NIST logo

Light-matter interactions in Semiconductor Nanostructures


The quantum optics of light interacting with semiconductor-based nanostructures is being studied to extend concepts of entanglement and coherence in atomic physics to solid-state systems such as quantum dots and defect centers.


We investigate the interaction of light with semiconductor-based nanostructures. We extend concepts of entanglement and coherence in atomic physics to our solid-state systems. Our devices are based on semiconductors, like GaAs. We use InAs quantum dots (QDs) in GaAs as artificial atoms; they have discrete, atomic-like states with strong optical transitions, yet contains tens of thousands of atoms. Optical microcavities are monolithically fabricated to investigate cavity quantum electrodynamics (cavity QED). We make the semiconductor material using molecular-beam epitaxy (MBE), fabricate microstructures using the NIST CNST nanofab, and concentrate our efforts making optical measurements. Nearby experimental collaborators are John Lawall’s team here at NIST and Edo Waks’ group at the Joint Quantum Institute.

Research topics include:

*Near-resonant single QD scattering

*Strong and weak coupling cavity QED

*Single-state QD lasing

*Single and entangled discrete photon sources


Start Date:

October 19, 2010

Lead Organizational Unit:


For Technical Inquiries:

Glenn Solomon, NIST Staff
100 Bureau Drive, M/S 8423
Bldg 217/ A225
Gaithersburg, MD 20899

301-975-3225 Telephone
301-975-5485 Facsimile
Edward Flagg, Guest Researcher
Paulina Kuo, Guest Researcher