Research Facilities
Electromagnetic Anechoic Chamber
The Electronic Kilogram Facility
Integrated Circuit Fabrication Laboratory
Magnetic Thin-Film Fabrication Laboratory
Microfabrication Process Facility
Mobile Transient Reception/Transmission Systems
Near-Field Scanning Facilities for Antenna Measurements
Pulsed Inductive Microwave Magnetometer Facility
Scanned Probe Microscopy Laboratory
Superconductor Characterization Laboratory
Time-Domain Electromagnetic Field Facility
Transverse Electromagnetic Cell
Ultralow-Temperature Electronics Facilities
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Research Facilities
Always consult the staff identified for information on status and availability. See our website for the most up-to-date technical information.
The Electronic Kilogram Facility
The equivalence of electrical and mechanical power provides a convenient route to the measurement of mass in terms of other quantum mechanically defined measurement units. The apparatus at our electronic kilogram facility is a balance that compares both kinds of power in a virtual measurement that is unaffected by the dissipative forces of friction and electromagnetic heating. The experimental observables are length, time, voltage, and resistance. We measure these quantities with respect to fundamental and invariant quantum phenomena: atomic clocks, laser wavelengths, the Josephson effect, and the quantum Hall effect, respectively.
Capabilities: The goal is to establish long-term stability of alignment, data acquisition, and reference standards for the repeatability of watt data at an uncertainty of 0.1 ppm. Further optimization of the system will permit regular monitoring of the kilogram at an uncertainty of 0.01 ppm.
Contact: Michael H. Kelley
The ability to control electrons one-by-one in single electron tunneling (SET) devices offers promise for several valuable metrological applications such as a current standard based on controlled pumping of single electron charges, an electron-counting capacitance standard (ECCS) where a known number of electrons are deposited on the electrodes of a very small capacitor, and quantum computing whereby charge based "qubits" are used as the binary logic representation. The SET lab is studying the feasibility principles and fabrication techniques for realizing these applications with 1) the development of cryogenic capacitors, 2) the fabrication processes necessary to make simple, easy-to-fabricate SET transistors, and 3) the reduction of long-term drift in the charge offset of SET devices.
Capabilities: Studies can be performed of the detailed device characteristics and behavior of single-electron transistors and related devices. This facility has capability of measurements at temperatures down to 0.02 K and at magnetic fields up to 5 Tesla. The insensitivity to electromagnetic interference is excellent, as demonstrated by the ease of measurement of single-cooper pair transistors.
Applications: Interactions are under way with the Electromagnetic Technology Division on the ECCS using electron pump technology, which has the potential of serving as a quantum-based representation of the farad. Ongoing collaborations with NTT in Japan on Si-based SET devices that exhibit negligible charge offset drift could realize integration of a large number of such devices in parallel to produce a large value quantum-based current standard.
Contact: Michael H. Kelley
The U.S. legal system of electrical units is tied to the International System of Units with smaller uncertainties than those of any other nation and provides the United States with a very solid basis for the measurement of electrical quantities. The central facility is the NIST calculable capacitor, with which the measurement of capacitance is effectively achieved through a measurement of length. Both the calculable capacitor and the chain of high precision measurements that transfers the SI unit to the calibration laboratories must be maintained and improved. We also conduct international comparisons with other national metrology laboratories to ensure measurement consistency.
Capabilities: This facility provides the realization of the farad at both 1000 and 1592 Hz, traceable to the SI meter, at uncertainty levels of parts in 108.
Applications: Measurements made in this lab link the calculable capacitor to the quantum Hall resistance representation of the ohm. Traceability is provided for the NIST calibration services for impedance (capacitance and inductance).Availability: By special arrangements only.
Contact: Gerald
J. Fitzpatrick
Well-defined methods for specifying and verifying display quality are necessary to enable worldwide commerce of electronic displays. In the Flat-Panel Display Lab, we are developing methods for characterizing the components of reflection (Lambertian, specular, and haze) associated with displays. The refinement of measurement procedures is being pursued in support of display metrology and the application of these to national and international standards for characterizing flat panel displays.
Capabilities: The Display Measurement Assessment Transfer Standard (DMATS) is a portable unit that is available for determining unambiguous color measurements in round-robin testing. A narrow-frustum stray light elimination tube (SLET) apparatus can be used to minimize the effects of stray light in making small-area measurements on displays, particularly important in rendering high-contrast detail.
Applications: This work has led to the second public version of the VESA Flat Panel Display Measurements Standard (FPDM2). DMATS and SLET capabilities are being used to determine the readability of automotive displays under high ambient light conditions.
Availability: By
special arrangements only.
Contact: Kevin
G. Brady
Microfabrication Process Facility
As integrated circuit (IC) sizes increase to more than one square centimeter and feature sizes within the circuits decrease to less than 1 micrometer, critical demands are placed on the measurement capability required to control and monitor IC fabrication successfully. To meet the demand, we are developing state-of-the-art measurement procedures for microelectronics manufacturing.
The Microfabrication Process Facility provides a quality physical environment for a variety of research projects in semiconductor microelectronics as well as in other areas of physics, chemistry, and materials research. The laboratory facilities are used for projects addressing many areas of semiconductor materials and processes, including process control and metrology, materials characterization, and the use of integrated circuit materials and processes for novel applications.
The laboratory complex occupies about 5,200 square feet, approximately half of which is composed of Class 1000 clean room space. Within the clean room, work areas are maintained at class 30. The facility is designed so the work areas can be modified easily to accommodate frequent equipment and other changes required by research.
Capabilities: The facility has a complete capability for IC fabrication. Principal processing and analytical equipment is listed below.
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The newest additions to the Microfabrication Facility are two dedicated thin-film deposition and etch systems for R&D applications. The plasma enhanced chemical vapor deposition system (PECVD) can provide low temperature (< 300 C) thin film dielectrics like SiO2, SixNx, and SiON. The other platform is set up as a plasma etching tool, capable of providing anisotropic and isotropic etching of dielectrics, thin films and other materials used in the semiconductor fabrication industry. |
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The NIST Microfabrication Facility offers a mask aligner with backside alignment capability and is also wafer to wafer bonding upgradeable. This photolithographic tool can provide resolution in the sub-micron regime (0.35-0.75 micron) for G-line and I-line exposures. With its 1000 watt lamp, processing can be performed using thick resist with full field exposure. This tool is flexible enough to handle small samples (6-25 mm) up to 6-inch wafers. |
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A surface profilometer is utilized for determining the stress and/or topology of a thermally applied film or etched surface. This system is a contact stylus type with the capability to resolve features as large as 2mm with the extended range option beneficial for MEMS and Microfluidics research. Step heights of an etched feature can be measured with the sensitivity below 10 Angstroms. This model includes a 6.5" stage and 50mm scans with up to 8000 data points. The system uses Windows software and has a color video monitor with video capture. |
Applications: We can produce small quantities of specialized semiconductor test specimens, experimental samples, prototype devices, and processed materials. The processes and processing equipment can be monitored during operation to study the process chemistry and physics. The effects of variations in operating conditions and process gases and chemical purities can be investigated. Research is performed under well-controlled conditions. A research-oriented facility, the laboratory is not designed to produce large-scale ICs or similar complex structures. Rather, the laboratory emphasizes breadth and flexibility to support a wide variety of projects.
Our current research projects address many aspects of microelectronic processing steps and materials as well as silicon micromachining. Examples include: metal-oxide-semiconductor measurements; metal-semiconductor-specific contact resistivity; uniformity of resistivity, ion-implanted dopant density, surface potential, and interface state density; characterization of deposited insulating films on silicon carbide; ionization and activation of ion-implanted species in semiconductors as a function of annealing temperature; electrical techniques for dopant profiling and leakage current measurements; and processing effects on silicon-on-insulator materials. A simple CMOS process has been established. Recent work has also begun in the field of molecular electronics.
Availability: We welcome collaborative research projects consistent with the research goals of the NIST semiconductor program. Work is performed in cooperation with the technical staff of the laboratory.
The most productive arrangements begin with development of a research plan with specific goals. The commitment of knowledgeable researchers to work closely with our staff and the provision of equipment and other needed resources are required. Because hazardous materials are present, laboratory staff must supervise all research activities.
Contacts: Russell
Hajdaj, Eric
Vogel
The NIST Wafer Probing Laboratory provides the capability for automated dc probing of test devices on up to 200-millimeter wafers. The system consists of a state-of-the-art commercial parameter analysis test system upgraded with a nanovolt digital multimeter controlled by a workstation. A computer-controlled 200-millimeter wafer prober allows for fast wafer mapping of devices. A switching matrix allows for the use of up to 36 independent connections. These may go either directly to a probe card for wafer probing or, through use of adapter boards, directly to packaged parts. Currently, the laboratory is used primarily in the development and evaluation of test structures for very large-scale integration for metrology applications. The system also is capable of measuring the dc characteristics of devices such as transistors. Additional equipment in the laboratory includes a 125-millimeter manual wafer probe station and inspection microscopes. This facility is available in support of collaborative research with NIST.
Contact: Richard
A. Allen
We have designed and constructed reverberation chambers to measure radiated electromagnetic (EM) emission, immunity of electronic equipment, and shielding effectiveness of materials and cable/connector assemblies. A reverberation or mode-stirred chamber is an electrically large (in terms of wavelength), high-quality cavity whose boundary conditions are varied by means of a rotating conductive tuner.
Capabilities: The mode-stirred chamber simulates far-field conditions for tests at frequencies from 200 megahertz to 40 gigahertz. Equipment as large as 1.5 meters by 2.0 meters by 3.0 meters can be tested in high-level test fields up to 1000 volts per meter.
Applications: The range of reverberation chamber tests includes:
- radiated emission and radiated immunity testing,
- high field level testing (> 200 MHz),
- shielding effectiveness of materials (e.g., advanced composites),
- shielding effectiveness of gasketing, cables, printed circuit boards, and connectors, and
- biological effects.
Availability: Two
chambers are available. NIST staff are available for collaborative programs
or to advise and interpret measurement results.
Contact: Galen
Koepke
The ground-screen antenna range is an open-area electromagnetic field test site.
Capabilities: The ground screen consists of 6.35-millimeter mesh galvanized hardware cloth stretched over a level concrete slab. There is a center section of 20-meter-by-30-meter stainless-steel sheets. The screen is 30.5 meters by 61 meters and permits far-field measurements in the high-frequency portion of the spectrum. The mesh dimension provides for an efficient ground plane well into the ultrahigh frequency part of the electromagnetic spectrum.
Applications: The range can be used for the following applications:
- antenna calibrations,
- antenna patterns at any polarization,
- electromagnetic immunity measurements,
- electromagnetic radiated emission measurements,
- calibration of field intensity meters, and
- wave propagation
studies.
Availability: This
facility is used heavily in performing calibrations for industry and other
governmental agencies. It is available for independent or collaborative
work.
Contact: Dennis Camell
Transverse Electromagnetic Cell
A transverse electromagnetic (TEM) cell is an enclosure for performing radiated electromagnetic emission and susceptibility measurements of electronic equipment. Its design is based on the concept of an expanded transmission line operated in the TEM mode.
Capabilities: A TEM cell provides a shielded environment for testing without introducing multiple reflections experienced with the conventional shielded enclosure. It simulates very closely a planar far field in free space and has constant amplitude and linear phase characteristics. TEM cell usage is typically limited by the appearance of higher-order modes. Thus, a TEM cell is typically used for small test objects.
Applications: TEM cell tests include:
- radiated emission and radiated immunity tests,
- probe and antenna calibration, and
- biological effects.
Availability:
TEM cells with five different sizes and five upper frequency limits in
the 100 megahertz to 1 gigahertz frequency range are available. In collaborative
programs, we are available to advise and interpret measurement results.
Independent testing also can be arranged.
Contact: Perry
Wilson
Electromagnetic Anechoic Chamber
The electromagnetic (EM) anechoic chamber at NIST is a facility for generating standard, well-characterized electromagnetic fields. Such fields are fundamental to the research, development, and evaluation of antennas, field probes, and EM material properties.
Capabilities: EM fields up to 100 volts per meter can be established in the chamber over the broad frequency range from 200 megahertz to 40 gigahertz and up to 200 volts per meter for certain bands above one gigahertz. A majority of the individual components are computer-controlled, including a robotic positioner, thus enhancing statistical control of the measurements. The chamber measures 8.5 meters by 6.7 meters by 4.9 meters.
Applications: The EM chamber is used in areas such as:
- research, development, and evaluation of new EM-field-generation and measurement methods;
- calibration of field measurement instruments;
- immunity testing of electronic equipment;
- shielding effectiveness and material parameter studies; and
- special tests for industry, government agencies, and universities.
Availability: This
facility is used heavily in performing calibrations for industry and other
governmental agencies. It is available for independent or collaborative
work with NIST.
Contact: Dennis
Camell
Time-Domain Electromagnetic Field Facility
This facility is designed to generate and transmit standard transient fields. The system consists of a 7.5-meter square ground plane and a 4-meter conical transmitter. The input signal is transmitted as a well-defined spherically expanding wave that can be used to evaluate the impulse response of electromagnetic probes and sensors.
Capabilities: The transmit capabilities are primarily limited by the output spectrum and amplitude of the input signal source. In-house sources allow measurements of frequency components between 50 megahertz and 10 gigahertz, and field levels of up to 100 volts per meter. The transmitted wave is known to an accuracy of ± 1 decibel.
Applications: The primary uses for this facility include:
- calibration of broadband probes and sensors;
- characterization of ultrawideband devices;
- shielding effectiveness of large structures, materials, and cavities; and
- immunity of devices to transient electromagnetic fields.
Availability: This facility is available for calibration of broadband devices. Other applications are possible on a limited basis. Tests requiring higher frequencies or field levels are possible with special arrangements.
Contact: Robert
Johnk
Mobile Transient Reception/Transmission Systems
Several broadband antennas are available for transmission and reception of transient signals. By combining these antennas, broadband transient generators, high-speed transient digitizers, and sophisticated signal processing, a variety of measurements are possible.
Capabilities: The capabilities are related closely to the desired application. With existing antennas, it is possible to transmit transient signals with spectral components from 25 megahertz up to 14 gigahertz and field amplitudes of greater than 200 volts per meter. Receiving antennas have similar frequency restrictions and sensitivities determined by the receiving equipment. Sensitivities of better than 500 volts per meter are typical.
Applications: Test applications include:
- in-situ shielding effectiveness measurements on large test objects (e.g., autos, aircraft);
- non-invasive evaluation of the electrical properties of materials;
- reflectivity of dissipative macrostructures (e.g., RF absorber, ferrite tiles);
- evaluation of reverberation chamber and anechoic chamber performance; and
- electrostatic discharge radiated fields.
Availability: This system is readily available for interesting applications. Higher frequencies, amplitudes, and greater sensitivities are possible but require fabrication of special antennas.
Contact: Robert
Johnk
Near-Field Scanning Facilities for Antenna Measurements
These automated facilities are designed to measure the near-zone phase and amplitude distributions of the fields radiated from an antenna test. Mathematical transformations are used to calculate the desired antenna characteristics.
Capabilities: Near-field data can be obtained over planar, cylindrical, and spherical surfaces; the planar technique is the most popular. Efficient computer programs are available for processing the large quantities of data required. When operated in the planar mode, the facility is capable of measuring over a 4.5-meter-square area with probe position errors of less than ± 0.01 centimeter. Improved position accuracy is possible with further alignment, especially over smaller areas. Antennas with apertures up to about 3 meters in diameter can be measured with a single scan. The facility has been used successfully over the frequency range 750 megahertz to 75 gigahertz. It incorporates provisions for scanning larger antennas in segments.
Applications: Primary applications include:
- antenna characteristics,
- antenna diagnostics, and
- probe calibrations.
Antenna Characteristics: The facility is used primarily for determining the gain, pattern, and polarization of antennas. Accuracies are typically ± 0.15 decibel for absolute gain and ± 0.10 decibel/decibel for polarization axial ratio. Patterns can be obtained down to the -50 decibels to -60 decibels levels with side lobe accuracy typically about ± 1.0 decibel at the 40 decibel level. (The exact uncertainties depend on the frequency, type, size of antenna, and other factors.) Near-field data also can be used to compute near-field interactions (such as mutual coupling) of antennas and radiated field distributions in the near zone.
Antenna Diagnostics. Near-field scanning is also a valuable tool for identifying problems and for achieving optimal performance of various types of antenna systems. It has been used to advantage in locating faulty elements in phased-array antennas and for adjusting feed systems to obtain the proper illumination function at the main reflector. Phase contour plots of the near-field data also can be used to determine surface imperfections in reflectors used for antennas or compact ranges.
Probe Calibrations. A spherical probe calibration facility serves as a far-field range for measuring the receiving characteristics of probes used to obtain near-field data. These measurements are required to determine the probe coefficients, which, in turn, are used to calculate accurate, probe-corrected, far-field gain and pattern characteristics of an antenna.
Availability: Two kinds of arrangements can be made to use this facility. NIST staff can perform specified tests or measurements on a reimbursable basis. In this case, the customer has no direct use of the facility; all measurements are performed by NIST staff, and the customer is issued a test report. As an alternative, work may be performed on a cooperative basis with NIST staff. This arrangement permits the user the advantage of developing firsthand knowledge of the measurement processes, and the user is responsible in large part for the accuracy of test results. In either case, arrangements need to be made well in advance, and reimbursement is required for the facility use and time of NIST staff involved.
Contact: Katherine
MacReynolds
Integrated Circuit Fabrication Laboratory
NIST maintains a complete fabrication laboratory for superconducting integrated circuits. Devices employing both low- and high-temperature superconductors are supported. Demonstrated capabilities include the fabrication of 32,000-junction Josephson 10-volt array standards using niobium trilayer technology. The laboratory is housed in an M2.5/3.5 (Class 100/1000) clean room. Individual facilities include a digital pattern generator, submicrometer waferstepper, precision contact aligner, laboratory-scale electron-beam lithography system, pulsed laser deposition system, metal and insulator thin-film deposition and etching systems, and requisite accompanying processing tools. Silicon wafer processing facilities for microelectromechanical system (MEMS) fabrication include furnaces for oxidations, diffusion, silicon nitride growth, polysilicon growth, and low-temperature doped oxide growth. Etching tools for MEMS work include a XeF2 system and a special deep reactive ion etcher capable of etching deep trenches with vertical walls. These facilities are available on a limited basis in support of collaborative research with NIST.
Contact: James
A. Beall
Ultralow-Temperature Electronics Facilities
Two He3/He4 dilution refrigerators provide an approximately 20 mK low-temperature environment for ultrasensitive measurement systems. The facilities are shielded from external radiation, which can adversely affect the extremely sensitive electronic devices under test. Projects using these systems include integrated circuits incorporating ultrasmall metal tunneling junctions for counting single electrons, development of a Cooper pair charge pump, and demonstration of novel concepts for quantum computing.
In addition, seven adiabatic demagnetization refrigerators, reaching temperatures as low at 50 mK, are used for record-setting X-ray detectors having superior energy resolution and speed compared with any other detector, large imaging arrays of these detectors, and for a portable single electron tunneling capacitance standard.
Contact: Richard
E. Harris
We use magnetoresistive sensors and arrays to image damaged or partially
erased magnetic recording tape and magnetic fields from currents in integrated
circuits.
Contact: David Pappas
Pulsed Inductive Microwave Magnetometer Facility
The Pulsed Inductive Microwave Magnetometer (PIMM) is one of three instruments
of its kind in the world. The inductive coupling between a magnetic film
and a coplanar waveguide is used to make quantitative measurements of
the film's magnetization dynamics. In contrast to typical measurements
of high frequency permeability, we have been able to extend the excitation
range well beyond the limit imposed by spin-wave instabilities. This has
allowed us to determine the dynamic parameters under conditions approaching
saturation of the magnetization response, not unlike what commonly occurs
in magnetic recording heads under normal operating conditions.
Contacts: Thomas Silva or Anthony Kos
Scanned Probe Microscopy Laboratory
Instruments in the laboratory include a scanning tunneling microscope,
a magnetic force microscope, and a magnetic resonance force microscope.
We are developing ultrasensitive magnetometers based on micro-electromechanical
systems (MEMS) for incorporation into film deposition systems.
Contact: John Moreland
Magnetic Thin-Film Fabrication Laboratory
In our laboratory we vacuum deposit layered magnetic thin films—including
materials that exhibit giant magnetoresistance—by sputtering, thermal
evaporation, and laser ablation. We make specialized magnetic devices,
such as magnetoresistive spin-valves, and measure their switching dynamics.
We fabricate experimental structures for spintronics.
Contact: Stephen Russek
The laboratory has several instruments for magnetic characterization,
including a superconducting quantum interference device (SQUID) magnetometer
(0-7 T, 2-400 K, 0-5000 Hz), a vibrating sample magnetometer (VSM) (0-1
T, 300 K), an alternating gradient field magnetometer (AGM) (0-1 T, 300
K), and induction-field (B-H) looper (0-0.1 T, 10-1000 Hz, 300 K), an
ac demagnetizer, a magneto-optical Kerr effect (MOKE) magnetometer, and
a second-harmonic magneto-optical Kerr effect (SH-MOKE) magnetometer.
Contact: Ron Goldfarb
Superconductor Characterization Laboratory
We are able to measure critical current as a function of field and temperature,
residual resistivity ratio, ac losses, and electromechanical properties—including
the effect of stress on critical current-of low-temperature and high-temperature
superconductors.
Contacts: Loren Goodrich or Jack Ekin
Date
created:November
8, 2001
Last modified:
Aug. 02, 2007
Contact: inquiries@nist.gov