in IC and MEMS technologies; work with IC foundries to develop infrastructure for improved accessibility of MEMS manufacturing; and research and develop new integrated measurement systems that develop novel metrology applications of MEMS technology for the new nanobiotechnology tasks in single molecule probes (ATP) and single molecule manipulation and measurement (SM3). Contact: Michael Gaitan Nanoelectronic Device Metrology (NEDM) The overall goal of the NEDM Project is to develop the metrology that will help enable new nanotechnologies (such as molecular electronics and Si-based quantum devices) to supplement and/or supplant conventional complementary metal oxide semiconductor (CMOS) devices. This involves determining the critical metrology needs for these exploratory technologies. One specific goal is to develop test structures and methods to measure reliably the electrical properties of small ensembles of molecules. A second targeted goal is to develop the precise metrology and characterization methods required for the systematic characterization of Si-based nanoelectronic devices. Contact: Curt A. Richter Power Device and Thermal Metrology Our goal is to develop and evaluate the electrical and thermal metrology required for the efficient and reliable application of advanced power semiconductor devices and the thermal metrology required for the development and application of advanced microelectronic devices. Contact: David L. Blackburn
Date
created:November
8, 2001 |