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To fabricate and measure solid state implementations of manufacturable atomically precise devices. Build the infrastructure to fabricate prototype few-atom structures in isotopically pure Si and characterize them using new, unique metrology capabilities. Our goal is to fabricate few-atom devices that display transistor operation or that can operate as coherent qubits, and to provide the metrology and understanding needed by US industry.
To realize atomically precise devices we have vertically integrated a program from design and fabrication through electrical characterization, device operation and state-of-the-art atomistic modeling. The key enabling fabrication technology is hydrogen-based scanning probe lithography that allows deterministic placement of individual dopant atoms in the Si lattice. We pattern Si at the atomic scale and are implementing atomically aligned mask and etch processes, providing a method for fabricating atomically precise 3-D structures. Using recently developed NIST enriched 28Si processing we will fabricate quantum devices in an isotopically pure Si environment redefining solid-state, electron coherence times. We are implementing the fabrication infrastructure necessary to manufacture prototypical few-atom devices in a controlled solid-state environment and building the measurement framework necessary to fully characterize these devices. We are developing the fundamental theories and models needed to understand these devices at the atomic scale and the basic relationship between the atomic arrangement and final device performance.
Figure 1. An STM image to show three vertical lines patterned by a STM. The distance between any two lines can be determined by counting the number of atoms separating lines.
Lead Organizational Unit:pml
Physical Measurement Laboratory (PML)