2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Program

Monday, May 11

1:00 PM - 5:00 PM

Short Course

High Resolution X-ray Scattering Methods for Nanostructure Characterization and Metrology

(Additional Fee)

6:30 PM

Reception with registration at the Hilton Garden Inn

Tuesday, May 12

7:30 AM

Registration/Attendee Check-in, Coffee

Conference Opening

8:45 AM

Conference Opening
David Seiler, NIST, Conference Chair

Session 1:  Keynote Talks

Session Chair:  Robert Doering, Texas Instruments

9:00 AM

Research Challenges for CMOS Scaling: Industry Directions
T.C. Chen, IBM

9:45 AM

Enabling Technologies for Sub 20 nm Generations
Hans Stork, AMAT

10:30 AM

Coffee Break and Poster Viewing

11:00 AM

Nanoelectronics Landscape in Europe: New Opportunities for Research and Innovation
Gisele Roesems-Kerremans, European Commission, Information Society and Media / Nanoelectronics

11:45 AM

Globalized Innovation in Electronics - The 4th Factor of Production: Innovation
Dan Hutcheson, VLSI Research, Inc.

12:30 PM

Lunch and Poster Viewing

Session 2:  Technology Overview for Nanoelectronics and Metrology

Session Chair:  C.Y. Sung, IBM T.J. Watson Research Center

1:50 PM

Overview of the Nanoelectronics Research Initiative: An Industry-Government-University Innovation Partnership
Jeffrey Welser, Director, SRC Nanoelectronics Research Initiative

2:20 PM

Metrology for Emerging Materials, Devices, and Structures
Alain Diebold, College of Nanoscale Science and Engineering, SUNY Albany

2:50 PM

Characterization of Integrated Nano Materials
Amal Chabli, CEA-DRT-LETI

3:20 PM

Coffee Break and Poster Viewing

Session 3:  Electrical Measurements at Nano Dimensions

Session Chair:  Lori Nye, Brewer Science

3:50 PM

Boron Nanowires for Flexible Electronics and Field Emission
H.J. Gao, Chinese Academy of Sciences

4:20 PM

Nanoscale Measurement Methods for Novel Material Characterization
Alex Liddle, NIST

4:50 PM – 5:50 PM

Poster Session

6:00 PM

Banquet

The “Business” of Nanotechnology.  Translating Innovation into Real Technological Breakthroughs
Alain Kaloyeros, Senior VP and CEO, College of Nanoscale Science and Engineering, Univ. at Albany

Tuesday Poster Paper Session

TU-001
Wave Front Sensor for Highly Accurate Characterization of Flatness on Wafer Surfaces
A. Nutsch,¹ I. Lazareva,¹ L. Pfitzner,¹ T. Grandin,² and S. Bucourt^2
1Fraunhofer IISB, Erlangen, Germany
²Imagine Optic, Orsay, France

TU-002
VOC & Metallic Contaminant Control For SOI Process Monitoring
R. Brun,¹ C. Moulin,¹ C. Girard,¹ B. Usry,² and R. Newcomb^2
1Soitec, Crolles, Cedex France
²Qcept Technologies, Atlanta, GA, USA

TU-003
Nanoscale Characterization of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy
O. Ligor, A. Descamps, D. Albertini, L. Militaru, N. Baboux, and B. Gautier
Lyon Institute of Nanotechnology (INL), Villeurbanne, France

TU-004
Reference-Free Characterisation of Semiconductor Surface Contamination and Nanolayers by X-Ray Spectrometry
B. Beckhoff, R. Fliegauf, P. Hönicke, M. Kolbe, M. Müller, B. Pollakowski, F. Reinhardt, J. Weser, and G. Ulm
Physikalisch-Technische Bundesanstalt, Berlin, Germany

TU-005
Polarized Optical Scattering Measurements of Metallic Nanoparticles on a Thin Film Silicon Wafer
C.-Y. Liu, T.-A. Liu, and W.-E. Fu
Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan

TU-006
Fundamental SIMS Metrology Development and Considerations for Molecular Depth Profiling of Photoresist Materials on Silicon
C. Szakal,¹ S. Hues,² J. Bennett,³ and G. Gillen^1
1National Institute of Standards and Technology, Gaithersburg, MD, USA
²Micron Technology, Inc., Biose, ID, USA
³SVTC Technologies, Austin, TX, USA

TU-007
Withdrawn

TU-008
Built-In Self Test Capability for MEMS Microhotplate Temperature Sensors
M. Y. Afridi, C. B. Montgomery, E. Copper-Balis, S. Semancik, K. G. Kreider, and J. Geist
Semiconductor Electronics Division and Process, Measurements Divisions, National Institute of Standards and Technology, Gaithersburg MD, USA

TU-009
Enhanced Spatial Resolution Scanning Kelvin Force Microscopy Using Conductive Carbon Nanotube Tips
J. J. Kopanski,¹ P. McClure,² and Vladimir Mancerski^2
1Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
²Xidex Corporation, Austin, TX, USA

TU-010
Application of Micro-thermal Analysis for Metal, Oxide, and Non-oxide Thin Film Materials
N. Carlie, J. Massera, L. Petit, and K. Richardson
Clemson University School of Materials Science and Engineering / COMSET, Clemson University, Clemson, SC, USA

TU-011
Work Function Measurements in Kelvin Force Microscopy:  Analytical Understandings of Experimental Parameters Effects
K. Kaja, N. Chevalier, D. Mariolle, G. Feuillet, F. Bertin, and A. Chabli
CEA, LETI, MINATEC,  Grenoble, France

TU-012
Contact Resistance Measurements of Metal on HOPG and Graphene Stacks
A. Venugopal,¹ A. Pirkle,² R. M. Wallace,² L. Colombo,³ and E. M. Vogel^1
1Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX, USA
²Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA
³Texas Instruments Inc., Dallas, TX, USA

TU-013
Sub-Surface Nano-Metrology of Buried Patterns and Structures in EUVL and DUV Masks Using Ultrasound
G. Shekhawat,¹ A. Srivastava,² and V. Dravid^1,2
1Institute for Nanotechnology, Northwestern University, Evanston, IL, USA
²Department of Material Science and Engineering, Northwestern University, Evanston, IL, USA

TU-014
Advanced Capacitance Metrology for Nanoelectronic Device Characterization
C. A. Richter,¹ J. J. Kopanski,¹ C. Jiang,¹ Y. Wang,² M. Y. Afridi,¹ X. Zhu,³ D. E. Ioannou,³ and Q. Li^3
1Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
²Quantum Electrical Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
³Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA, USA

TU-015
The Effect of Surface Conditioning on Silicon Wafer Resistivity Monitoring
E. Tsidilkovski and A. Bertuch
Semilab USA, Burlington, MA, USA

TU-016
Variable Temperature Measurements in Cryogenic Probe Stations
J. Lindemuth
Lake Shore Cryotronics, Westerville, OH, USA

TU-017
Inline 90nm Technology Gate Oxide Nitrogen Monitoring with Non Contact Electrical Technique
N. Pic,¹ G. Polisski,² E. Paire,¹ V. Rizzo,¹ C. Grosjean,¹ B. Bortolotti,¹and J. Damico^3
1STMicroelectronics, Rousset Cedex, France
²Applied Materials GmbH, Feldkirchen, Germany
³Semiconductor Diagnostics Inc., Tampa, FL, USA

TU-018
Compact X-Ray Tool For Critical-Dimension Metrology
B. Yokhin,¹ A. Krokhmal,¹ A. Dikopoltsev,¹ D. Berman,¹ I. Mazor,¹ B.-H. Lee,² D.-C. Ihm,² and K. H. Kim^2
1Jordan Valley Semiconductors Ltd., Migdal Haemek, Israel
²Samsung Electronics, Hwasung-City, Gyeonggi-Do, Korea

TU-019
Porous SiOCH Post Plasma Damage Characterization Using Ellipsometric Porosimetry
C. Licitra,¹ R. Bouyssou,² T. Chevolleau,² N. Rochat,¹ and F. Bertin^1
1CEA, LETI, MINATEC, Grenoble, France
²LTM/CNRS (CEA, LETI, MINATEC), Grenoble, France

TU-020
EBSD Analysis of Narrow Damascene Copper Lines
R. H. Geiss,¹ D. T. Read,¹ G. B. Alers,² and R. L. Graham^2
1Materials Reliability Division, National Institute of Standards and Technology, Boulder, CO, USA
²Physics Department, University of California at Santa Cruz, Santa Cruz, CA, USA

TU-021
Characterization of Electrodeposited Copper Films with Time-of-Flight SIMS
H. Demers,¹ E. Lifshin,¹ and A. C. West^2
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²Department of Chemical Engineering, Columbia University, New York, NY, USA

TU-022
Analysis and Metrology with Back Scattered Helium
S. Sijbrandij, J. Notte, and C. Sanford
Carl Zeiss SMT, Peabody, MA, USA

TU-023
Scanning Acoustic Microscopy of 3D-Interconnect
L. Kong,¹ A. Rudack,² S. Arkalgud,² and A. C. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²International SEMATECH, Albany, NY, USA

TU-024
Withdrawn

TU-025
A Critical Comparison of X-Ray Scattering Methods for Porosity Metrology of Low-k Thin Films
C. M. Settens,¹ R. J. Matyi,¹ V. K. Kamineni,¹ A. C. Diebold,¹ G. A. Antonelli,² and A. Grill^3
1College of Nanoscale Science and Engineering, SUNY – University at Albany, Albany, NY, USA
²Novellus Systems, Inc., Tualatin, OR, USA
³IBM T.J. Watson Research Center, Yorktown Heights, NY, USA

TU-026
Spectroscopic Ellipsometry of Porous Low-κ Dielectric Thin Films
V. Kamineni,¹ A. Grill,² A. Antonelli,³ C. Settens,¹ R. Matyi,¹ and A. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²IBM T.J. Watson Research Center, Yorktown Heights, NY, USA
³Novellus, Tualatin, OR, USA

TU-027
Electron Transport Metrology:  Ballistic Electron Emission Microscopy Studies of Hot Electron Scattering in Copper
J. J. Garramone,¹ J. R. Abel,¹ I. L. Sitnitsky,¹ L. Zhao,² I. Appelbaum,² and V. P. LaBella^1
1College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, NY, USA
²Department of Electrical and Computer Engineering, University of Delaware, Neward, DE, USA

TU-028
Controlled Oxidation of Silicon Nanowires
S. Krylyuk, A. Davydov, I. Levin, A. Motayed, and M. D. Vaudin
Material Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA

TU-029
Gate Stack Interfaces in Post-Si Nanoelectronics
T. Feng, H. D. Lee, L. Goncharova, S. Rangan, E. Bersch, O. Celik, C.-L. Hsueh, A. Wan, L. Yu, L. Feldman, T. Gustafsson, R. Bartynski, and E. Garfunkel
Rutgers University, Piscataway, NJ, USA

TU-030
Surface, Sub-surface and Interface Characterization and Analysis of Semiconductor Nanofilms
R. G. Krishnan
A*STAR Institute of Microelectronics, Agency for Science, Technology and Research, Science Park II, Singapore

TU-031
Atomic Force Microscopy Measures Single Electron Charges on Quantum Dots in Ambient Conditions
R. Olac-vaw,¹ N. Guz,² M. Dokukin,2 V. Mitin,¹ and I. Sokolov^2
1Dept. Of Electrical Engineering, University of Buffalo, The State University of New York, Buffalo, NY, USA
²Dept. Of Physics, Clarkson University, Potsdam, NY, USA

TU-032
Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: a Molecular Dynamics Study
J. Hu,¹ X. Ruan,² Z. Jiang,³ and Y. P. Chen^4
1School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
²School of Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
³School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
⁴Department of Physics, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA

TU-033
Raman-Based Graphene Thickness and Defect Metrology
G. Rao, S. McTaggart, J. U. Lee, and R. E. Geer
College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, NY, USA

TU-034
New Methods for Nanoscale Characterization and Functionalization of Templated Ge(Si) Quantum Dot Arrays
J. Thorp,¹ J. F. Graham,¹ and R. Hull^2
1University of Virginia, Dept. of Materials Sci. and Eng., Charlottesville, VA, USA
²Rensselaer Polytechnic Institute, Troy, NY, USA

Wednesday, May 13, 2009

Session 4:  Metrology for CMOS Extension

Session Chair:  Gert Leusink, Tokyo Electron USA

8:00 AM

Evolution of the Ultimate Nano-Transistor
Bruce Doris, IBM

8:30 AM

Nanoscale Strain Metrology of Microelectronic Devices by Dark-Field Electron Holography
Martin Hytch, CNRS, Université de Toulouse

9:00 AM

FINFET Doping: Fabrication and Metrology Challenges
Wilfried Vandervorst, IMEC

9:30 AM

A 3D Stacked Nanowire Technology: Applications in Advanced CMOS and Beyond
Thomas Ernst, CEA-LETI, MINATEC

10:00 AM

Coffee Break and Poster Viewing

Session 5:  Metrology for Beyond CMOS and Extreme CMOS Devices

Session Chair:  Bruce Doris, IBM

10:30 AM

Overview of Carbon-Based Nanoelectronics
Ji Ung Lee, CNSE

11:00 AM

Scanning Single Electron Transistor Microscopy on Graphene
Jens Martin, Weizman Institute, Israel

11:30 AM

Spin Torque Transfer Nonvolatile Devices for CMOS Integrated Circuits
Hideo Ohno, Tohoku University

12:00 PM

Lunch and Poster Viewing

1:20 PM

Scaling Effects on Ferro-Electrics: Application in Nanoelectronics and Characterization
Bertrand Vilquin and Brice Gautier, Nanotechnology Institute of Lyon, France

Session 6:  Interconnects

Session Chair:  Greg Hughes, University at Albany

1:50 PM

Overview of 3D Interconnect Requirements
Sitaram Arkalgud, SEMATECH

2:20 PM

Cross Sectional Characterization of Planar and Non-planar Nanostructures using X-ray Scattering
Wen-li Wu, NIST

2:50 PM

X-ray Microscopy for Interconnect Characterization
Wenbing Yun, Xradia Inc. Concord/CA

3:20 PM

Coffee Break and Poster Viewing

Session 7:  Characterization Methods

Session Chair:  Eric Garfunkel, Rutgers Univ.

3:50 PM

Facts and Artifacts in Atom Probe Tomography
Francois Vurpillot, Univ. Rouen

4:20 PM

Synchrotron-Based Nanocharacterization
Pierre Bleuet, ESRF

4:50 PM

Application of TOF-SIMS and LEIS for the Characterization of Ultra-Thin Films
Thomas Grehl, ION-TOF GmbH

5:20 PM – 6:20 PM

Poster Session

6:30 PM

Barbecue

Wednesday Poster Paper Session

WE-001
Three-Dimensional Compositional & Structrual Characterization of Semiconducting Materials with Sub-NM Resolution
A. Shariq,¹ K. Wedderhoff,¹ and S. Teichert^2
1Fraunhofer Center for Nanoelectronic Technologies, Koenigsbruecker Strasse, Dresden, Germany
²Qimonda Dresden GmBH & Co. OGH, Koenigsbruecker Strasse, Dresden, Germany

WE-002
Effect of Substrate Engineering of AlN/Si(111) Substrates on Overgrown GaN Films
M. Tungare, N. Tripathi, V. Jindal, G. Rao, R. Geer, and F. Shahedipour-Sandvik
College of Nanoscale Science and Engineering, University at Albany - State University of New York, Albany, NY, USA

WE-003
Characterization of Organic Contamination During Semiconductor Manufacturing Processing
A. Nutsch,¹ B. Beckhoff,² G. Bedana,³ G. Borionetti,³ D. Codegoni,⁴ S. Grasso,⁴ G. Guerinoni,³ A. Leibold,¹ M. Muller,² M. Otto,¹ L. Pfitzner,¹ M.-L. Polignano,⁴ D. De Simone,⁴ and L. Frey^1
1Fraunhofer IISB, Erlangen, Germany
²Physikalisch-Technische Bundesanstalt, Berlin, Germany
³MEMC Electronic Materials SpA, Novara, Italy
⁴Numonyx, Milan, Italy

WE-004
GIXRF in the Soft X-Ray Range Used for the Characterization of Ultra Shallow Junctions
B. Beckhoff,¹ P. Hoenicke,¹ D. Giubertoni,² G. Pepponi,² and M. Bersani^1
1Physikalisch-Technische Bundesanstalt, Berlin, Germany
²Fondazione Bruno Kessler, Povo, Trento, Italy

WE-005
Ultra-Thin AlOx and LaOx Metrology – WD-XRF Techniques Development
C. C. Wang, A. Bello, M. Ye, R. Wang, D. Liu, Y. Cao, X. Tang, Y. Uritsky, and S. Gandikota
Defect and Thin Films Characterization Laboratory, Applied Materials, Inc., Santa Clara, CA, USA

WE-006
On the Use of Synchrotron Radiation for the Characterization of “TiN/HfO₂” Gate Stack
C. Gaumera,¹ E. Martinezb,² S. Lhostis,¹ F. Fillot,² P. Gergaud,² B. Detlefs,³ J. Roy,³ Y. Mi,³ J. Zegenhagen,³ and A. Chabli^2
1STMicroelectronics, Crolles, France
²CEA, LETI, MINATEC, Grenoble, France
³European Synchrotron Radiation Facitiliy, Grenoble, France

WE-007
Designing an X-Ray Reflectometry Standard Reference Material: an Inverse Problem for an Inverse Problem
D. L. Gil and D. Windover
Ceramics Division, MSEL, National Institute of Standards and Technology, Gaithersburg, MD, USA

WE-008
Multi-Technique Characterization of Arsenic Ultra Shallow Junctions in Silicon Within the ANNA Consortium
D. Giubertoni,¹ G. Pepponi,¹ B. Beckhoff,² P. Hoenicke,² S. Gennaro,¹ F. Meirer,³ D. Ingerle,³ G. Steinhauser,³ M. Fried,⁴ P. Petrik,⁴ A. Parisini,⁵ M. A. Reading,⁶ C. Streli,³ J. A. van den Berg,⁶ and M. Bersani^1
1Fondazione Bruno Kessler, Povo, Trento, Italy
²Physialisch-Technishe Bundesanstalt, Berlin, Germany
³Atominstitut der Oesterreixhischen Universiteaeten, Wien, Austria
⁴MFA-KFKI, Budapest, Hungary
⁵CNR-IMM, Bologna, Italy
⁶School of Computing, Science and Engineering and Institute of Materials Research – University of Salford, Salford, UK

WE-009
NIST High Resolution X-Ray Diffraction Standard Reference Material:  SRM 2000
D. Windover, D. L. Gil, A. Henins, and J. P. Cline
Ceramics Division, MSEL, National Institute of Standards and Technology, Gaithersburg, MD, USA

WE-010
Characterization of HfO₂, Hafnium Silicate and Nitrided Hafnium Silicate Films on SiO₂/Si
E. Bersch,¹ M. Di,¹ J. LaRose,¹ M. B. Huang,¹ S. Consiglio,² R. D. Clark,² G. J. Leusink,² and A. C. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²TEL Technology Center, Albany, NY, USA

WE-011
Non-Traditional Spectroscopy for Analysis of Semiconductor and Photovoltaic Thin Films Materials
F. Li and S. Anderson
Air Liquide Electronics - Balazs NanoAnalysi, Fremont, CA, USA

WE-012
An Investigation on Airborne Particular & Molecular Condensation Through Liquid Nitrogen Assisted Cooling
R. G. Krishnan¹ and G. Y. Raaj^2
1A*STAR Institute of Microelectronics, Agency for Science, Technology and Research, Science Park II, Singapore
²Raffles Junior College, Singapore

WE-013
Detection of Metal Contamination on Silicon Wafer Backside and Edge by New TXRF Methods
H. Kohno,¹ M. Yamagami,¹ J. Formica,² and L. Shen^2
1Thin-film Analysis Group, Rigaku Corporation, Takatsuki-shi, Osaka, Japan
²Semiconductor Fab Products, Rigaku Americas Corporation, The Woodlands, TX, USA

WE-014
In Situ Real Time Gas Phase Absorption Measurements During Atomic Layer Deposition
J. E. Maslar, W. A. Kimes, J. T. Hodges, B. Sperling, D. R. Burgess, and E. F. Moore
National Institute of Standards and Technology, Gaithersburg, MD 20899

WE-015
Vacuum-Ultraviolet Reflectometry of Ultra-Thin HfO₂ Films
J. Hurst¹ and V. Vartanian^2
1Metrosol Inc., Austin, TX, USA
²ISMI, Albany, NY, USA

WE-016
Stress Measurement In Microstructures by Raman Microscopy
B. Uhlig,¹ J.-H. Zollondz,² M. Goldbach,² H. Bloeß,² and P. Kücher^3
1Fraunhofer -Institut für Keramische Technologien und Systeme, Dresden, Germany
²Qimonda Dresden GmbH & Co. OHG, Dresden, Germany
³Center of Competence CoC Metrology/Analytic, Fraunhofer-Center Nanoelektronische Technologien CNT, Dresden, Germany

WE-017
Application of the SPV-Based Surface Lifetime Technique to In-Line Monitoring of Surface Cu Contamination
J. D’Amico,¹ A. Savtchouk,¹ M. Wilson,¹ C. H. Kim,² H. W. Yoo,² C. H. Lee,² T. K. Kim,² and S. H. Son^2
1Semiconductor Diagnostics, Inc., Tampa, FL, USA
²Hynix Semiconductor, Inc., Kyoungki-do, Korea

WE-018
High-Resolution Rutherford Backscattering Analysis of Nanoscale Thin Films
J. LaRose and M. Huang
SUNY-Albany, Albany, NY, USA

WE-019
Ion Channeling Study of Activated Boron and Disordered Si Atoms in Silicon Ultra-Shallow Junctions
L. Vanamurthy,¹ M. Huang,¹ H. Bakrhu,¹T. Furukawa,² N. Berliner,² J. Herman,² Z. Zhu,² P. Ronsheim,² B. Doris,² M. Li,³ P. Banks,³ and S. Felch^4
1College of Nanoscale Science and engineering, University at Albany-SUNY, Albany NY, USA
²IBM Corporation, Albany, NY, USA
³AMAT, Albany, NY, USA
⁴Spantion Inc., Sunnyvale, CA, USA

WE-020
Evaluation of Experimental Techniques for In-line Ion Implantation Characterization
L. Vignoud,¹ F. Milesi,¹ E. Nolot,¹ A. Danel,¹ and S. Favier^2
1CEA-LETI MINATEC, Grenoble Cedex 9, France
²ST Microelectronics, Crolles Cedex, France

WE-021
High Temperature X-Ray Diffraction for the Determination of Thin Film Phase Diagrams of High-k Dielectrics
L. Wilde,¹ S. Teichert,² P. Reinig,² S. Schmidt,³ W. Weinreich,¹ and P. Kücher^1
1Fraunhofer Center Nanoelectronic Technologies, Dresden, Germany
²Qimonda Dresden GmbH & Co. OHG, Dresden, Germany
³Westachsische Hochschule Zwickau, Zwickau, Germany

WE-022
Advanced Gate and Stack Dielectric Characterization with FastGate® Technology
R. J. Hillard,¹ L. Tan,¹ and K. G. Reid^2
1Solid State Measurements, Inc. Pittsburgh, PA, USA
²Tokyo Electron America, Austin, TX, USA

WE-023
Nanocalorimetry of Thin Film Solidification and Nickel Silicide Formation
D. A. LaVan,¹ F. Yi,¹ R. K. Kummamuru,^1,2 L. De La Rama,² L. Hu,² M. D. Vaudin,¹ and L. H. Allen^2
1Ceramics Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
²Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

WE-024
Towards Routine Backside SIMS Sample Preparation for Efficient Support of Advanced IC Process Development
M. J. P. Hopstaken,¹ C. Cabral Jr.,¹ D. Pfeiffer,¹ C. Molella,² and P. Ronsheim^2
1IBM T.J. Watson Research Center, Yorktown Heights, NY, USA
²IBM East Fishkill, Hopewell Junction, NY, USA

WE-025
X-Ray Photoelectron Spectromicroscopy of Doped Silicon Patterns
N. Barrett,¹ M. Lavayssière,² O. Renault,² L. F. Zagonel,¹ and A. Bailly^2
1CEA DSM/IRAMIS/SPCSI, CEA Saclay, Gif sur Yvette, France
²CEA, LETI, MINATEC, Grenoble, France

WE-026
Spectroscopic Ellipsometry Characterization of High-k Films on SiO₂/Si
M. Di,¹ E. Bersch,¹ S. Consiglio,² R. Clark,² G. Leusink,² A. Srivatsa,³ and A. C. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²TEL Technology Center America, Albany, NY
³KLA-Tencor Corp., Milpitas, CA, USA

WE-027
Withdrawn

WE-029
Photoreflectance Spectroscopic Characterizations of Charge States in High-k Dielectric Layers
T. Zhang,¹ M. Di,¹ E. J. Bersch,¹ H. Chouaib,² A. Salnik,² L. Nicolaides,² S. Consiglio,³ R. D. Clark,³ and A. C. Diebold^1
1College of Nanoscale Science and Engineering, State University of New York, Albany, NY, USA
²KLA-Tencor Corp., San Jose, CA, USA
³TEL Technology Center America, Albany, NY, USA

WE-030
Quantification of Hafnium in Hafnium Oxide Film for Reference Materials
T. Takatsuka,¹ I. Kojima,¹ Y. Kobayashi,¹ K. Hirata,¹ N. Nonose,¹ T.i Ohchi,² C. Ichihara,³ H. Matsue,⁴ M. Morita,⁵ H. Takahara,⁶ and T. Asano^7
1National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
²NTT-AT-Nanofabrication Co.
³Kobe Steel, Ltd.
⁴Quantum Beam Science Directorate, Japan Atomic Energy Agency
⁵Graduate School of Engineering, Osaka University
⁶Technos CO., Ltd.
⁷Ibaraki Prefectural Industrial Technology Center

WE-031
Process Tool Contamination - From Starting Material to On-Wafer
V. K. F. Chia
Balazs NanoAnalysis, Fremont, CA, USA

WE-032
Thickness Measurement of Thin Metal Films by Optical Metrology
V. Kamineni,¹ M. Raymond,² E. Bersch,¹ B. Doris,³ and A. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²AMD, Albany, NY, USA
³IBM, Albany, NY, USA

WE-033
Post-Deposition Annealing Analysis for HfO₂ Thin Films Using GIXRR/GIXRD
W.-E. Fu, E. Chang, and Y.-C. Chen
Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan

Thursday, May 14, 2009

Session 8:  Microscopy for Nanoelectronics

Session Chair:  Robert Hull, RPI

8:00 AM

Progress Towards Low Vacuum Critical Dimension Metrology
Brad Thiel, University at Albany - SUNY

8:30 AM

Nanotechnology: An Overview and Impact on Metrology
Meyya Meyyapan, Director, Center for Nanotechnology, NASA

9:00 AM

Aberration-corrected TEM for Nanoelectronics Applications
Christian Kisielowski, NCEM/LBNL

9:30 AM

Coffee Break and Poster Viewing

10:00 AM

Corrected Electron Optics - Improved Resolution and New Analysis Capabilities
Michael Steigerwald, Carl Zeiss Oberkochen, Germany

10:30 AM

Energy Filtered PhotoElectron Microscopy
Konrad Winkler, Omicron NanoTechnology GmbH

11:00 AM

Understanding the Imaging and Metrology Using the Helium Ion Microscopy
Michael Postek, NIST

11:30 AM

Lunch and Poster Viewing

Session 9:  Theory, Modeling, and Simulation

Session Chair:  David Kyser, AMAT

12:50 PM

Simulations of Scatterometry Down to 22 nm Structure Sizes and Beyond
Wolfgang Osten, University Stuttgart

1:20 PM

Challenges and Opportunities for Modeling and Simulation
Mark Lundstrom, Purdue

1:50 PM

Coffee Break and Poster Viewing

Session 10:  Metrology for Patterning

Session Chair:  Sitaram Arkalgud, SEMATECH

2:20 PM

Pushing Resists to Their Limits: Creating New Targets for Metrology
Chris Ober, Cornell

2:50 PM

Metrology for Advanced Patterning and Overlay
Bart Rijpers, ASML

3:20 PM

Mask Metrology – Current and Future Challenges
Greg Hughes, SEMATECH

3:50 PM – 4:50 PM

Poster Viewing (with wine and cheese)

Thursday Poster Paper Session

TH-001
Thermal Diffusivity and Boundary Resistance Analyses in Resistance Random Access Memory (ReRAM)
H. Akinaga and H. Shima
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan

TH-002
Lithography with Helium Ions
D. Winston,¹ B. M. Cord,¹ B. Ming,² D. C. Bell,³ W. F. DiNatale,⁴ L. A. Stern,⁴ A. E. Vladar,² M. T. Postek,² M. K. Mondol,¹ and K. K. Berggren^1
1Massachusetts Institute of Technology, Cambridge, MA, USA
²National Institute of Standards and Technology, Gaithersburg, MD, USA
³Harvard University, Cambridge, MA, USA
⁴Carl Zeiss SMT Inc., Peabody, MA, USA

TH-003
Withdrawn

TH-004
Predicting Overlay Distortions on a Litho-Scanner
K. T. Turner¹ and J. Sinha^2
1Department of Mechanical Engineering, University of Wisconsin, Madison, WI, USA
²Wafer Inspection Group, KLA Tencor, Milpitas, CA, USA

TH-005
A Comparison of Linewidth Measurements on Sub-20 nm Graphene Nanostructures
J. J. Peterson,¹ M. A. Rodriguez,² V. Tileli,² M. Sprinkle,³ C. Berger,³ B. L. Thiel,² and W. A. de Heer^3
1Intel Corporation Assignee to INDEX, Albany, NY, USA
²University at Albany-SUNY, Albany, NY, USA
³School of Physics, Georgia Institute of Technology, Atlanta, GA, USA

TH-006
Integrated ODP Metrology Matching to Reference Metrology for Lithography Process Control
P. Kearney,¹ J. Uchida,¹ S. Egret,¹ H. Weichert,¹ D. Likhavchev,² and G. Fleischer^3
1Tokyo Electron Europ Limited, German Branch, Dresden, Germany
²Timbre Technologies, Inc., Santa Clara, CA, USA
³Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

TH-007
A High Resolution X-Ray Reflectometry Study of Extreme Ultraviolet Photoresists
R. J. Matyi and R. L. Brainard
College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA

TH-008
Re-Calibration of the SRM 20⁵9 Master Standard Using Traceable Atomic Force Microscope Dimensional Metrology
R. Dixson, J. Potzick, and N. Orji
Precision Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-009
Measurements of Sub-30 nm Structures Over Large Areas Using Grazing Incidence Small Angle X-Ray Scattering
R. L. Jones,¹ K. Yager,¹ C. Wang,¹ K.-W. Choi,² E. K. Lin,¹ and W.-l. Wu^1
1Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
²Intel Corporation, Santa Clara, CA, USA

TH-010
A Novel Wafer-Plane Dosimeter for EUV Lithography
S. Grantham and C. Tarrio
National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-011
Cross Sectional Characterization of Sub-50 nm Structures Using CD-SAXS
C. Wang,¹ R. L. Jones,¹ K.-W. Choi,² D. Ho,¹ E. K. Lin,¹ W.-l. Wu,¹ J. S. Clarke,³ J. S. Villarrubia,⁴ and B. Bunday^5
1Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
²Intel Corporation, Santa Clara, CA, USA
³Intel Corporation, Hillsboro, OR, USA
⁴Precision Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
⁵International SEMATECH Manufacturing Initiative (ISMI), Austin, TX, USA

TH-012
Interference Microscopy for Semiconductor Backend Patterning Metrology
X. Colonna de Lega,¹ P. de Groot,¹ M. Fay,¹ R. Kruse,¹ D. Grigg,¹ and J. Barnak^2
1Zygo Corporation, Middlefield, CT, USA
²Zygo Corporation, Hillsboro, OR, USA

TH-013
Spectroscopic Scatterfield Microscopy
B. M. Barnes,¹ H. Zhou,¹ N. A. Heckert,² and R. M. Silver^2
1KT Consulting, Inc., Antioch, CA, USA
²National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-014
Understanding the Phase Images from FIB Prepared Semiconductor Devices
D. Cooper, J.-M. Hartmann, P. Rivallin, and A. Chabli
CEA, Leti, Minatec, Grenoble, France

TH-015
Simulation Study of Transmission Electron Microscopy Imaging of Graphene Stacking
F. Nelson,¹ R. Hull,² and A. C. Diebold^1
1College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA
²Rensselaer Polytechnic Institute (RPI), Troy, NY, USA

TH-016
Scanning Tunneling Spectroscopies of Graphene
G. M. Rutter,¹ D. L. Miller,² K. D. Kubista,² M. Ruan,² W. A. de Heer,² P. N. First,² and J. A. Stroscio^1
1Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, USA
²School of Physics, Georgia Institute of Technology, Atlanta, GA, USA

TH-017
Enhanced TEM Sample Preparation Using In-situ Low Energy Argon Ion Milling
H. Stegmann,¹ Y. Ritz,² D. Utess,² and E. Zschech^2
1Carl Zeiss NTS GmbH, Oberkochen, Germany
²AMD Fab 36 LLC & Co. KG, Dresden, Germany

TH-018
TEM Spectral Imaging and Tomography for Chemical Imaging of Three-Dimensional Nanoelectronic Devices
I. M. Anderson and A. A. Herzing
Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-019
Hysteresis Correction of SPM Image by Moving Window Correlation Method
J. Fu, W. Chu, R. Dixson, G. Orji, and T. Vorburger
National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-020
Electrical Measurements by Scanning Spreading Resistance Microscopy: Application to Carbon Nanofibers and Si Nanowires
N. Chevalier,¹ D. Mariolle,¹ L. Fourdrinier,² C. Celle,² C. Mouchet,² S. Poncet,² J. P. Simonato,² H. Le Poche,² E. Rouviere,² F. Bertin,¹ and A. Chabli^1
1CEA, LETI, MINATEC, Grenoble, France
²CEA-LITEN/Hybrid Components Laboratory, Grenoble, France

TH-021
A Study of Gate-All-Around Transistors by Electron Tomography
P. D. Cherns,¹ F. Lorut,² C. Dupré,¹ K.Tachi,¹ D.Cooper,¹ A.Chabli,¹ and T. Ernst^1
1CEA, LETI, MINATEC, Grenoble, France
²ST Microelectronics, Crolles, France

TH-022
Quantifying and Enforcing the Two-Dimensional Symmetry of Scanning Probe Microscopy Images of Periodic Objects
P. Moeck,¹ B. Moon Jr.,¹ E. Sánches,¹ M. Abdel-Hafiez,² and M. Hietschold^2
1Department of Physics, Nano-Crystallography Group, Portland State University, Portland, OR, USA
²Institute of Physics, Solid Surfaces Analysis Group & Electron Microscopy Laboratory, Chemnitz University of Technology, Germany

TH-023
Structural Fingerprinting of Nanocrystals in the Transmission Electron Microscope
P. Moeck,¹ S. Rouvimov,¹ and S. Nicolopoulos^2
1Nano-Crystallography Group, Department of Physics, Portland State University, Portland, OR, USA
²NanoMEGAS SPRL, Brussels, Belgium

TH-024
Automated Crystal Orientation and Phase Mapping of Iron Oxide Nano-Crystals in a Transmission Electron Microscope
S. Rouvimov,¹ E. F. Rauch,² P. Moeck,¹ and S. Nicolopoulos^3
1Nano-Crystallography Group, Department of Physics, Portland State University, Portland, OR, USA
²SIMAP/GPM2 Laboratory, CNRS-Grenoble, France
³NanoMEGAS SPRL, Brussels, Belgium

TH-025
Helium Ion Beam Microscopy for Copper Grain Identification in BEOL Structures
R. J. J. van den Boom,¹ H. Parvaneh,¹ D. Voci,² D. Ferranti,² C. Huynh,² K. A. Dunn,¹ and E. Lifshin^1
1State University of New York, University at Albany, Albany NY, USA
²Carl Zeiss SMT Inc., Peabody, MA, USA

TH-026
Edge Structure of Suspended Graphene Confirmed by HRTEM
S. Y. Park, Y. J. Suh, and M. J. Kim
Department of Material Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA

TH-027
Withdrawn

TH-028
Spectroscopic Polarimetry of Light Scattered by Surface Roughness and Textured Films in Nanotechnologies
F. Ferrieu
STMicroelectronics, Crolles Cedex, France

TH-029
Density Functional Theory Studies of Defects in Graphene
E. Cockayne
Ceramics Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA

TH-030
Application of Statistical Dynamical X-Ray Diffraction Theory to Defective Semiconductor Heterostructures
P. K. Shreeman and R. J. Matyi
College of Nanoscale Science and Engineering, SUNY – University at Albany, Albany, NY, USA

TH-031
Withdrawn

TH-032
A Lumped Element Model for Near-Field Microwave Microscopy of Bulk and Thin Film Semiconductors
V. V. Talanov
Solid State Measurements, Inc., Pittsburgh, PA, USA