Microscope Opens View of Nanoworld |
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| NIST researchers have produced quantitative images of dopant densities in semiconductor circuits with 20 to 30 nanometer (billionths of a meter) resolution. The achievement brings the industry closer to meeting a key requirement of the National Technology Roadmap for Semiconductors for producing next-generation microcircuits by the year 2000. The colorized graphic shows data collected as a scanning capacitance microscope tip rastered acrosss a p/n junction, a common semiconductor structure. Blue and purple areas indicate areas in the junction with low concentrations of the dopant phosphorus, while yellow/green areas have higher concentrations of the dopant boron. |
| Technology at a Glance (Fall 1995) newsletter article on NIST's SCM |
| Materials Technology Group |
| Semiconductor Electronics Division |
| Electronics and Electrical Engineering Laboratory |
| NIST Image Gallery |