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FCMN Confirmed Speakers

The following people have agreed to present invited talks at the 2011 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics. This list is subject to change.

  • Phaedon Avouris, IBM, “Carbon Based Nanoelectronics, including CNT and Graphene Based Devices”
  • David Awschalom, University of California, “Spin-State Metrology”
  • Sara Bals, Antwerp University, “Discrete Tomography in Materials Science”
  • Michel Brillouet, CEA/LETI, “Nanocharacterization Challenges in a Changing Microelectronics Landscape”
  • Rudi Cartuyvels, IMEC, “Overview of Nanoelectronics and Moore than Moore at IMEC”
  • David Cooper, CEA LETI, “State-of-the-art TEM for the Semiconductor Industry (and the added value of using an aberration corrector)”
  • Peter De Wolf, Veeco, “SPM-Microscopy for Nanoelectronics”
  • Alain Diebold, University of Albany, “ITRS Review in Relation to Future Metrology Needs”
  • Stefan Dilhaire, CNRS-CPMOH, “Thermal Properties Characterization of Advanced Materials for Nanoelectronics”
  • Norbert Fabricius, Karlsruher Institut für Technologie (KIT), “Measurements and Standards to Characterize More than Moore Applications of Electronics: Perspectives from KIT and IEC”
  • Johann Foucher, CEA/LETI/MINATEC, “3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements”
  • Jean-Daniel Ganiere, EPFL, “Time Resolved Cathodoluminescence”
  • Mike Garner, Intel, “Beyond CMOS Measurement Needs”
  • Mart Graef, Delft Univ., “Positioning More Than Moore Characterization Needs and Methods Within the 2011 ITRS”
  • Ude Hangen, Hysitron, “Nanomechanical Characterization and Metrology for Low-k / ULK Materials”
  • G. Dan Hutcheson, VLSI Research, Inc., “More than Moore or More Moore: a SWOT Analysis”
  • David Joy, University of Tennessee, “Scanning He Ion Beam Microscopy”
  • Vimal Kamineni, College of Nanoscale Science and Engineering, University at Albany, “Overview of Optical Metrology of Advanced Semiconductor Materials”
  • Toshihiko Kanayama, National Institute of Advanced Industrial Science and Technology, “Strain Analysis in Scaled Si Transistors by Simulation-Hybrid UV Raman Microscopy”
  • T.P. Ma, Yale, “Inelastic Electron Tunneling Spectroscopy for Measuring Microscopic Bonding Structures, Impurities, and Traps”
  • Udo Nothelfer, Globalfoundries, Topic TBD
  • Bryan Rice, SEMATECH, “EUV Mask Metrology and Overview”
  • Timo Sajavaara, University of Jyväskylä, “Quantitative High-resolution Depth Profiling of Light and Heavy Elements with Low-energy High-resolution ERDA”
  • Sadas Shankar, Intel, “Materials Modeling and Metrology”
  • Ahmed Shariq, Fraunhofer Center for Nanoelectronic Technologies, “Atom Probe Tomography of Semiconducting Materials”
  • Richard Silver, NIST, “Fundamental Limits of Optical Defect Metrology”
  • Noel Smith, Oregon Physics, “Metrology for 3D Devices: Plasma-based FIB for High-throughput Sectioning of Large Dimensions”
  • Wolf Staud, Applied Materials, Inc., “Wafer Inspection for Sub 20 nm Patterning”
  • Joseph Stroscio, NIST, “A Novel SPM System for Determining the Quantum Electrical Structure of Nanometer-scale Systems such as Graphene”
  • Valeriy Sukharev, Mentor Graphics, “Stress-induced Effects caused by 3D IC TSV Packaging on Advanced Semiconductor Processes”
  • Brad Thiel, University at Albany - SUNY, “Advances in CD-Metrology (CD-SAXS, Muller Matrix based Scatterometry, and SEM)”
  • Wilfried Vandervorst, IMEC, “Metrology at IMEC: a Center of Excellence Enabling Fundamental Understanding of Process and Materials Development”
  • Wen-li Wu, NIST, "Line Edge Roughness of Directed Self Assembled PS-PMMA Block Copolymers – A Candidate for Future Lithography"
  • Ehrenfried Zschech, Fraunhofer IZFP Dresden, “Metrology for 3D IC Integration (including TSV)”