Moiré Method Reveals the Strain
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| NIST researchers are working
with several U.S. companies to develop better ways to detect and model strain in
components used to connect integrated circuits within multichip devices. One promising
method is electron beam moiré. The technique provides a way to image strained areas so
that the design of interconnections can be improved. The left graphic shows a copper
connection (red lines) surrounded by a polymer before it was heated. The right graphic
shows the same connection after heating. The dark blue/black horizontal lines are fringes.
Areas with the shortest distance between fringes have expanded the most and consequently
are under the most strain. |
| Technology
at a Glance (Winter 1996) newsletter article on Electron Beam Moiré |
| Experimental
Micromechanics by e-Beam Moire |
| Materials Reliability Division
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| Materials Science and Engineering
Laboratory |
| NIST Image Gallery |
