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Nanoelectronic Device Metrology


The Nanoelectronic Device Metrology (NEDM) project is developing the measurement science infrastructure that will enable emerging nanoelectronic information processing technologies – including those based upon new computational state variables – to more rapidly enter into the marketplace.

Christina Hacker characterizes the individual monolayers prior to flip-chip lamination using a Fourier transform spectrometer.
Christina Hacker characterizes the individual monolayers prior to flip-chip lamination using a Fourier transform infrared spectrometer.


The Nanoelectronic Device Metrology project conducts research to develop and advance the measurements needed to understand and evaluate properties of promising nanoelectronic technologies. This involves pioneering research in the area of molecular interfaces, condensed matter physics, alternate means of computing, and confined structures (graphene, 2D materials, nanowires, etc.). Particular emphasis is placed on novel measurements of chemical, physical, and electrical properties to fully interrogate nanoelectronic systems and provide the measurement foundation for advanced manufacturing of innovative future nanoelectronic devices. Core competencies include developing surface, electrical, and magnetic characterization approaches to accelerate the development and characterization of advanced nanoelectronic devices.

The NEDM project focuses on understanding the factors that govern charge transport in nanoelectronic devices. To do this, team members focus on novel measurement approaches such as investigating electronic devices at low-temperature or in the presence of a magnetic field. This work is an integral component to the condensed matter physics foundation needed for novel electronic materials (e.g. graphene) and alternate means of computing (e.g. spin) to become a manufactural reality.

The NEDM project has extensive expertise in molecular electronics foundations including the formation and characterization of molecular layers and fabrication and qualification of electrode-molecule-electrode junctions which feed into to a fundamental understanding of charge transport at molecular interfaces. This work has led to many technological advances on the nanoscale and has recently been applied to fabricate and understand the physics governing novel organic spintronic devices.

The NEDM aims to develop the required measurement infrastructure and scientific knowledge-base to address technology barriers and enable the successful development and subsequent manufacture of next-generation "Beyond CMOS technologies." To do this, the NEDM project supplements our core expertise with collaborations within the nanoelectronics group, across NIST, and with external technical leaders to conduct timely, impactful research.

Major Accomplishments:

  • Engineered Molecular Interfaces:
    • Surface-based click chemistry has been developed as a viable means of engineering functionality into molecular layers.
  • 2D Materials Substrates:
    • A range of new device materials (eg. graphene, Bi2Se3, MoS2) and structures (nanowires, topological insulators, etc) are studied as part of the NanoElectronic Device Metrology
  • Organic Spin (OMAR):
    • Interface engineering to control magnetic field effects of organic-based devices by using a molecular self-assembled monolayer shows promise for use in novel organic spintronic devices
Richter (left) and Jang (right) measuring the spin-valve effect of a device.
Richter (left) and Jang (right) measuring the spin-valve effect of a device.

End Date:


Lead Organizational Unit:



Christina Hacker, Project Leader
Oleg Kirillov
Joseph Kopanski
Sujitra Pookpanratana
Curt Richter


Christina Hacker
301-975-2082 Telephone

100 Bureau Drive, M/S 8120
Gaithersburg, MD 20899