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Nanoelectronic Device Metrology


The Nanoelectronic Device Metrology (NEDM) project is developing the measurement science infrastructure that will enable emerging “Beyond-CMOS” nanoelectronic information processing technologies – including those based upon new computational state variables – to more rapidly enter into the marketplace.

Christina Hacker characterizes the individual monolayers prior to flip-chip lamination using a Fourier transform spectrometer.
Christina Hacker characterizes the individual monolayers prior to flip-chip lamination using a Fourier transform infrared spectrometer.


The semiconductor industry is a major driver of the modern economy and has accounted for a large portion of the productivity gains that have characterized the global economy since the 1990’s. In order for the semiconductor industry to maintain its position as one of the principle drivers of U.S. economic productivity, it requires the continuous development of ever faster computer chips offering greater functionality at a lower cost. These performance increases have traditionally been based upon scaling complementary metal oxide semiconductor (CMOS) devices, to ever smaller dimensions. Unfortunately, scaling is reaching fundamental limits. The grand challenge facing the semiconductor industry is to integrate new nm-scale materials and new nanoelectronic “switches” to extend the performance improvements associated with Moore’s law. To solve this challenge, the ITRS roadmap points to nanowires, carbon nanotubes, graphene, and molecular/organic electronics as promising new materials for use in moving beyond
CMOS. Additionally, a new circuit element, the memristor has emerged as a possible technology that can be integrated with CMOS or used individually to enable an entirely new paradigm in computing. Innovative measurement approaches are needed to continue technological advances.

The NEDM will develop the required measurement infrastructure and scientific knowledge-base to address technology barriers and enable the successful development and subsequent manufacture of next-generation “Beyond CMOS technologies.”

Major Accomplishments:

  • Voltage Controlled Spin-Valve
    • NEDM developed a novel spin-transport-based measurement method for metal-oxide switching devices.
  • Improved Molecular Contacts
    • Electrical contacts to organic monolayers improved by better understanding of Flip Chip Lamination.
  • Large Area Graphene Substrates
    • Graphene Transfer Improved to Create Higher-Quality Large-Area Graphene Substrates.
Richter (left) and Jang (right) measuring the spin-valve effect of a device.
<b><i>Richter (left) and Jang (right) measuring the spin-valve effect of a device.</i></b>

End Date:


Lead Organizational Unit:



Christina Hacker, Leader
Oleg Kirillov
Joseph Kopanski
Sujitra Pookpanratana
Curt Richter


Christina Hacker
301-975-2082 Telephone

100 Bureau Drive, M/S 8120
Gaithersburg, MD 20899